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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    AUIRFL024NTR AUIRFL024NTR Infineon Technologies $0.00
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    		 download 9 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant No 4 AVALANCHE RATED, HIGH RELIABILITY TO-261-4, TO-261AA No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W 8.1 ns 1W Ta 2.8A SWITCHING 0.075Ohm 22.2 ns SILICON N-Channel 75m Ω @ 2.8A, 10V 4V @ 250μA 400pF @ 25V 18.3nC @ 10V 13.4ns 17.7 ns 20V 55V 0.0028A 2.8A Ta 10V ±20V
    IRFR7540PBF IRFR7540PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2013 StrongIRFET™ Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED 1 Single 140W 8.7 ns 140W Tc 90A 59 ns N-Channel 4.8m Ω @ 66A, 10V 3.7V @ 100μA 4360pF @ 25V 130nC @ 10V 38ns 32 ns 20V 90A Tc 60V 6V 10V ±20V
    IRFH4226TRPBF IRFH4226TRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2014 FASTIRFET™, HEXFET® Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFH4226 1 3.4W 11 ns 3.4W Ta 46W Tc 30A 14 ns N-Channel 2.4m Ω @ 30A, 10V 2.1V @ 50μA 2000pF @ 13V 32nC @ 10V 35ns 8.1 ns 20V 30A Ta 70A Tc 25V 4.5V 10V ±20V
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    		 download Surface Mount Cut Tape (CT) 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 75A SWITCHING 0.008Ohm 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 75A Tc
    IRFS7730-7PPBF IRFS7730-7PPBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2013 StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 5.084mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 375W 20 ns 2.1V 375W Tc 240A 175°C 182 ns N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13970pF @ 25V 428nC @ 10V 90ns 91 ns 20V 75V 240A Tc 6V 10V ±20V
    IRFS7762PBF IRFS7762PBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 140W 11 ns 140W Tc 85A 57 ns N-Channel 6.7m Ω @ 51A, 10V 3.7V @ 100μA 4440pF @ 25V 130nC @ 10V 49ns 40 ns 20V 85A Tc 75V 6V 10V ±20V
    AUIRFS3206TRL AUIRFS3206TRL Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2015 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.003Ohm 60V SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 120A 120A Tc 60V 840A 170 mJ 10V ±20V
    AUIRFZ46NL AUIRFZ46NL Infineon Technologies $0.00
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    		 download 9 Weeks Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) EAR99 10.67mm RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 3.8W 14 ns 3.8W Ta 107W Tc 39A 52 ns N-Channel 16.5m Ω @ 28A, 10V 4V @ 250μA 1696pF @ 25V 72nC @ 10V 76ns 57 ns 20V 55V 39A Tc 10V ±20V
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    		 download Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 15 ns 230W Tc 120A SWITCHING 0.0058Ohm 38 ns SILICON N-Channel 5.8m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 64ns 65 ns 20V 75V 120A Tc 480A 10V ±20V
    AUIRFZ34N AUIRFZ34N Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.75mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.13mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 68W 7 ns 2V 68W Tc 29A SWITCHING 0.04Ohm 31 ns SILICON N-Channel 40m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 29A Tc 65 mJ 10V ±20V
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    		 download 13 Weeks Surface Mount Tube 2000 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 120W 7.4 ns 120W Tc 30A 83 ns N-Channel 14m Ω @ 30A, 10V 3V @ 250μA 1870pF @ 25V 92nC @ 10V 51ns 100 ns 16V 55V 30A Tc 5V 10V ±16V
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    		 download Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 14 ns 200W Tc 135A SWITCHING 0.0047Ohm 68 ns SILICON N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 2 V 75A 135A Tc 700A 10V ±20V
    AUIRF4905L AUIRF4905L Infineon Technologies $0.00
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    		 download 9 Weeks Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant No 3 TO-262 9.65mm 4.83mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors 1 DRAIN Single 25W 20 ns 200W Tc 42A SWITCHING 0.02Ohm 51 ns SILICON P-Channel 20m Ω @ 42A, 10V 4V @ 250μA 3500pF @ 25V 180nC @ 10V 20V -55V 42A Tc 55V 280A 10V ±20V
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    		 download 8 Weeks Through Hole Tube 2007 Automotive, AEC-Q101 Obsolete 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 250 30 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 140W 15 ns -2V 140W Tc -23A SWITCHING 51 ns SILICON P-Channel 117m Ω @ 11A, 10V 4V @ 250μA 1300pF @ 25V 97nC @ 10V 67ns 51 ns 20V -100V 23A Tc 100V 76A 10V ±20V
    AUIRFP2602 AUIRFP2602 Infineon Technologies $0.00
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    		 download 11 Weeks Through Hole Tube 2011 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 15.87mm RoHS Compliant No 3 TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 380W 70 ns 380W Tc 180A SWITCHING 24V 150 ns SILICON N-Channel 1.6m Ω @ 180A, 10V 4V @ 250μA 11220pF @ 25V 390nC @ 10V 490ns 270 ns 20V 180A Tc 24V 400 mJ 10V ±20V
    AUIRFP064N AUIRFP064N Infineon Technologies $0.00
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    		 download 9 Weeks Through Hole Tube 2011 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 20.7mm 5.31mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 200W 14 ns 2V 200W Tc 110A SWITCHING 0.008Ohm 43 ns SILICON N-Channel 8m Ω @ 59A, 10V 4V @ 250μA 4000pF @ 25V 170nC @ 10V 100ns 70 ns 20V 55V 110A Tc 480 mJ 10V ±20V
    AUIRFR1018E AUIRFR1018E Infineon Technologies $0.00
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    		 download Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 AUIRFR1018E R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 13 ns 2V 110W Tc 56A SWITCHING 0.0084Ohm 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A 56A Tc 88 mJ 10V ±20V
    IRFSL4510PBF IRFSL4510PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Through Hole 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 DRAIN Single 140W 13 ns 3V 140W Tc 61A SWITCHING 28 ns SILICON N-Channel 13.9m Ω @ 37A, 10V 4V @ 100μA 3180pF @ 50V 87nC @ 10V 32ns 28 ns 20V 100V 3 V 61A Tc 250A 10V ±20V
    AUIRFR2405 AUIRFR2405 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tube 2011 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 15 ns 110W Tc 30A SWITCHING 55 ns SILICON N-Channel 16m Ω @ 34A, 10V 4V @ 250μA 2430pF @ 25V 110nC @ 10V 130ns 78 ns 20V 55V 56A 30A Tc 220A 10V ±20V
    AUIRFS4010 AUIRFS4010 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 21 ns 375W Tc 180A SWITCHING 0.0047Ohm 100 ns SILICON N-Channel 4.7m Ω @ 106A, 10V 4V @ 250μA 9575pF @ 50V 215nC @ 10V 86ns 77 ns 20V 100V 180A Tc 720A 10V ±20V
    AUIRFZ44NS AUIRFZ44NS Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.8W 12 ns 2V 3.8W Ta 94W Tc 49A SWITCHING 44 ns SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 60ns 45 ns 20V 55V 49A Tc 10V ±20V
    AUIRFR3607 AUIRFR3607 Infineon Technologies $0.00
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    		 download Surface Mount Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 AUIRFR3607 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 16 ns 2V 140W Tc 56A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 80A 56A Tc 10V ±20V
    AUIRLR3105 AUIRLR3105 Infineon Technologies $0.00
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    		 download Surface Mount Tube 2011 HEXFET® Obsolete 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 57W 8 ns 1V 57W Tc 25A 25 ns N-Channel 37m Ω @ 15A, 10V 3V @ 250μA 710pF @ 25V 20nC @ 5V 57ns 37 ns 16V 55V 25A Tc 5V 10V ±16V
    AUIRLR120N AUIRLR120N Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tube 2011 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 4 ns 1V 48W Tc 10A SWITCHING 0.225Ohm 23 ns SILICON N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 35ns 22 ns 16V 100V 1 V 10A Tc 85 mJ 4V 10V ±16V
    AUIRF7207QTR AUIRF7207QTR Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant No 8 AVALANCHE RATED, HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING Other Transistors 1 SINGLE WITH BUILT-IN DIODE 2.5W 11 ns -700mV 2.5W Ta 5.4A SWITCHING 0.06Ohm 43 ns SILICON P-Channel 60m Ω @ 5.4A, 4.5V 1.6V @ 250μA 780pF @ 15V 22nC @ 4.5V 24ns 41 ns 12V -20V 5.4A Ta 20V 43A 2.7V 4.5V ±12V
    BSD816SNH6327XTSA1 BSD816SNH6327XTSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Obsolete 1 (Unlimited) EAR99 2mm ROHS3 Compliant Tin 6 6-VSSOP, SC-88, SOT-363 800μm 1.25mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 NOT SPECIFIED NOT SPECIFIED Single 5.3 ns 20V 500mW Ta 1.4A 11 ns N-Channel 160m Ω @ 1.4A, 2.5V 0.95V @ 3.7μA 180pF @ 10V 0.6nC @ 2.5V 9ns 8V 1.4A Ta 1.8V 2.5V ±8V
    BUZ31H3046XKSA1 BUZ31H3046XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 10.36mm RoHS Compliant Lead Free Tin 3 AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.52mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power 1 Halogen Free Single 95W 12 ns 200V 95W Tc 14.5A 0.2Ohm 150 ns SILICON N-Channel 200m Ω @ 9A, 5V 4V @ 1mA 1120pF @ 25V 50ns 20V 200V 14.5A Tc 58A 200 mJ 5V ±20V
    IPP80P04P4L06AKSA1 IPP80P04P4L06AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2011 Automotive, AEC-Q101, OptiMOS™ Obsolete 1 (Unlimited) 175°C -55°C 10mm RoHS Compliant Contains Lead 3 TO-220-3 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free Single 17 ns -40V 10.8mOhm PG-TO220-3-1 88W Tc 80A 61 ns P-Channel 6.7mOhm @ 80A, 10V 2.2V @ 150μA 6580pF @ 25V 104nC @ 10V 12ns 44 ns 16V 80A Tc 40V 5.06nF 4.5V 10V +5V, -16V 6.7 mΩ
    AUIRFN7107TR AUIRFN7107TR Infineon Technologies $0.00
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    		 download 11 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 RoHS Compliant 8 ULTRA LOW RESISTANCE 8-PowerTDFN 8.5mOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 1 DRAIN Single 8 ns 4.4W Ta 125W Tc 14A SWITCHING 75V 19 ns SILICON N-Channel 8.5m Ω @ 45A, 10V 4V @ 100μA 3001pF @ 25V 77nC @ 10V 12ns 7 ns 20V 14A Ta 75A Tc 75V 300A 10V ±20V
    SPP07N65C3XKSA1 SPP07N65C3XKSA1 Infineon Technologies $0.00
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    		 download Through Hole 2008 Obsolete 1 (Unlimited) 150°C -55°C 10.36mm RoHS Compliant Lead Free 7.3A 3 TO-220 15.95mm 4.57mm 650V 83W 1 Halogen Free Single 83W 6 ns 650V 600mOhm 7.3A 60 ns 3.5ns 7 ns 20V 650V 650V 790pF 600 mΩ