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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRF630NSTRRPBF IRF630NSTRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 82W 7.9 ns 82W Tc 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 9.3A Tc 94 mJ 10V ±20V
    IPD20N03L IPD20N03L Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) 2 SMD/SMT EAR99 Non-RoHS Compliant Contains Lead 30A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC unknown Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 255 NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 60W 1.6V 60W Tc 30A SWITCHING SILICON N-Channel 20m Ω @ 15A, 10V 2V @ 25μA 700pF @ 25V 11nC @ 5V 20V 30V 1.6 V 30A Tc 4.5V 10V ±20V
    IRF3717PBF IRF3717PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 20A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 4.4MOhm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 2.5W 12 ns 2V 2.5W Ta 32 ns 20A SWITCHING 15 ns SILICON N-Channel 4.4m Ω @ 20A, 10V 2.45V @ 250μA 2890pF @ 10V 33nC @ 4.5V 14ns 6 ns 20V 20V 2 V 20A Ta 32 mJ 4.5V 10V ±20V
    IPI80N06S3L-05 IPI80N06S3L-05 Infineon Technologies $0.00
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    		 download Through Hole Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 80A LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN 260 40 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 Single 165W 165W Tc 80A SWITCHING 0.008Ohm 65 ns SILICON N-Channel 4.8m Ω @ 69A, 10V 2.2V @ 115μA 13060pF @ 25V 273nC @ 10V 49ns 41 ns 16V 55V 80A Tc 320A 345 mJ 5V 10V ±16V
    IRF530NSTRRPBF IRF530NSTRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 70W Tc SWITCHING 0.09Ohm 100V SILICON N-Channel 90m Ω @ 9A, 10V 4V @ 250μA 920pF @ 25V 37nC @ 10V 17A 17A Tc 100V 60A 93 mJ 10V ±20V
    SPU07N60S5 SPU07N60S5 Infineon Technologies $0.00
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    		 download 10 Weeks Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free Tin 7.3A 3 AVALANCHE RATED, HIGH VOLTAGE TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 Single 83W 120 ns 83W Tc 7.3A SWITCHING 0.6Ohm 170 ns SILICON N-Channel 600m Ω @ 4.6A, 10V 5.5V @ 350μA 970pF @ 25V 35nC @ 10V 40ns 20 ns 20V 600V 7.3A Tc 14.6A 10V ±20V
    BSP170PL6327HTSA1 BSP170PL6327HTSA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2007 SIPMOS® yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant No 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 14 ns 1.8W Ta 1.9A SWITCHING 0.3Ohm 60V 92 ns SILICON P-Channel 300m Ω @ 1.9A, 10V 4V @ 250μA 410pF @ 25V 14nC @ 10V 60 ns 20V 1.9A Ta 60V 7.6A 70 mJ 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2002 SIPMOS® yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant No 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.79W 5.2 ns 1.79W Ta 1.1A 0.7Ohm 37.4 ns SILICON N-Channel 700m Ω @ 1.1A, 10V 1.8V @ 400μA 364pF @ 25V 17.2nC @ 10V 7.9ns 21.4 ns 20V 1.1A Ta 100V 4.5V 10V ±20V
    SPP80N06S08AKSA1 SPP80N06S08AKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 SIPMOS® no Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 0.008Ohm 55V SILICON N-Channel 8m Ω @ 80A, 10V 4V @ 250μA 3660pF @ 25V 187nC @ 10V 80A 80A Tc 55V 320A 700 mJ 10V ±20V
    IPD800N06NGBTMA1 IPD800N06NGBTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant No AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 47W 7 ns 47W Tc 16A SWITCHING 0.08Ohm 60V 22 ns SILICON N-Channel 80m Ω @ 16A, 10V 4V @ 16μA 370pF @ 30V 10nC @ 10V 38ns 27 ns 20V 16A Tc 60V 64A 43 mJ 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Obsolete 1 (Unlimited) 2 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 Single 15 ns 60V 71W Tc 45A 20 ns SILICON N-Channel 9.4m Ω @ 45A, 10V 4V @ 34μA 3785pF @ 25V 47nC @ 10V 40ns 5 ns 20V 45A Tc 97 mJ 10V ±20V
    SPB12N50C3ATMA1 SPB12N50C3ATMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free 11.6A No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount -55°C~150°C TJ 560V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING 4 YES R-PSSO-G2 1 Halogen Free Single 125W 10 ns 125W Tc 11.6A 45 ns SILICON N-Channel 380m Ω @ 7A, 10V 3.9V @ 500μA 1200pF @ 25V 49nC @ 10V 8ns 8 ns 20V 500V 3 V 11.6A Tc 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 91W Tc SWITCHING 0.011Ohm 55V SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 50μA 1720pF @ 25V 60nC @ 10V 42A 42A Tc 55V 250A 110 mJ 10V ±20V
    IRFH4210DTRPBF IRFH4210DTRPBF Infineon Technologies $0.00
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    		 download Surface Mount Digi-Reel® 2013 HEXFET® Discontinued 1 (Unlimited) EAR99 6mm ROHS3 Compliant Lead Free No 5 8-PowerTDFN No SVHC 900μm 5mm 1.1MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 3.5W 19 ns 1.6V 3.5W Ta 125W Tc 44A 24 ns N-Channel 1.1m Ω @ 50A, 10V 2.1V @ 100μA 4812pF @ 13V 77nC @ 10V 45ns 16 ns 20V 44A Ta 25V 4.5V 10V ±20V
    IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2009 OptiMOS™ yes Active 1 (Unlimited) 3 10mm ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant 9.25mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 DRAIN Halogen Free Single 79W 10 ns 60V 79W Tc 80A 0.0064Ohm 50 ns SILICON N-Channel 6.7m Ω @ 80A, 10V 2.2V @ 40μA 5680pF @ 25V 72nC @ 10V 16V 80A Tc 4.5V 10V ±16V
    IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 62.5W 9 ns 650V 62.5W Tc 6A SWITCHING 0.66Ohm 40 ns SILICON N-Channel 660m Ω @ 3.2A, 10V 4.5V @ 200μA 543pF @ 100V 20nC @ 10V 8ns 10 ns 20V 6A 6A Tc 10V ±20V
    IPI70N10S312AKSA1 IPI70N10S312AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 17 ns 100V 125W Tc 70A 0.0116Ohm 25 ns SILICON N-Channel 11.6m Ω @ 70A, 10V 4V @ 83μA 4355pF @ 25V 66nC @ 10V 8ns 20V 70A Tc 280A 410 mJ 10V ±20V
    IPP027N08N5AKSA1 IPP027N08N5AKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 22 ns 80V 214W Tc 120A SWITCHING 0.0027Ohm 46 ns SILICON N-Channel 2.7m Ω @ 100A, 10V 3.8V @ 154μA 8970pF @ 40V 123nC @ 10V 14ns 15 ns 20V 80V 120A Tc 480A 374 mJ 6V 10V ±20V
    IPI120N04S302AKSA1 IPI120N04S302AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 40V 300W Tc 120A SILICON N-Channel 2.3m Ω @ 80A, 10V 4V @ 230μA 14300pF @ 25V 210nC @ 10V 120A Tc 480A 1880 mJ 10V ±20V
    AUIRFS4310TRL AUIRFS4310TRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 300W 26 ns 300W Tc 75A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 110ns 78 ns 20V 100V 75A Tc 550A 980 mJ 10V ±20V
    IPA65R125C7XKSA1 IPA65R125C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 14 ns 650V 32W Tc 10A SWITCHING 0.125Ohm 71 ns SILICON N-Channel 125m Ω @ 8.9A, 10V 4V @ 440μA 1670pF @ 400V 35nC @ 10V 15ns 8 ns 20V 10A Tc 75A 89 mJ 10V ±20V
    IPI100N12S305AKSA1 IPI100N12S305AKSA1 Infineon Technologies $0.00
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    		 download 39 Weeks 2016 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-262AA N-CHANNEL 0.0051Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 100A 400A 1445 mJ
    AUIRFS4115 AUIRFS4115 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2015 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS4115 375W Tc 99A N-Channel 12.1m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 99A Tc 150V 10V ±20V
    AUIRF1404STRL AUIRF1404STRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.004Ohm 40V SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 75A 75A Tc 40V 650A 519 mJ 10V ±20V
    IRFB3207ZGPBF IRFB3207ZGPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.826mm 4.1MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 20 ns 4V 300W Tc 210A SWITCHING 55 ns SILICON N-Channel 4.1m Ω @ 75A, 10V 4V @ 150μA 6920pF @ 50V 170nC @ 10V 68ns 68 ns 20V 75V 120A Tc 670A 10V ±20V
    IPI60R280C6XKSA1 IPI60R280C6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 104W 13 ns 600V 104W Tc 13.8A SWITCHING 0.28Ohm 100 ns SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 11ns 12 ns 20V 13.8A Tc 40A 284 mJ 10V ±20V
    IPP80N06S2L09AKSA2 IPP80N06S2L09AKSA2 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB 10 ns 55V 190W Tc 80A 53 ns SILICON N-Channel 8.5m Ω @ 52A, 10V 2V @ 125μA 2620pF @ 25V 105nC @ 10V 19ns 18 ns 20V 80A Tc 4.5V 10V ±20V
    IRFSL7534PBF IRFSL7534PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Surface Mount 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 DRAIN Single 20 ns 3.7V 294W Tc 195A SWITCHING 0.0024Ohm 60V 118 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 3.7V @ 250μA 10034pF @ 25V 279nC @ 10V 134ns 93 ns 20V 195A Tc 60V 944A 775 mJ 6V 10V ±20V
    IRF6612TRPBF IRF6612TRPBF Infineon Technologies $0.00
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    		 Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.35mm RoHS Compliant Lead Free 24A 5 DirectFET™ Isometric MX No SVHC 506μm 5.05mm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER BOTTOM NO LEAD 260 30 R-XBCC-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 15 ns 2.8W Ta 89W Tc 136mA SWITCHING 0.0033Ohm 21 ns SILICON N-Channel 3.3m Ω @ 24A, 10V 2.25V @ 250μA 3970pF @ 15V 45nC @ 4.5V 52ns 4.8 ns 20V 30V 1.8 V 24A Ta 136A Tc 190A 37 mJ 4.5V 10V ±20V
    BSP603S2LHUMA1 BSP603S2LHUMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 4 EAR99 6.5mm Non-RoHS Compliant Contains Lead Tin 5.2A No 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 4 1 DRAIN Not Halogen Free Single 1.8W 10.8 ns 55V 1.8W Ta 5.2A 28 ns SILICON N-Channel 33m Ω @ 2.6A, 10V 2V @ 50μA 1390pF @ 25V 42nC @ 10V 16ns 16 ns 20V 55V 5.2A Ta 4.5V 10V ±20V