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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IPP05CN10NGXKSA1 IPP05CN10NGXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 100A 3 TO-220-3 Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 28 ns 100V 300W Tc 100A SWITCHING 0.0054Ohm 64 ns SILICON N-Channel 5.4m Ω @ 100A, 10V 4V @ 250μA 12000pF @ 50V 181nC @ 10V 42ns 21 ns 20V 100A Tc 400A 826 mJ 10V ±20V
    AUIRF3805L AUIRF3805L Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 11.3mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 DRAIN Single 300W 150 ns 300W Tc 160A SWITCHING 93 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 87 ns 20V 55V 160A Tc 890A 940 mJ 10V ±20V
    IPA60R199CPXKSA1 IPA60R199CPXKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 10 ns 600V 34W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 1.1mA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 650V 10V ±20V
    IPB180N04S302ATMA1 IPB180N04S302ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 40V 300W Tc 180A SILICON N-Channel 1.5m Ω @ 80A, 10V 4V @ 230μA 14300pF @ 25V 210nC @ 10V 20V 180A Tc 720A 10V ±20V
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 34.5W Tc SWITCHING 0.19Ohm 500V SILICON N-Channel 190m Ω @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 95nC @ 10V 21A 21A Tc 560V 63A 690 mJ 10V ±20V
    IPP45N06S4L08AKSA2 IPP45N06S4L08AKSA2 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2009 Automotive, AEC-Q101, OptiMOS™ yes Obsolete 1 (Unlimited) 3 10mm ROHS3 Compliant 3 TO-220-3 not_compliant 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 TO-220AB DRAIN Halogen Free Single 9 ns 60V 71W Tc 45A 0.0079Ohm 45 ns SILICON N-Channel 8.2m Ω @ 45A, 10V 2.2V @ 35μA 4780pF @ 25V 64nC @ 10V 2ns 8 ns 16V 45A Tc 180A 97 mJ 4.5V 10V ±16V
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    		 download 16 Weeks Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 71W Tc SWITCHING 0.0158Ohm 60V SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 43A 43A Tc 60V 170A 73 mJ 10V ±20V
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    		 download 11 Weeks Surface Mount Tape & Reel (TR) 2014 HEXFET® Not For New Designs 1 (Unlimited) EAR99 5.85mm ROHS3 Compliant 8 8-PowerTDFN 1.17mm 5mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 6.1 ns 4.2W Ta 63W Tc 84A 22 ns N-Channel 4.6m Ω @ 50A, 10V 3.9V @ 50μA 2170pF @ 25V 66nC @ 10V 13ns 12 ns 20V 84A Tc 40V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, CoolMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 9 ns 650V 62.5W Tc 6A SWITCHING 0.66Ohm 40 ns SILICON N-Channel 660m Ω @ 3.22A, 10V 4.5V @ 214.55μA 543pF @ 100V 20nC @ 10V 8ns 10 ns 20V 6A 6A Tc 17A 115 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 94W 14 ns 40V 94W Tc 80A 0.0037Ohm SILICON N-Channel 3.7m Ω @ 80A, 10V 4V @ 53μA 5260pF @ 25V 66nC @ 10V 12ns 16 ns 20V 80A Tc 320A 200 mJ 10V ±20V
    IRF1010NSTRRPBF IRF1010NSTRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2001 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 180W Tc SWITCHING 0.011Ohm 55V SILICON N-Channel 11m Ω @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 75A 85A Tc 55V 290A 250 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.223mm 2.3876mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 DRAIN Single 143W 45 ns 143W Tc 99A SWITCHING 43 ns SILICON N-Channel 6.8m Ω @ 50A, 10V 2.5V @ 100μA 3779pF @ 50V 49nC @ 4.5V 216ns 96 ns 16V 60V 2.5 V 50A Tc 4.5V 10V ±16V
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    		 download 14 Weeks Tape & Reel (TR) 2001 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN 200W Tc SWITCHING 0.008Ohm 55V SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 75A 110A Tc 55V 390A 264 mJ 10V ±20V
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    		 download 14 Weeks Tape & Reel (TR) 2009 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.023Ohm 100V SILICON N-Channel 23m Ω @ 28A, 10V 4V @ 250μA 3130pF @ 25V 130nC @ 10V 57A 57A Tc 100V 180A 280 mJ 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2008 StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant DirectFET™ Isometric MF Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 83W Tc N-Channel 1.85m Ω @ 97A, 10V 3.9V @ 100μA 5317pF @ 25V 161nC @ 10V 159A Tc 40V 6V 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 7 DirectFET™ Isometric M2 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W 13 ns 2.5W Ta 46W Tc 17A SWITCHING 0.0049Ohm 42 ns SILICON N-Channel 4.9m Ω @ 43A, 10V 4V @ 100μA 2545pF @ 25V 72nC @ 10V 49ns 45 ns 20V 40V 17A Ta 288A 56 mJ 10V ±20V
    IPB77N06S212ATMA2 IPB77N06S212ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 158W 14 ns 55V 158W Tc 77A 0.0117Ohm 34 ns SILICON N-Channel 11.7m Ω @ 38A, 10V 4V @ 93μA 1770pF @ 25V 60nC @ 10V 27ns 26 ns 20V 55V 77A Tc 280 mJ 10V ±20V
    BSZ300N15NS5ATMA1 BSZ300N15NS5ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2015 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD YES S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 62.5W Tc SWITCHING 0.03Ohm 150V SILICON N-Channel 30m Ω @ 16A, 10V 4.6V @ 32μA 950pF @ 75V 13nC @ 10V 32A 32A Tc 150V 128A 30 mJ 8V 10V ±20V
    AUIRFZ48Z AUIRFZ48Z Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.83mm 8.6MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 91W 15 ns 2V 91W Tc 61A SWITCHING 35 ns SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 250μA 1720pF @ 25V 64nC @ 10V 69ns 39 ns 20V 55V 61A Tc 240A 10V ±20V
    IRF7457PBF IRF7457PBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA-LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.007Ohm 20V SILICON N-Channel 7m Ω @ 15A, 10V 3V @ 250μA 3100pF @ 10V 42nC @ 4.5V 15A 15A Ta 20V 120A 265 mJ 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~155°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 9.1m Ω @ 13A, 10V 1V @ 250μA 1010pF @ 15V 14nC @ 4.5V 13.6A Ta 30V 4.5V 10V ±20V
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 5mm ROHS3 Compliant Lead Free 16A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 11 ns 2.25V 2.5W Ta 16A SWITCHING 14 ns SILICON N-Channel 6.8m Ω @ 16A, 10V 2.25V @ 250μA 2080pF @ 15V 27nC @ 4.5V 10ns 3.7 ns 20V 30V 16A Ta 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.014Ohm 30V SILICON N-Channel 14m Ω @ 15A, 4.5V 3V @ 250μA 1801pF @ 10V 26nC @ 5V 10.8A 10.8A Ta 30V 100A 4.5V ±20V
    IRF9410PBF IRF9410PBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.03Ohm 30V SILICON N-Channel 30m Ω @ 7A, 10V 1V @ 250μA 550pF @ 25V 27nC @ 10V 7A 7A Ta 30V 37A 70 mJ 4.5V 10V ±20V
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    		 download 52 Weeks Surface Mount Tube 2000 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 56A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 110W 15 ns 4V 110W Tc 93 ns 56A 55 ns N-Channel 16m Ω @ 34A, 10V 4V @ 250μA 2430pF @ 25V 110nC @ 10V 130ns 78 ns 20V 55V 55V 4 V 56A Tc 10V ±20V
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    		 download 9 Weeks Tube 1999 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 66W Tc SWITCHING 0.205Ohm 100V SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 13A 13A Tc 100V 52A 194 mJ 10V ±20V
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    		 download 18 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1W Ta N-Channel 160m Ω @ 1.9A, 10V 4V @ 250μA 190pF @ 25V 11nC @ 10V 1.9A Ta 55V 10V ±20V
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    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Lead Free 8.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 6.3 mm 2.5W 6.3 ns 2.5W Ta 8.3A SWITCHING 0.025Ohm 11 ns SILICON N-Channel 25m Ω @ 7A, 4.5V 3V @ 250μA 14nC @ 5V 1.2ns 2.2 ns 20V 30V 30V 3 V 8.3A Ta 4.5V ±20V
    IRLR3715ZPBF IRLR3715ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.7056mm RoHS Compliant Lead Free 49A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 11MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 40W 7.8 ns 2.1V 40W Tc 17 ns 49A SWITCHING 10 ns SILICON N-Channel 11m Ω @ 15A, 10V 2.55V @ 250μA 810pF @ 10V 11nC @ 4.5V 13ns 4.3 ns 20V 20V 49A Tc 200A 4.5V 10V ±20V
    IRLR7807ZPBF IRLR7807ZPBF Infineon Technologies $0.00
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 40W Tc N-Channel 13.8m Ω @ 15A, 10V 2.25V @ 250μA 780pF @ 15V 11nC @ 4.5V 43A Tc 30V 4.5V 10V ±20V