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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLR8103VPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 89A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 9mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | 1 | Single | 89W | 10 ns | 3V | 115W Tc | 91A | 24 ns | N-Channel | 9m Ω @ 15A, 10V | 3V @ 250μA | 2672pF @ 16V | 27nC @ 5V | 9ns | 18 ns | 20V | 30V | 30V | 3 V | 91A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4420DYPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.009Ohm | 30V | SILICON | N-Channel | 9m Ω @ 12.5A, 10V | 1V @ 250μA | 2240pF @ 15V | 78nC @ 10V | 12.5A | 12.5A Ta | 30V | 50A | 400 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL024NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 1999 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1W Ta | N-Channel | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 510pF @ 25V | 15.6nC @ 5V | 3.1A Ta | 55V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.115Ohm | 100V | SILICON | N-Channel | 115m Ω @ 10A, 10V | 4V @ 250μA | 640pF @ 25V | 44nC @ 10V | 16A | 16A Tc | 100V | 60A | 150 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR7843PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 140W Tc | N-Channel | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 161A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL1404Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.82mm | 5.9MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 19 ns | 1.4V | 200W Tc | 160A | SWITCHING | 30 ns | SILICON | N-Channel | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 5080pF @ 25V | 110nC @ 5V | 180ns | 49 ns | 16V | 40V | 160A Tc | 790A | 490 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRFS7730TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 21 ns | 375W Tc | 195A | SWITCHING | 0.0026Ohm | 75V | 180 ns | SILICON | N-Channel | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 13660pF @ 25V | 407nC @ 10V | 120ns | 115 ns | 20V | 195A Tc | 75V | 984A | 898 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N04S303AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | ULTRA LOW RESISTANCE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 214W | 30 ns | 40V | 214W Tc | 100A | 0.0028Ohm | 46 ns | SILICON | N-Channel | 2.8m Ω @ 80A, 10V | 4V @ 150μA | 9600pF @ 25V | 145nC @ 10V | 16ns | 17 ns | 20V | 100A Tc | 400A | 898 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R190C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 151W Tc | SWITCHING | 0.19Ohm | 600V | SILICON | N-Channel | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 1400pF @ 100V | 63nC @ 10V | 20.2A | 20.2A Tc | 600V | 59A | 418 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP034N08N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-220-3 | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 18 ns | 80V | 167W Tc | 120A | SWITCHING | 0.0034Ohm | 37 ns | SILICON | N-Channel | 3.4m Ω @ 100A, 10V | 3.8V @ 108μA | 6240pF @ 40V | 87nC @ 10V | 12ns | 12 ns | 20V | 80V | 120A Tc | 480A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S204ATMA4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 300W | 27 ns | 40V | 300W Tc | 100A | 56 ns | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 5300pF @ 25V | 172nC @ 10V | 46ns | 33 ns | 20V | 40V | 100A Tc | 400A | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA60R190E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 34W Tc | SWITCHING | 0.19Ohm | 600V | SILICON | N-Channel | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 1400pF @ 100V | 63nC @ 10V | 20.2A Tc | 600V | 59A | 418 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPA11N60C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 11A | 3 | AVALANCHE RATED | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 33W | 10 ns | 600V | 33W Tc | 11A | SWITCHING | 44 ns | SILICON | N-Channel | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 1200pF @ 25V | 60nC @ 10V | 5ns | 20V | 11A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF2907ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 4.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 19 ns | 4V | 300W Tc | 75A | SWITCHING | 97 ns | SILICON | N-Channel | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 7500pF @ 25V | 270nC @ 10V | 140ns | 100 ns | 20V | 75V | 160A Tc | 680A | 690 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPI65R190CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 151W | 12 ns | 650V | 151W Tc | 17.5A | SWITCHING | 53.2 ns | SILICON | N-Channel | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 1850pF @ 100V | 68nC @ 10V | 8.4ns | 6.4 ns | 20V | 17.5A Tc | 57.2A | 484 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7534TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | FET General Purpose Power | 1 | TO-263CB | DRAIN | Single | 140 ns | 3.7V | 290W Tc | 240A | SWITCHING | 60V | 195 ns | SILICON | N-Channel | 1.95m Ω @ 100A, 10V | 3.7V @ 250μA | 9990pF @ 25V | 300nC @ 10V | 120ns | 86 ns | 20V | 240A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB120N10S403ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 20 ns | 100V | 250W Tc | 120A | 45 ns | N-Channel | 3.5m Ω @ 100A, 10V | 3.5V @ 180μA | 10120pF @ 25V | 140nC @ 10V | 10ns | 40 ns | 20V | 120A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N60S5 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | Non-RoHS Compliant | 7.3A | 3 | AVALANCHE RATED, HIGH VOLTAGE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 600mOhm | Surface Mount | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | TO-252AA | DRAIN | Not Halogen Free | Single | 83W | 83W Tc | 7.3A | SWITCHING | 170 ns | SILICON | N-Channel | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 970pF @ 25V | 35nC @ 10V | 40ns | 20 ns | 20V | 600V | 600V | 4.5 V | 7.3A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BTS115ANKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | TEMPFET® | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | TO-220AB | DRAIN | 50W Tc | 15.5A | SWITCHING | 0.12Ohm | 50V | SILICON | N-Channel | 120m Ω @ 7.8A, 4.5V | 2.5V @ 1mA | 735pF @ 25V | 15.5A Tc | 50V | 62A | 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD03N50C3BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 38W Tc | 500V | SILICON | N-Channel | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 350pF @ 25V | 15nC @ 10V | 3.2A | 3.2A Tc | 560V | 9.6A | 100 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPD100N03S2L-04 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | Obsolete | 1 (Unlimited) | 4 | EAR99 | Non-RoHS Compliant | 100A | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 100A | SWITCHING | 0.0063Ohm | SILICON | N-Channel | 4.2m Ω @ 50A, 10V | 2V @ 100μA | 3320pF @ 25V | 89.7nC @ 10V | 100A Tc | 400A | 325 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 200W Tc | SWITCHING | 0.006Ohm | 30V | SILICON | N-Channel | 6m Ω @ 71A, 10V | 1V @ 250μA | 5000pF @ 25V | 140nC @ 4.5V | 140A | 140A Tc | 30V | 470A | 610 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS23N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2000 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 170W Tc | SWITCHING | 0.1Ohm | 200V | SILICON | N-Channel | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 1960pF @ 25V | 86nC @ 10V | 24A | 24A Tc | 200V | 96A | 250 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405LPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 175°C | -55°C | 10.668mm | RoHS Compliant | Lead Free | 131A | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | 1 | 200W | 13 ns | 5.3mOhm | TO-262 | 200W Tc | 131A | 130 ns | N-Channel | 5.3mOhm @ 101A, 10V | 4V @ 250μA | 5480pF @ 25V | 260nC @ 10V | 190ns | 110 ns | 20V | 55V | 131A Tc | 55V | 5.48nF | 10V | ±20V | 5.3 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1404SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2001 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 162A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 4mOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 17 ns | 4V | 3.8W Ta 200W Tc | 110 ns | 162A | SWITCHING | 72 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 4V @ 250μA | 7360pF @ 25V | 200nC @ 10V | 140ns | 26 ns | 20V | 40V | 40V | 4 V | 75A | 162A Tc | 650A | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRL2505SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 200W Tc | SWITCHING | 0.01Ohm | 55V | SILICON | N-Channel | 8m Ω @ 54A, 10V | 2V @ 250μA | 5000pF @ 25V | 130nC @ 5V | 104A | 104A Tc | 55V | 360A | 500 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU4105ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | 2003 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.6mm | ROHS3 Compliant | Lead Free | 30A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 2.28mm | 6.1mm | 2.3mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 48W | 10 ns | 4V | 48W Tc | 29 ns | 30A | SWITCHING | 0.0245Ohm | 26 ns | SILICON | N-Channel | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 740pF @ 25V | 27nC @ 10V | 40ns | 24 ns | 20V | 55V | 55V | 4 V | 30A Tc | 120A | 29 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFR3708PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 87W Tc | SWITCHING | 0.0125Ohm | 30V | SILICON | N-Channel | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 2417pF @ 15V | 24nC @ 4.5V | 30A | 61A Tc | 30V | 244A | 213 mJ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3103PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | RoHS Compliant | Lead Free | Tin | 55A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.3876mm | 19mOhm | Through Hole | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | 260 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 69W | 9 ns | 1V | 107W Tc | 120 ns | 55A | SWITCHING | 20 ns | SILICON | N-Channel | 19m Ω @ 33A, 10V | 1V @ 250μA | 1600pF @ 25V | 50nC @ 4.5V | 210ns | 54 ns | 16V | 30V | 30V | 1 V | 20A | 55A Tc | 220A | 240 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| IRF7321D2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | FETKY™ | Obsolete | 1 (Unlimited) | EAR99 | 4.9784mm | RoHS Compliant | Lead Free | -4.7A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 62mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | Single | 2W | 13 ns | 2W Ta | 4.7A | 34 ns | P-Channel | 62m Ω @ 4.9A, 10V | 1V @ 250μA | 710pF @ 25V | 34nC @ 10V | 13ns | 32 ns | 20V | -30V | Schottky Diode (Isolated) | 4.7A Ta | 30V | 4.5V 10V | ±20V |