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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFL4105PBF IRFL4105PBF Infineon Technologies $0.00
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    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.045Ohm 55V SILICON N-Channel 45m Ω @ 3.7A, 10V 4V @ 250μA 660pF @ 25V 35nC @ 10V 3.7A 3.7A Ta 55V 10V ±20V
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    		 download Through Hole Tube 2002 HEXFET® Obsolete 1 (Unlimited) 10.668mm RoHS Compliant Lead Free 75A No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) 140W 19 ns 140W Tc 75A 38 ns N-Channel 8.5m Ω @ 51A, 10V 4V @ 100μA 2810pF @ 25V 86nC @ 10V 90ns 54 ns 20V 60V 75A Tc 10V ±20V
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 35W Tc SWITCHING 0.19Ohm 100V SILICON N-Channel 190m Ω @ 5.2A, 10V 4V @ 250μA 310pF @ 25V 10nC @ 10V 8.7A 8.7A Tc 100V 35A 18 mJ 10V ±20V
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    		 download Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -55°C 6.7056mm RoHS Compliant Lead Free 8.7A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 190MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) 35W 8.3 ns 4V 190mOhm IPAK (TO-251) 35W Tc 36 ns 8.7A 27 ns N-Channel 190mOhm @ 5.2A, 10V 4V @ 250μA 310pF @ 25V 10nC @ 10V 26ns 23 ns 20V 100V 100V 4 V 8.7A Tc 100V 310pF 10V ±20V 190 mΩ
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 200W Tc SWITCHING 0.082Ohm 200V SILICON N-Channel 82m Ω @ 18A, 10V 5.5V @ 250μA 2370pF @ 25V 107nC @ 10V 31A 31A Tc 200V 124A 420 mJ 10V ±30V
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    		 download 16 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 150W Tc N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 1160pF @ 25V 67nC @ 10V 18A Tc 200V 10V ±20V
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Tc SWITCHING 0.03Ohm 30V SILICON N-Channel 30m Ω @ 7.3A, 10V 1V @ 250μA 550pF @ 25V 28nC @ 10V 7.3A 7.3A Tc 30V 58A 70 mJ 4.5V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2004 SIPMOS® Discontinued 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 80A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 300W 22 ns 55V 300W Tc 80A 0.0077Ohm 54 ns SILICON N-Channel 7.7m Ω @ 80A, 10V 4V @ 240μA 3660pF @ 25V 187nC @ 10V 53ns 32 ns 20V 55V 80A Tc 700 mJ 10V ±20V
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 10.36mm RoHS Compliant Lead Free 3.2A 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.45mm 4.57mm Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 29.7W 7 ns 3V 29.7W Tc 3.2A SWITCHING 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 12 ns 20V 600V 3.2A Tc 9.6A 100 mJ 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 RoHS Compliant Lead Free 4.5A AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 Halogen Free Single 50W 55 ns 600V 50W Tc 4.5A 0.95Ohm 60 ns SILICON N-Channel 950m Ω @ 2.8A, 10V 5.5V @ 200μA 580pF @ 25V 22.9nC @ 10V 30ns 15 ns 20V 600V 4.5A Tc 9A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 SIPMOS® no Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead -8.8A 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 42W 16 ns -60V 42W Tc 8.8A 48 ns SILICON P-Channel 300m Ω @ 6.2A, 10V 4V @ 250μA 420pF @ 25V 13nC @ 10V 46ns 14 ns 20V 8.8A Ta 60V 70 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB 79W 15 ns 79W Tc 50A SWITCHING 0.0084Ohm 60V 37 ns SILICON N-Channel 8.4m Ω @ 50A, 10V 2.2V @ 34μA 4900pF @ 30V 29nC @ 4.5V 26ns 7 ns 20V 50A Tc 60V 200A 4.5V 10V ±20V
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    		 download 13 Weeks Surface Mount Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) 6 EAR99 10.668mm ROHS3 Compliant Tin No 7 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.652mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 300W 17 ns 2V 330W Tc 240A SWITCHING 110 ns SILICON N-Channel 1.6m Ω @ 160A, 10V 4V @ 250μA 6930pF @ 25V 260nC @ 10V 150ns 100 ns 20V 40V 240A Tc 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 300W Tc 240A 0.00087Ohm SILICON N-Channel 0.87m Ω @ 100A, 10V 4V @ 230μA 23000pF @ 25V 290nC @ 10V 240A Tc 960A 750 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant No 3 ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 300W 17 ns 2V 300W Tc 195A SWITCHING 83 ns SILICON N-Channel 1.5m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 190ns 120 ns 20V 24V 195A Tc 270 mJ 10V ±20V
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 43 ns 600V 34W Tc 13.4A SWITCHING 47 ns SILICON N-Channel 330m Ω @ 9.4A, 10V 5V @ 750μA 1820pF @ 25V 84nC @ 10V 24ns 5 ns 20V 13.4A Tc 650V 460 mJ 10V ±20V
    IPP60R120C7XKSA1 IPP60R120C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 1997 CoolMOS™ C7 yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 600V 92W Tc 19A SWITCHING 0.12Ohm SILICON N-Channel 120m Ω @ 7.8A, 10V 4V @ 390μA 1500pF @ 400V 34nC @ 10V 19A Tc 66A 78 mJ 10V ±20V
    IPI111N15N3GAKSA1 IPI111N15N3GAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2011 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 10.36mm ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant 9.45mm 4.52mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Halogen Free Single 214W 17 ns 150V 214W Tc 83A SWITCHING 32 ns SILICON N-Channel 11.1m Ω @ 83A, 10V 4V @ 160μA 3230pF @ 75V 55nC @ 10V 35ns 9 ns 20V 83A Tc 8V 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 9 EAR99 ROHS3 Compliant Lead Free 15 DirectFET™ Isometric L8 No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED R-XBCC-N9 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.7V 3.3W Ta 125W Tc 375A SWITCHING 0.0035Ohm 100V SILICON N-Channel 3.5m Ω @ 74A, 10V 4V @ 250μA 11560pF @ 25V 300nC @ 10V 20A 375A Tc 100V 500A 260 mJ 10V ±20V
    IPP60R125P6XKSA1 IPP60R125P6XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2014 CoolMOS™ P6 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 14 ns 600V 219W Tc 30A SWITCHING 0.125Ohm 44 ns SILICON N-Channel 125m Ω @ 11.6A, 10V 4.5V @ 960μA 2660pF @ 100V 56nC @ 10V 9ns 5 ns 30V 30A Tc 87A 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2007 HEXFET® Not For New Designs 1 (Unlimited) 9 EAR99 9.144mm ROHS3 Compliant Lead Free No 11 DirectFET™ Isometric L8 508μm 7.112mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER BOTTOM 260 30 R-XBCC-N9 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W 21 ns 3.8W Ta 125W Tc 46A SWITCHING 56 ns SILICON N-Channel 1m Ω @ 160A, 10V 4V @ 250μA 11880pF @ 25V 330nC @ 10V 71ns 42 ns 20V 40V 375A 46A Ta 375A Tc 270 mJ 10V ±20V
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    		 download 39 Weeks Surface Mount Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) 6 EAR99 175°C -55°C 10.35mm ROHS3 Compliant Tin No 7 ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.55mm Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-XSSO-G6 FET General Purpose Power 300W 1 DRAIN Single 300W 19 ns 2V 429A SWITCHING 86 ns N-Channel 1m Ω @ 160A, 10V 4V @ 250μA 7700pF @ 19V 252nC @ 10V 240ns 93 ns 20V 24V 240A 240A Tc 230 mJ
    IPA60R165CPXKSA1 IPA60R165CPXKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 12 ns 600V 34W Tc 21A SWITCHING 650V 50 ns SILICON N-Channel 165m Ω @ 12A, 10V 3.5V @ 660μA 2000pF @ 100V 52nC @ 10V 5ns 20V 21A Tc 522 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 104W 13 ns 600V 104W Tc 13.8A SWITCHING 0.28Ohm 100 ns SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 11ns 12 ns 20V 13.8A Tc 40A 284 mJ 10V ±20V
    IRFS59N10DTRLP IRFS59N10DTRLP Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 59A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 10.54mm 25mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Not Qualified 1 DRAIN Single 200W 16 ns 5.5V 3.8W Ta 200W Tc 59A SWITCHING 20 ns SILICON N-Channel 25m Ω @ 35.4A, 10V 5.5V @ 250μA 2450pF @ 25V 114nC @ 10V 90ns 12 ns 30V 100V 100V 5.5 V 59A Tc 10V ±30V
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    		 download 10 Weeks Through Hole Tube 2006 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 55V 190W Tc 80A 0.0091Ohm SILICON N-Channel 9.1m Ω @ 50A, 10V 4V @ 125μA 2360pF @ 25V 80nC @ 10V 80A Tc 320A 370 mJ 10V ±20V
    IPA60R280E6XKSA1 IPA60R280E6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 32W 600V 32W Tc 13.8A SWITCHING 0.28Ohm SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 20V 13.8A Tc 40A 284 mJ 10V ±20V
    IRF7468PBF IRF7468PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 9.4A No 8 AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 15.5MOhm Surface Mount -55°C~150°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 7.6 ns 2V 2.5W Ta 9.4A SWITCHING 20 ns SILICON N-Channel 15.5m Ω @ 9.4A, 10V 2V @ 250μA 2460pF @ 20V 34nC @ 4.5V 2.3ns 3.8 ns 12V 40V 9.4A Ta 75A 4.5V 10V ±12V
    IRL520NSPBF IRL520NSPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 48W Tc N-Channel 180m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 10A Tc 100V 4V 10V ±16V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 82W Tc SWITCHING 0.0136Ohm 55V SILICON N-Channel 13.6m Ω @ 31A, 10V 4V @ 250μA 1460pF @ 25V 46nC @ 10V 51A 51A Tc 55V 200A 97 mJ 10V ±20V