Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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BSC010NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 25V | 2.5W Ta 96W Tc | 38A | SWITCHING | N-Channel | 1.05m Ω @ 30A, 10V | 2V @ 250μA | 4200pF @ 12V | 59nC @ 10V | 6.2ns | 20V | 38A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRLR024NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 17A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 80mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 45W | 7.1 ns | 2V | 45W Tc | 90 ns | 17A | 175°C | SWITCHING | 20 ns | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | 29 ns | 16V | 55V | 55V | 2 V | 17A Tc | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
IRF6644TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 10.3A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric MN | No SVHC | 508μm | 5.0546mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 17 ns | 4.8V | 2.8W Ta 89W Tc | 8.3A | 34 ns | SILICON | N-Channel | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 2210pF @ 25V | 47nC @ 10V | 26ns | 16 ns | 20V | 100V | 4.8 V | 10.3A Ta 60A Tc | 228A | 86 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPD068N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 100V | 150W Tc | 90A | SWITCHING | 0.0068Ohm | SILICON | N-Channel | 6.8m Ω @ 90A, 10V | 3.5V @ 90μA | 4910pF @ 50V | 68nC @ 10V | 90A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR5305TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 14 ns | 110W Tc | 31A | SWITCHING | 0.065Ohm | 39 ns | SILICON | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | 31A Tc | 55V | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF9540NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | -23A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 117mOhm | Through Hole | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | Other Transistors | 1 | TO-220AB | DRAIN | Single | 140W | 15 ns | -4V | 140W Tc | 220 ns | -23A | SWITCHING | 51 ns | SILICON | P-Channel | 117m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 97nC @ 10V | 67ns | 51 ns | 20V | -100V | -100V | -4 V | 23A Tc | 100V | 76A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSC030P03NS3GAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | OptiMOS™ | no | Active | 3 (168 Hours) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 27 ns | -30V | 2.5W Ta 125W Tc | -25.4A | 150°C | SWITCHING | 0.0046Ohm | 98 ns | SILICON | P-Channel | 3m Ω @ 50A, 10V | 3.1V @ 345μA | 14000pF @ 15V | 186nC @ 10V | 105ns | 33 ns | 25V | -30V | 25.4A Ta 100A Tc | 30V | 200A | 345 mJ | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
IPD200N15N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 150W | 14 ns | 150V | 150W Tc | 50A | SWITCHING | 0.02Ohm | 23 ns | SILICON | N-Channel | 20m Ω @ 50A, 10V | 4V @ 90μA | 1820pF @ 75V | 31nC @ 10V | 11ns | 6 ns | 20V | 50A Tc | 200A | 170 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSC014N04LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Cut Tape (CT) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 16 ns | 2V | 40V | 2.5W Ta 96W Tc | 100A | 150°C | SWITCHING | 0.002Ohm | 55 ns | SILICON | N-Channel | 1.45m Ω @ 50A, 10V | 2V @ 250μA | 4000pF @ 20V | 55nC @ 10V | 20V | 40V | 31A Ta 100A Tc | 400A | 90 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFZ44EPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1999 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 48A | 3 | HIGH RELIABILITY, AVALANCHE RATED | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | 23mOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | Not Qualified | 1 | TO-220AB | DRAIN | Single | 110W | 12 ns | 4V | 110W Tc | 48A | SWITCHING | 70 ns | SILICON | N-Channel | 23m Ω @ 29A, 10V | 4V @ 250μA | 1360pF @ 25V | 60nC @ 10V | 60ns | 20V | 60V | 60V | 4 V | 48A Tc | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSC320N20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 200V | 125W Tc | 36A | SWITCHING | 0.032Ohm | SILICON | N-Channel | 32m Ω @ 36A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 9ns | 20V | 36A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
BSS192PH6327FTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 4.5mm | ROHS3 Compliant | Lead Free | 3 | TO-243AA | 1.5mm | 2.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | DRAIN | Single | 1W | 4.7 ns | -250V | 1W Ta | 190mA | 72 ns | SILICON | P-Channel | 12 Ω @ 190mA, 10V | 2V @ 130μA | 104pF @ 25V | 6.1nC @ 10V | 5.2ns | 50 ns | 20V | -250V | 190mA Ta | 250V | 8 pF | 2.8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
BSZ130N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25W | 30V | 2.1W Ta 25W Tc | 35A | SWITCHING | 0.013Ohm | SILICON | N-Channel | 13m Ω @ 20A, 10V | 2.2V @ 250μA | 970pF @ 15V | 13nC @ 10V | 2.6ns | 20V | 10A Ta 35A Tc | 140A | 9 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFL4310TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | Tin | 1.6A | No | 3 | HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 200mOhm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 100V | 7.8 ns | 2V | 1W Ta | 110 ns | 1.6A | 150°C | SWITCHING | 34 ns | SILICON | N-Channel | 200m Ω @ 1.6A, 10V | 4V @ 250μA | 330pF @ 25V | 25nC @ 10V | 18ns | 20 ns | 20V | 100V | 4 V | 2.2A | 1.6A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRLL024ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-261-4, TO-261AA | 1.4478mm | 3.7mm | 60MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | DRAIN | Single | 2.8W | 8.6 ns | 1W Ta | 5A | SWITCHING | 20 ns | SILICON | N-Channel | 60m Ω @ 3A, 10V | 3V @ 250μA | 380pF @ 25V | 11nC @ 5V | 33ns | 15 ns | 16V | 55V | 5A | 5A Tc | 40A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
IRFL024ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | 1A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 57.5MOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | DRAIN | Single | 2.8W | 7.8 ns | 4V | 1W Ta | 5.1A | SWITCHING | 30 ns | SILICON | N-Channel | 57.5m Ω @ 3.1A, 10V | 4V @ 250μA | 340pF @ 25V | 14nC @ 10V | 21ns | 23 ns | 20V | 55V | 55V | 4 V | 5.1A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFR120NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | 9.1A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 210mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | 1 | 1 | Single | 39W | 4.5 ns | 4V | 210mOhm | D-Pak | 48W Tc | 150 ns | 9.4A | 175°C | 32 ns | N-Channel | 210mOhm @ 5.6A, 10V | 4V @ 250μA | 330pF @ 25V | 25nC @ 10V | 23ns | 23 ns | 20V | 100V | 100V | 4 V | 9.4A Tc | 100V | 330pF | 10V | ±20V | 210 mΩ | |||||||||||||||||||||||||||||||||||||||||
BSZ086P03NS3EGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | ESD PROTECTED | 8-PowerTDFN | No SVHC | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 16 ns | -2.5V | -30V | 2.1W Ta 69W Tc | 13.5A | SWITCHING | 35 ns | SILICON | P-Channel | 8.6m Ω @ 20A, 10V | 3.1V @ 105μA | 4785pF @ 15V | 57.5nC @ 10V | 46ns | 8 ns | 25V | -30V | 13.5A Ta 40A Tc | 30V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
IRLL024NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 3.1A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 65mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRLL024NTRPBF | DUAL | GULL WING | R-PDSO-G4 | 1 | 1 | DRAIN | Single | 2.1W | 7.4 ns | 2V | 1W Ta | 58 ns | 3.1A | 150°C | SWITCHING | 18 ns | SILICON | N-Channel | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 510pF @ 25V | 15.6nC @ 5V | 21ns | 25 ns | 16V | 55V | 55V | 2 V | 3.1A Ta | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
BSS84PH6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | No SVHC | 900μm | 1.3mm | 12Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 17A | e3 | DUAL | GULL WING | 1 | Other Transistors | 60V | 1 | Halogen Free | Single | 360mW | 6.7 ns | -1.5V | -60V | 360mW Ta | 170mA | SWITCHING | 8.6 ns | SILICON | P-Channel | 8 Ω @ 170mA, 10V | 2V @ 20μA | 19pF @ 25V | 1.5nC @ 10V | 16.2ns | 20V | -1.5 V | 170mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRLR8743TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 3.1MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 135W | 19 ns | 1.9V | 135W Tc | 160A | SWITCHING | 21 ns | SILICON | N-Channel | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 4880pF @ 15V | 59nC @ 4.5V | 35ns | 17 ns | 20V | 30V | 1.9 V | 160A Tc | 640A | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSC520N15NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | 5.35mm | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | not_compliant | 1.1mm | 6.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | DRAIN | Halogen Free | Single | 57W | 7 ns | 3V | 57W Tc | 21A | SWITCHING | 0.052Ohm | 10 ns | SILICON | N-Channel | 52m Ω @ 18A, 10V | 4V @ 35μA | 890pF @ 75V | 12nC @ 10V | 4ns | 3 ns | 20V | 150V | 3 V | 21A Tc | 60 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF7470TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.013Ohm | 40V | SILICON | N-Channel | 13m Ω @ 10A, 10V | 2V @ 250μA | 3430pF @ 20V | 44nC @ 4.5V | 10A | 10A Ta | 40V | 85A | 300 mJ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC027N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 2V | 40V | 2.5W Ta 83W Tc | 100A | SWITCHING | SILICON | N-Channel | 2.7m Ω @ 50A, 10V | 2V @ 49μA | 6800pF @ 20V | 85nC @ 10V | 5.6ns | 20V | 24A | 24A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD122N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 100V | 94W Tc | 59A | SWITCHING | 0.0122Ohm | SILICON | N-Channel | 12.2m Ω @ 46A, 10V | 3.5V @ 46μA | 2500pF @ 50V | 35nC @ 10V | 59A Tc | 70 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC109N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 12 ns | 2.7V | 100V | 78W Tc | 63A | SWITCHING | 19 ns | SILICON | N-Channel | 10.9m Ω @ 46A, 10V | 3.5V @ 45μA | 2500pF @ 50V | 35nC @ 10V | 7ns | 5 ns | 20V | 63A Tc | 252A | 70 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRLI2910PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 27A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 Full Pack | No SVHC | 9.8044mm | 4.826mm | 30mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 63W | 11 ns | 2V | 63W Tc | 31A | SWITCHING | 2.5kV | 11 ns | SILICON | N-Channel | 26m Ω @ 16A, 10V | 2V @ 250μA | 3700pF @ 25V | 140nC @ 5V | 100ns | 55 ns | 16V | 100V | 100V | 2 V | 31A Tc | 520 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
IPT015N10N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 8 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerSFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Halogen Free | Single | 36 ns | 100V | 375W Tc | 300A | SWITCHING | 85 ns | SILICON | N-Channel | 1.5m Ω @ 150A, 10V | 3.8V @ 250μA | 16000pF @ 50V | 211nC @ 10V | 30ns | 30 ns | 20V | 32A | 300A Tc | 652 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRFPS3810PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Bulk | 2002 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 16.0782mm | ROHS3 Compliant | Contains Lead, Lead Free | 170A | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-274AA | No SVHC | 20.8mm | 5.3mm | 9Ohm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 441W | 24 ns | 580W Tc | 330 ns | 170A | SWITCHING | 45 ns | SILICON | N-Channel | 9m Ω @ 100A, 10V | 5V @ 250μA | 6790pF @ 25V | 390nC @ 10V | 270ns | 140 ns | 30V | 100V | 100V | 5 V | 170A Tc | 670A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
BSC010N04LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | ULTRA LOW RESISTANCE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 40V | 2.5W Ta 139W Tc | 100A | 72 ns | SILICON | N-Channel | 1.05m Ω @ 50A, 10V | 2V @ 250μA | 6200pF @ 20V | 87nC @ 10V | 48ns | 17 ns | 20V | 40V | Schottky Diode (Body) | 37A | 37A Ta 100A Tc | 400A | 230 mJ | 4.5V 10V | ±20V |
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