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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Lead Pitch | Min Supply Voltage | Number of Drivers | Frequency | Height | Width | Thickness | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | Current | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Power Supplies | Gain | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Voltage - Output | Max Output Current | Case Connection | Halogen Free | Output Current per Channel | Characteristic Impedance | Construction | RF/Microwave Device Type | Element Configuration | Current - Output | Power Dissipation | Turn On Delay Time | Interface IC Type | Driver Number of Bits | Built-in Protections | Threshold Voltage | Output Current Flow Direction | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Noise Figure | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn On Time | Channel Type | Output Peak Current Limit-Nom | Turn Off Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPA20N60C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 20.7A | No | 3 | AVALANCHE RATED | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 34.5W | 10 ns | 600V | 34.5W Tc | 20.7A | SWITCHING | 67 ns | SILICON | N-Channel | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 114nC @ 10V | 5ns | 4.5 ns | 20V | 20.7A Tc | 690 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 40 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | 20.7mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 278W | 15 ns | 600V | 278W Tc | 37.9A | 150°C | SWITCHING | 0.099Ohm | 75 ns | SILICON | N-Channel | 99m Ω @ 18.1A, 10V | 3.5V @ 1.21mA | 2660pF @ 100V | 119nC @ 10V | 12ns | 6 ns | 20V | 600V | 37.9A Tc | 796 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS314PEH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500mW | -30V | 500mW Ta | 1.5A | SILICON | P-Channel | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 294pF @ 15V | 2.9nC @ 10V | 3.9ns | 20V | 1.5A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8736TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 4.8MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 12 ns | 1.8V | 2.5W Ta | 18A | SWITCHING | 13 ns | SILICON | N-Channel | 4.8m Ω @ 18A, 10V | 2.35V @ 50μA | 2315pF @ 15V | 26nC @ 4.5V | 15ns | 7.5 ns | 20V | 30V | 1.8 V | 18A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 86A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.26mm | 6.22mm | 6.5MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Single | 79W | 12 ns | 1.8V | 79W Tc | 44 ns | 86A | SWITCHING | 15 ns | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 2330pF @ 15V | 26nC @ 4.5V | 12ns | 3.9 ns | 20V | 30V | 1.8 V | 86A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R400CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 112W Tc | SWITCHING | 0.4Ohm | SILICON | N-Channel | 400m Ω @ 3.8A, 10V | 3.5V @ 300μA | 700pF @ 100V | 32nC @ 10V | 14.7A Tc | 30A | 210 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K2P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 37W Tc | SWITCHING | 800V | SILICON | N-Channel | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 300pF @ 500V | 11nC @ 10V | 4.5A Tc | 800V | 11A | 10 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD096N08N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 80V | 100W Tc | SWITCHING | 0.0096Ohm | SILICON | N-Channel | 9.6m Ω @ 46A, 10V | 3.5V @ 46μA | 2410pF @ 40V | 35nC @ 10V | 73A | 73A Tc | 292A | 90 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K4CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 63W | 25 ns | 800V | 1.4Ohm | PG-TO252-3 | 63W Tc | 3.9A | 72 ns | N-Channel | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240μA | 570pF @ 100V | 23nC @ 10V | 15ns | 12 ns | 20V | 3.9A Tc | 800V | 570pF | 10V | ±20V | 1.4 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR48ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.3886mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.73mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 91W | 15 ns | 91W Tc | 42A | SWITCHING | 40 ns | SILICON | N-Channel | 11m Ω @ 37A, 10V | 4V @ 50μA | 1720pF @ 25V | 60nC @ 10V | 61ns | 35 ns | 20V | 55V | 42A Tc | 250A | 74 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD35N12S3L24ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2017 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W Tc | 0.032Ohm | 120V | SILICON | N-Channel | 24m Ω @ 35A, 10V | 2.4V @ 39μA | 2700pF @ 25V | 39nC @ 10V | 35A | 35A Tc | 120V | 140A | 175 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N08S2L21ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | DRAIN | Halogen Free | Single | 136W | 9 ns | 75V | 136W Tc | 30A | 0.026Ohm | 44 ns | SILICON | N-Channel | 20.5m Ω @ 25A, 10V | 2V @ 80μA | 1650pF @ 25V | 72nC @ 10V | 30ns | 11 ns | 20V | 75V | 30A Tc | 120A | 240 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80P03P4L07ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 88W | 8 ns | -30V | 88W Tc | 80A | SWITCHING | 0.0068Ohm | 15 ns | SILICON | P-Channel | 6.8m Ω @ 80A, 10V | 2V @ 130μA | 5700pF @ 25V | 80nC @ 10V | 4ns | 60 ns | 5V | 80A Tc | 30V | 320A | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8304MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | No | 7 | DirectFET™ Isometric MX | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | 100W | 16 ns | 3.2mOhm | DIRECTFET™ MX | 2.8W Ta 100W Tc | 28A | 19 ns | N-Channel | 2.2mOhm @ 28A, 10V | 2.35V @ 100μA | 4700pF @ 15V | 42nC @ 4.5V | 22ns | 13 ns | 20V | 30V | 1.8 V | 28A Ta 170A Tc | 30V | 4.7nF | 4.5V 10V | ±20V | 2.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS70R900P7SAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2005 | CoolMOS™ P7 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 30.5W Tc | N-Channel | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 211pF @ 400V | 6.8nC @ 10V | 6A Tc | 700V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5302TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | 2.1MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W | 18 ns | 3.6W Ta 100W Tc | 32A | SWITCHING | 22 ns | SILICON | N-Channel | 2.1m Ω @ 50A, 10V | 2.35V @ 100μA | 4400pF @ 15V | 76nC @ 10V | 51ns | 18 ns | 20V | 30V | 1.8 V | 32A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7862TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 3.3MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 16 ns | 2.5W Ta | 21A | SWITCHING | 18 ns | SILICON | N-Channel | 3.7m Ω @ 20A, 10V | 2.35V @ 100μA | 4090pF @ 15V | 45nC @ 4.5V | 19ns | 11 ns | 20V | 30V | 2.35 V | 21A Ta | 350 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7855TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 9.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 8.7 ns | 2.5W Ta | 12A | SWITCHING | 16 ns | SILICON | N-Channel | 9.4m Ω @ 12A, 10V | 4.9V @ 100μA | 1560pF @ 25V | 39nC @ 10V | 13ns | 12 ns | 20V | 60V | 12A Ta | 97A | 540 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -14A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 200mOhm | Surface Mount | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 3.8W | 15 ns | -4V | 3.8W Ta 79W Tc | 190 ns | -14A | 175°C | SWITCHING | 45 ns | SILICON | P-Channel | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 46 ns | 20V | -100V | 100V | -4 V | 14A Tc | 56A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6616TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 19A | No | 5 | DirectFET™ Isometric MX | No SVHC | 508μm | 5.0546mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 15 ns | 1.8V | 2.8W Ta 89W Tc | 15A | SWITCHING | 21 ns | SILICON | N-Channel | 5m Ω @ 19A, 10V | 2.25V @ 250μA | 3765pF @ 20V | 44nC @ 4.5V | 19ns | 4.4 ns | 20V | 40V | 19A Ta 106A Tc | 36 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ16DN25NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 6 ns | 250V | 62.5W Tc | 10.9A | SWITCHING | 0.165Ohm | 11 ns | SILICON | N-Channel | 165m Ω @ 5.5A, 10V | 4V @ 32μA | 920pF @ 100V | 11.4nC @ 10V | 4ns | 20V | 10.9A Tc | 44A | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC190N15NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 15 ns | 3V | 150V | 125W Tc | 50A | 150°C | SWITCHING | 25 ns | SILICON | N-Channel | 19m Ω @ 50A, 10V | 4V @ 90μA | 2420pF @ 75V | 31nC @ 10V | 53ns | 6 ns | 20V | 150V | 50A Tc | 200A | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | Tin | 27A | No | 3 | HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | 44MOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 130W | 11 ns | 4V | 130W Tc | 170 ns | 33A | SWITCHING | 39 ns | SILICON | N-Channel | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 35ns | 35 ns | 20V | 100V | 100V | 4 V | 33A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IR21368JPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 125°C | -40°C | RoHS Compliant | Lead Free | No | 32 | PLCC | 20V | 10V | 6 | 120μA | 3 | 300mV | 350mA | 200mA | 2W | 550 ns | HALF BRIDGE BASED MOSFET DRIVER | 2W | 550 ns | 190ns | 75 ns | 3-Phase | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE7232G | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Digi-Reel® | yes | 3 | 24 | EAR99 | 150°C | -40°C | 15.6mm | RoHS Compliant | Contains Lead | No | 24 | SOIC | Serial | 2.45mm | 7.6mm | 1Ohm | 3mA | 1A | 1 | 3mA | DUAL | GULL WING | 5V | 24 | 1.27mm | Peripheral Drivers | 5V | 5.5V | 8 | 1A | 240mA | 240mA | 8 | TRANSIENT; OVER CURRENT; THERMAL | 60 µs | 1A | 60 µs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ITS621L1E3220 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Through Hole | 85°C | -30°C | 16V | RoHS Compliant | 7 | TO-220-7 | 80mOhm | 4mA | 2 | 8A | 4.4A | 3.5A | 75W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ITS436L2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | 5 | EAR99 | 85°C | -30°C | 10mm | RoHS Compliant | No | 5 | TO-220-5 | 4.4mm | 9.25mm | 35mOhm | 800μA | 9.8A | 1 | 800μA | ZIG-ZAG | 12V | 3 | COMMERCIAL EXTENDED | Peripheral Drivers | 16V | 1 | 40A | 9.8A | 8.8A | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | 1 | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE | 75W | 200 µs | 9.8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGA615L7E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
85°C | -30°C | 3.2V | 2mm | RoHS Compliant | Lead Free | Gold | No | 7 | 1.575GHz | 1.3mm | 400μm | 5.6mA | 5.6mA | 1 | 18 dB | 50Ohm | COMPONENT | NARROW BAND MEDIUM POWER | 36mW | 0.9 dB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP000310472 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS141E3045ANTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 2 | EAR99 | 150°C | -40°C | 9.9mm | Non-RoHS Compliant | 9.2mm | MOS | 4.5mm | 1 | SINGLE | GULL WING | NOT SPECIFIED | 5V | NOT SPECIFIED | 3 | YES | 2.54mm | R-PSSO-G2 | 1 | Peripheral Drivers | Not Qualified | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | 1 | OVER CURRENT; OVER VOLTAGE; THERMAL | SINK | 60V | 60V | 35A |