Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRF8736PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2007 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 4.8MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | Single | 2.5W | 12 ns | 1.8V | 2.5W Ta | 24 ns | 18A | SWITCHING | 13 ns | SILICON | N-Channel | 4.8m Ω @ 18A, 10V | 2.35V @ 50μA | 2315pF @ 15V | 26nC @ 4.5V | 15ns | 7.5 ns | 20V | 30V | 30V | 1.8 V | 18A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IRFS7540PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2007 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 160W | 12 ns | 160W Tc | 110A | SWITCHING | 58 ns | SILICON | N-Channel | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 4555pF @ 25V | 130nC @ 10V | 76ns | 56 ns | 20V | 60V | 110A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRL6283MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 8 | DirectFET™ Isometric MD | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 2.1W | 23 ns | 800mV | 2.1W Ta 63W Tc | 211A | 116 ns | N-Channel | 0.75m Ω @ 50A, 10V | 1.1V @ 100μA | 8292pF @ 10V | 158nC @ 4.5V | 160ns | 192 ns | 12V | 38A Ta 211A Tc | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFS7434PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 294W | 24 ns | 3V | 294W Tc | 195A | SWITCHING | 40V | 115 ns | SILICON | N-Channel | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 10820pF @ 25V | 324nC @ 10V | 68ns | 68 ns | 20V | 195A Tc | 40V | 780A | 6V 10V | ±20V | |||||||||||||||||||||||||||||
IRFR7740PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount, Through Hole | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.39mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 140W | 10 ns | 3.7V | 140W Tc | 87A | 55 ns | N-Channel | 7.2m Ω @ 52A, 10V | 3.7V @ 100μA | 4430pF @ 25V | 126nC @ 10V | 36ns | 30 ns | 20V | 87A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFS7730PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 375W | 21 ns | 375W Tc | 195A | 180 ns | N-Channel | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 13660pF @ 25V | 407nC @ 10V | 120ns | 115 ns | 20V | 195A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFS7734PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 20 ns | 290W Tc | 183A | 124 ns | N-Channel | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 10150pF @ 25V | 270nC @ 10V | 123ns | 100 ns | 20V | 183A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFS7787PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 125W | 11 ns | 125W Tc | 76A | 51 ns | N-Channel | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 4020pF @ 25V | 109nC @ 10V | 48ns | 39 ns | 20V | 76A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFS7734-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2005 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 4.83mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 294W | 17 ns | 294W Tc | 197A | 123 ns | N-Channel | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 10130pF @ 25V | 270nC @ 10V | 85ns | 75 ns | 20V | 197A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFS3206TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 19 ns | 300W Tc | 120A | SWITCHING | 55 ns | SILICON | N-Channel | 3m Ω @ 75A, 10V | 4V @ 150μA | 6540pF @ 50V | 170nC @ 10V | 82ns | 83 ns | 20V | 60V | 120A Tc | 840A | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFP250MPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 16.129mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | No SVHC | 21.1mm | 5.2mm | 75MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | 1 | TO-247AC | Single | 214W | 14 ns | 4V | 214W Tc | 30A | SWITCHING | 41 ns | SILICON | N-Channel | 75m Ω @ 18A, 10V | 4V @ 250μA | 2159pF @ 25V | 123nC @ 10V | 43ns | 33 ns | 20V | 200V | 30A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
IRFS3207ZTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 120A | SWITCHING | 0.0041Ohm | SILICON | N-Channel | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 6920pF @ 50V | 170nC @ 10V | 68ns | 68 ns | 75V | 120A Tc | 670A | 170 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFS4310ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W | 20 ns | 250W Tc | 120A | SWITCHING | 0.006Ohm | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 4 V | 120A Tc | 560A | 10V | ±20V | ||||||||||||||||||||||||||||
IRL3713STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 3MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 330W | 16 ns | 2.5V | 330W Tc | 260A | SWITCHING | 40 ns | SILICON | N-Channel | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 5890pF @ 15V | 110nC @ 4.5V | 160ns | 57 ns | 20V | 30V | 30V | 2.5 V | 75A | 260A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||
IPB120P04P4L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2011 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 136W | 21 ns | -1.7V | -40V | 136W Tc | -120A | 175°C | 0.0052Ohm | 85 ns | SILICON | P-Channel | 3.1m Ω @ 100A, 10V | 2.2V @ 340μA | 15000pF @ 25V | 234nC @ 10V | 16ns | 57 ns | 16V | -40V | 120A Tc | 40V | 480A | 78 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||
IRFR13N20DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 13A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 235mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 11 ns | 5.5V | 110W Tc | 210 ns | 13A | SWITCHING | 17 ns | SILICON | N-Channel | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 830pF @ 25V | 38nC @ 10V | 27ns | 10 ns | 30V | 200V | 200V | 5.5 V | 13A Tc | 52A | 10V | ±30V | ||||||||||||||||||||||
IRF9Z34NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | -19A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 100mOhm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 68W | 13 ns | -2V | 3.8W Ta 68W Tc | 82 ns | -19A | 175°C | SWITCHING | 30 ns | SILICON | P-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | 41 ns | 20V | -55V | 55V | -4 V | 19A Tc | 68A | 10V | ±20V | ||||||||||||||||||||||
SPD30P06PGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Not Halogen Free | 125W | 13 ns | -60V | 125W Tc | 30A | 0.075Ohm | 30 ns | SILICON | P-Channel | 75m Ω @ 21.5A, 10V | 4V @ 1.7mA | 1535pF @ 25V | 48nC @ 10V | 11ns | 20 ns | 20V | 30A Tc | 60V | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRFR1018ETRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 13 ns | 110W Tc | 79mA | SWITCHING | 0.0084Ohm | 55 ns | SILICON | N-Channel | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 2290pF @ 50V | 69nC @ 10V | 35ns | 46 ns | 20V | 60V | 56A | 56A Tc | 88 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
BSC900N20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 62.5W | 200V | 62.5W Tc | 15.2A | SWITCHING | 0.09Ohm | SILICON | N-Channel | 90m Ω @ 7.6A, 10V | 4V @ 30μA | 920pF @ 100V | 11.6nC @ 10V | 4ns | 20V | 15.2A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPD034N06N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 167W | 38 ns | 60V | 167W Tc | 100A | SWITCHING | 63 ns | SILICON | N-Channel | 3.4m Ω @ 100A, 10V | 4V @ 93μA | 11000pF @ 30V | 130nC @ 10V | 161ns | 16 ns | 20V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||
BSC123N10LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 114W | 100V | 114W Tc | 10.6A | SWITCHING | SILICON | N-Channel | 12.3m Ω @ 50A, 10V | 2.4V @ 72μA | 4900pF @ 50V | 68nC @ 10V | 25ns | 20V | 10.6A Ta 71A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRLR3110ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.52mm | 6.22mm | 14MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W | 24 ns | 140W Tc | 42A | 175°C | SWITCHING | 33 ns | SILICON | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 42A Tc | 250A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||
BSC16DN25NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 62.5W | 250V | 62.5W Tc | 10.9A | SWITCHING | SILICON | N-Channel | 165m Ω @ 5.5A, 10V | 4V @ 32μA | 920pF @ 100V | 11.4nC @ 10V | 4ns | 20V | 10.9A Tc | 44A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF640NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 18A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 150mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 150W | 10 ns | 4V | 150W Tc | 251 ns | 18A | 175°C | SWITCHING | 23 ns | SILICON | N-Channel | 150m Ω @ 11A, 10V | 4V @ 250μA | 1160pF @ 25V | 67nC @ 10V | 19ns | 5.5 ns | 20V | 200V | 200V | 4 V | 18A Tc | 72A | 247 mJ | 10V | ±20V | |||||||||||||||||||
IRF7480MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 10 | DirectFET™ Isometric ME | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-XBCC-N6 | 1 | 1 | DRAIN | Single | 21 ns | 96W Tc | 217A | SWITCHING | 40V | 68 ns | SILICON | N-Channel | 1.2m Ω @ 132A, 10V | 3.9V @ 150μA | 6680pF @ 25V | 185nC @ 10V | 70ns | 58 ns | 20V | 217A Tc | 40V | 868A | 206 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSC057N08NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 80V | 2.5W Ta 114W Tc | 16A | SWITCHING | 0.0057Ohm | SILICON | N-Channel | 5.7m Ω @ 50A, 10V | 3.5V @ 73μA | 3900pF @ 40V | 56nC @ 10V | 14ns | 20V | 16A Ta 100A Tc | 400A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
BSZ035N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8 | AVALANCHE RATED | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-C5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W | 10 ns | 2V | 2.1W Ta 69W Tc | 18A | SWITCHING | 0.0043Ohm | 30V | 38 ns | SILICON | N-Channel | 3.5m Ω @ 20A, 10V | 2V @ 250μA | 5700pF @ 15V | 74nC @ 10V | 5.8ns | 4.8 ns | 20V | 18A Ta 40A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
BSC014NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 5 ns | 25V | 2.5W Ta 74W Tc | 33A | SWITCHING | 0.002Ohm | 25 ns | SILICON | N-Channel | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 2700pF @ 12V | 39nC @ 10V | 3.6 ns | 20V | 33A Ta 100A Tc | 400A | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRF6645TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.95mm | ROHS3 Compliant | Lead Free | Tin | 5.7A | No | 7 | DirectFET™ Isometric SJ | 410μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 9.2 ns | 2.2W Ta 42W Tc | 5.7mA | SWITCHING | 0.035Ohm | 18 ns | SILICON | N-Channel | 35m Ω @ 5.7A, 10V | 4.9V @ 50μA | 890pF @ 25V | 20nC @ 10V | 5ns | 5.1 ns | 20V | 100V | 5.7A Ta 25A Tc | 45A | 29 mJ | 10V | ±20V |
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