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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    SPB80N03S203GATMA1 SPB80N03S203GATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc 80A N-Channel 3.1m Ω @ 80A, 10V 4V @ 250μA 7020pF @ 25V 150nC @ 10V 80A Tc 30V 10V ±20V
    SPI08N80C3XKSA1 SPI08N80C3XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 8A 3 AVALANCHE RATED, HIGH VOLTAGE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 104W 25 ns 800V 104W Tc 8A SWITCHING 0.65Ohm 65 ns SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 60nC @ 10V 15ns 7 ns 20V 8A 8A Tc 24A 10V ±20V
    SPW52N50C3FKSA1 SPW52N50C3FKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 417W Tc 0.07Ohm 500V SILICON N-Channel 70m Ω @ 30A, 10V 3.9V @ 2.7mA 6800pF @ 25V 290nC @ 10V 52A 52A Tc 560V 156A 1800 mJ 10V ±20V
    SPN03N60C3 SPN03N60C3 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 CoolMOS™ Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant Contains Lead 700mA 3 TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 1.8W Ta 700mA SWITCHING 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 3 ns 20V 650V 3 V 0.7A 700mA Ta 3A 10V ±20V
    BSO119N03S BSO119N03S Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 8 SMD/SMT EAR99 RoHS Compliant Lead Free 9A 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 16.3mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 1.56W 1.6V 1.56W Ta 9A SWITCHING 18 ns SILICON N-Channel 11.9m Ω @ 11A, 10V 2V @ 25μA 1730pF @ 15V 13nC @ 5V 3.8ns 3.8 ns 20V 30V 30V 1.6 V 9A 9A Ta 93 pF 4.5V 10V ±20V
    BSP171PL6327HTSA1 BSP171PL6327HTSA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 SIPMOS® yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant No 4 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 6 ns 1.8W Ta 1.9A SWITCHING 0.3Ohm 60V 208 ns SILICON P-Channel 300m Ω @ 1.9A, 10V 2V @ 460μA 460pF @ 25V 20nC @ 10V 25ns 87 ns 20V 1.9A Ta 60V 55 pF 4.5V 10V ±20V
    SPB16N50C3ATMA1 SPB16N50C3ATMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 160W Tc SWITCHING 0.28Ohm 500V SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 16A 16A Tc 560V 48A 460 mJ 10V ±20V
    IRFB3407ZPBF IRFB3407ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 230W Tc 120A N-Channel 6.4m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 120A Tc 75V 10V ±20V
    IPB050N06NGATMA1 IPB050N06NGATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2007 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 300W Tc 100A SWITCHING 0.0047Ohm 60V SILICON N-Channel 4.7m Ω @ 100A, 10V 4V @ 270μA 6100pF @ 30V 167nC @ 10V 20V 100A Tc 60V 400A 10V ±20V
    IPD65R380E6ATMA1 IPD65R380E6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ E6 Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 10 ns 650V 83W Tc 10.6A SWITCHING 57 ns SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 7ns 8 ns 20V 10.6A Tc 29A 215 mJ 10V ±20V
    IPD90N04S304ATMA1 IPD90N04S304ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 136W Tc 0.0036Ohm 40V SILICON N-Channel 3.6m Ω @ 80A, 10V 4V @ 90μA 5200pF @ 25V 80nC @ 10V 90A 90A Tc 40V 360A 260 mJ 10V ±20V
    IRL3713STRRPBF IRL3713STRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 330W 16 ns 330W Tc 260A SWITCHING 40 ns SILICON N-Channel 3m Ω @ 38A, 10V 2.5V @ 250μA 5890pF @ 15V 110nC @ 4.5V 160ns 57 ns 20V 30V 75A 260A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN SWITCHING 0.03Ohm 100V SILICON N-Channel 26m Ω @ 29A, 10V 2V @ 250μA 3700pF @ 25V 140nC @ 5V 55A 55A Tc 100V 190A 520 mJ
    IRF3808STRRPBF IRF3808STRRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 16 ns 200W Tc 106A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 82A, 10V 4V @ 250μA 5310pF @ 25V 220nC @ 10V 140ns 120 ns 20V 75V 75A 106A Tc 550A 10V ±20V
    IPB180N03S4LH0ATMA1 IPB180N03S4LH0ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 9 ns 30V 250W Tc 180A 0.00095Ohm 60 ns SILICON N-Channel 0.95m Ω @ 100A, 10V 2.2V @ 200μA 23000pF @ 25V 300nC @ 10V 7ns 25 ns 16V 180A Tc 980 mJ 4.5V 10V ±16V
    IRF2804STRRPBF IRF2804STRRPBF Infineon Technologies $0.00
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    		 10 Weeks Tape & Reel (TR) 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.002Ohm 40V SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 75A 75A Tc 40V 1080A 540 mJ 10V ±20V
    IPW60R280P6FKSA1 IPW60R280P6FKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 3 TO-247-3 Through Hole 38.000013g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 104W 12 ns 600V 252mOhm PG-TO247-3 104W Tc 13.8A 36 ns N-Channel 280mOhm @ 5.2A, 10V 4.5V @ 430μA 1190pF @ 100V 25.5nC @ 10V 6ns 20V 13.8A Tc 600V 1.19nF 10V ±20V 280 mΩ
    IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2005 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10.31mm ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.57mm 9.45mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 300W 18 ns 55V 300W Tc 100A 0.0056Ohm 98 ns SILICON N-Channel 4.4m Ω @ 80A, 10V 2V @ 250μA 5660pF @ 25V 230nC @ 10V 25ns 24 ns 20V 55V 100A Tc 400A 810 mJ 4.5V 10V ±20V
    IPA50R199CPXKSA1 IPA50R199CPXKSA1 Infineon Technologies $0.00
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    		 download Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 Through Hole 10.65mm ROHS3 Compliant 3 TO-220-3 Full Pack No SVHC 16.15mm 4.85mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 139W 35 ns 139W Tc 17A SWITCHING 0.199Ohm 80 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1800pF @ 100V 45nC @ 10V 14ns 10 ns 20V 500V 550V 3 V 17A Tc 40A 10V ±20V
    IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE 83.3W 10 ns 650V 83.3W Tc 8.7A SWITCHING 0.42Ohm 38 ns SILICON N-Channel 420m Ω @ 3.4A, 10V 4.5V @ 340μA 870pF @ 100V 32nC @ 10V 7ns 8 ns 20V 8.7A Tc 27A 227 mJ 10V ±20V
    AUIRF2804 AUIRF2804 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 TO-220-3 No SVHC 12.88mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 13 ns 2V 300W Tc 195A SWITCHING 130 ns SILICON N-Channel 2.3m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 195A Tc 540 mJ 10V ±20V
    IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 16 ns 75V 214W Tc 100A SWITCHING 40 ns SILICON N-Channel 3.4m Ω @ 100A, 10V 3.8V @ 155μA 8130pF @ 37.5V 117nC @ 10V 85ns 10 ns 20V 100A Tc 400A 640 mJ 10V ±20V
    IRFR3708TR IRFR3708TR Infineon Technologies $0.00
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    		 Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 87W Tc SWITCHING 0.0125Ohm 30V SILICON N-Channel 12.5m Ω @ 15A, 10V 2V @ 250μA 2417pF @ 15V 24nC @ 4.5V 30A 61A Tc 30V 244A 213 mJ 2.8V 10V ±12V
    SPW20N60S5FKSA1 SPW20N60S5FKSA1 Infineon Technologies $0.00
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    		 download Tube 2004 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant AVALANCHE RATED TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 208W Tc SWITCHING 0.19Ohm 600V SILICON N-Channel 190m Ω @ 13A, 10V 5.5V @ 1mA 3000pF @ 25V 103nC @ 10V 20A 20A Tc 600V 40A 690 mJ 10V ±20V
    SPP07N60S5 SPP07N60S5 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2004 CoolMOS™ yes Obsolete 1 (Unlimited) 3 10.36mm RoHS Compliant Contains Lead 7.3A 3 AVALANCHE RATED TO-220-3 No SVHC 9.45mm 4.57mm Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Not Halogen Free Single 83W 120 ns 4.5V 600V 83W Tc 7.3A 0.6Ohm 170 ns SILICON N-Channel 600m Ω @ 4.6A, 10V 5.5V @ 350μA 970pF @ 25V 35nC @ 10V 40ns 20 ns 20V 600V 7.3A Tc 14.6A 10V ±20V
    BTS282Z E3180A BTS282Z E3180A Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2001 TEMPFET® Obsolete 1 (Unlimited) TO-263-8, D2Pak (7 Leads + Tab), TO-263CA compliant Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 6.5m Ω @ 36A, 10V 2V @ 240μA 4800pF @ 25V 232nC @ 10V Temperature Sensing Diode 80A Tc 49V 4.5V 10V ±20V
    SPW12N50C3FKSA1 SPW12N50C3FKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AD 125W 10 ns 500V 125W Tc 11.6A 0.38Ohm 45 ns SILICON N-Channel 380m Ω @ 7A, 10V 3.9V @ 500μA 1200pF @ 25V 49nC @ 10V 8ns 8 ns 20V 11.6A Tc 560V 34.8A 340 mJ 10V ±20V
    BSO303SPNTMA1 BSO303SPNTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2002 OptiMOS™ Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant AVALANCHE RATED,LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE 2.35W Ta SWITCHING 0.021Ohm 30V SILICON P-Channel 21m Ω @ 8.9A, 10V 2V @ 100μA 1754pF @ 25V 69nC @ 10V 8.9A 8.9A Ta 30V 35.6A 97 mJ 4.5V 10V ±20V
    SPD30P06P SPD30P06P Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2002 SIPMOS® Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Contains Lead -30A AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 20 4 R-PSSO-G2 Other Transistors Not Qualified 1 DRAIN Single 125W 125W Tc 30A 0.075Ohm 30 ns SILICON P-Channel 75m Ω @ 21.5A, 10V 4V @ 1.7mA 1535pF @ 25V 48nC @ 10V 11ns 20 ns 20V -60V 30A Tc 60V 120A 250 mJ 10V ±20V
    SPD06N80C3BTMA1 SPD06N80C3BTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2008 CoolMOS™ yes Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 260 40 3 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 83W 25 ns 800V 83W Tc 6A SWITCHING 0.9Ohm 72 ns SILICON N-Channel 900m Ω @ 3.8A, 10V 3.9V @ 250μA 785pF @ 100V 41nC @ 10V 15ns 8 ns 20V 6A 6A Ta 230 mJ 10V ±20V