Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Operating Temperature | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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AUIRF1404S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 17 ns | 2V | 3.8W Ta 200W Tc | 75A | SWITCHING | 0.004Ohm | 72 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 4V @ 250μA | 7360pF @ 25V | 200nC @ 10V | 140ns | 26 ns | 20V | 40V | 2 V | 75A Tc | 650A | 10V | ±20V | ||||||||||||||||||||||||
AUIRFR2407 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 16 ns | 2V | 110W Tc | 42A | SWITCHING | 0.026Ohm | 65 ns | SILICON | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 90ns | 66 ns | 20V | 75V | 42A Tc | 10V | ±20V | |||||||||||||||||||||||||
AUIRFR4615 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 144W | 15 ns | 3V | 144W Tc | 33A | SWITCHING | 0.042Ohm | 25 ns | SILICON | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 33A Tc | 10V | ±20V | |||||||||||||||||||||||||
AUIRFR4620 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 144W | 13.4 ns | 3V | 144W Tc | 24A | SWITCHING | 0.078Ohm | 25.4 ns | SILICON | N-Channel | 78m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 24A Tc | 10V | ±20V | |||||||||||||||||||||||||
AUIRFS3806 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W | 6.3 ns | 2V | 71W Tc | 43A | SWITCHING | 49 ns | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 40ns | 47 ns | 20V | 60V | 43A Tc | 10V | ±20V | |||||||||||||||||||||||||||
AUIRFS3607 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 16 ns | 2V | 140W Tc | 80A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 75V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||
AUIRFS3107-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 7 | ULTRA LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | R-PSSO-G6 | 1 | TO-263CB | DRAIN | Single | 370W | 17 ns | 370W Tc | 240A | SWITCHING | 0.0026Ohm | 100 ns | SILICON | N-Channel | 2.6m Ω @ 160A, 10V | 4V @ 250μA | 9200pF @ 50V | 240nC @ 10V | 80ns | 64 ns | 20V | 75V | 240A Tc | 320 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRFS4410Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | IRFS4410 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 230W | 16 ns | 2V | 230W Tc | 97A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 58A, 10V | 4V @ 150μA | 4820pF @ 50V | 120nC @ 10V | 52ns | 57 ns | 20V | 100V | 2 V | 97A Tc | 242 mJ | 10V | ±20V | |||||||||||||||||||||||
AUIRFS3004-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2015 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 380W Tc | SWITCHING | 0.00125Ohm | 40V | SILICON | N-Channel | 1.25m Ω @ 195A, 10V | 4V @ 250μA | 9130pF @ 25V | 240nC @ 10V | 240A | 240A Tc | 40V | 1610A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRLS3034 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W | 65 ns | 375W Tc | 195A | SWITCHING | 97 ns | SILICON | N-Channel | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 10315pF @ 25V | 162nC @ 4.5V | 827ns | 355 ns | 20V | 40V | 195A Tc | 255 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
AUIRFS4010-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 7 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-7, D2Pak (6 Leads + Tab) | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 380W | 19 ns | 380W Tc | 190A | SWITCHING | 0.004Ohm | 100 ns | SILICON | N-Channel | 4m Ω @ 110A, 10V | 4V @ 250μA | 9830pF @ 50V | 230nC @ 10V | 56ns | 48 ns | 20V | 100V | 190A Tc | 330 mJ | 10V | ±20V | ||||||||||||||||||||||||||
AUIRLR3114Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 25 ns | 1V | 140W Tc | 42A | SWITCHING | 0.0065Ohm | 33 ns | SILICON | N-Channel | 4.9m Ω @ 42A, 10V | 2.5V @ 100μA | 3810pF @ 25V | 56nC @ 4.5V | 140ns | 50 ns | 16V | 40V | 42A Tc | 500A | 260 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||
AUIRFZ44N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tube | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 45W | 7.3 ns | 2V | 94W Tc | 49A | SWITCHING | 47 ns | SILICON | N-Channel | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 1470pF @ 25V | 63nC @ 10V | 69ns | 60 ns | 20V | 55V | 49A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRLR3110Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
26 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | AUIRLR3110Z | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 24 ns | 1V | 140W Tc | 42A | SWITCHING | 33 ns | SILICON | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 42A Tc | 250A | 4.5V 10V | ±16V | |||||||||||||||||||||||||
AUIRFR3504 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 11 ns | 2V | 140W Tc | 56A | SWITCHING | 0.0092Ohm | 36 ns | SILICON | N-Channel | 9.2m Ω @ 30A, 10V | 4V @ 250μA | 2150pF @ 25V | 71nC @ 10V | 53ns | 22 ns | 20V | 40V | 87A | 56A Tc | 480 mJ | 10V | ±20V | |||||||||||||||||||||||
AUIRLS4030 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | Automotive, AEC-Q101, HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 370W | 74 ns | 370W Tc | 180A | SWITCHING | 110 ns | SILICON | N-Channel | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 11360pF @ 50V | 130nC @ 4.5V | 330ns | 170 ns | 16V | 100V | 180A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
AUIRLS3036-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | TO-263CB | DRAIN | Single | 380W | 81 ns | 1V | 380W Tc | 240A | SWITCHING | 89 ns | SILICON | N-Channel | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 11270pF @ 50V | 160nC @ 4.5V | 540ns | 170 ns | 16V | 60V | 240A Tc | 300 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||
AUIRLR2908 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6.73mm | RoHS Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 120W | 12 ns | 120W Tc | 30A | 36 ns | N-Channel | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 1890pF @ 25V | 33nC @ 4.5V | 95ns | 55 ns | 16V | 80V | 30A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
AUIRLS3034-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 380W Tc | SWITCHING | 0.0014Ohm | 40V | SILICON | N-Channel | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 10990pF @ 40V | 180nC @ 4.5V | 240A | 240A Tc | 40V | 1540A | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFR812PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.39mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | Single | 78W | 14 ns | 3V | 78W Tc | 110 ns | 3.6A | 24 ns | N-Channel | 2.2 Ω @ 2.2A, 10V | 5V @ 250μA | 810pF @ 25V | 20nC @ 10V | 22ns | 17 ns | 20V | 500V | 3.6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSO303SPHXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 1.56W | -30V | 1.56W Ta | 7.2A | SILICON | P-Channel | 21m Ω @ 9.1A, 10V | 2V @ 100μA | 2330pF @ 25V | 54nC @ 10V | 11ns | 20V | 7.2A Ta | 30V | 36A | 97 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRLH7134TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 21 ns | 3.6W Ta 104W Tc | 26A | SWITCHING | 0.0033Ohm | 40V | 18 ns | SILICON | N-Channel | 3.3m Ω @ 50A, 10V | 2.5V @ 100μA | 3720pF @ 25V | 58nC @ 4.5V | 75ns | 13 ns | 16V | 26A Ta 85A Tc | 40V | 640A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
IRFR825PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2012 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | Single | 119W | 8.5 ns | 3V | 119W Tc | 138 ns | 6A | 30 ns | N-Channel | 1.3 Ω @ 3.7A, 10V | 5V @ 250μA | 1346pF @ 25V | 34nC @ 10V | 25ns | 20 ns | 20V | 500V | 6A | 6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPD65R380E6BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 83W Tc | SWITCHING | 0.38Ohm | 650V | SILICON | N-Channel | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 710pF @ 100V | 39nC @ 10V | 10.6A Tc | 650V | 29A | 215 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSL373SNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 100V | 2W Ta | 2A | 0.23Ohm | SILICON | N-Channel | 230m Ω @ 2A, 10V | 4V @ 218μA | 265pF @ 25V | 9.3nC @ 10V | 2A | 2A Ta | 21 pF | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSL716SNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 75V | 2W Ta | 2.5A | 0.15Ohm | SILICON | N-Channel | 150m Ω @ 2.5A, 10V | 1.8V @ 218μA | 315pF @ 25V | 13.1nC @ 10V | 2.5A Ta | 10A | 33 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPP120P04P404AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2011 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.36mm | RoHS Compliant | Contains Lead | 3 | TO-220-3 | 15.95mm | 4.57mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | TO-220AB | DRAIN | Halogen Free | Single | 30 ns | -40V | 136W Tc | 120A | 49 ns | SILICON | P-Channel | 3.8m Ω @ 100A, 10V | 4V @ 340μA | 14790pF @ 25V | 205nC @ 10V | 20ns | 52 ns | 20V | 120A Tc | 40V | 480A | 78 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IPP80P04P4L08AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2011 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | 1 (Unlimited) | EAR99 | 10mm | RoHS Compliant | Contains Lead | 3 | TO-220-3 | 15.65mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | Single | 12 ns | -40V | 75W Tc | 80A | 42 ns | P-Channel | 8.2m Ω @ 80A, 10V | 2.2V @ 120μA | 5430pF @ 25V | 92nC @ 10V | 11ns | 35 ns | 16V | 80A Tc | 40V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||
IPD50N06S4L12ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | OptiMOS™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 50W Tc | 0.012Ohm | 60V | SILICON | N-Channel | 12m Ω @ 50A, 10V | 2.2V @ 20μA | 2890pF @ 25V | 40nC @ 10V | 50A | 50A Tc | 60V | 200A | 33 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IPB160N04S2L03ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, OptiMOS™ | yes | Discontinued | 1 (Unlimited) | 6 | ROHS3 Compliant | 7 | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 20 ns | 40V | 300W Tc | 160A | 75 ns | SILICON | N-Channel | 2.7m Ω @ 80A, 10V | 2V @ 250μA | 6000pF @ 15V | 230nC @ 5V | 51ns | 30 ns | 20V | 40V | 160A Tc | 640A | 810 mJ | 4.5V 10V | ±20V |
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