Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRFS4610PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | 10.668mm | RoHS Compliant | Lead Free | 73A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 14mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | DRAIN | Single | 190W | 18 ns | 190W Tc | 53 ns | 73A | SWITCHING | 53 ns | SILICON | N-Channel | 14m Ω @ 44A, 10V | 4V @ 100μA | 3550pF @ 50V | 140nC @ 10V | 87ns | 70 ns | 20V | 100V | 100V | 4 V | 73A Tc | 290A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF7495PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.022Ohm | 100V | SILICON | N-Channel | 22m Ω @ 4.4A, 10V | 4V @ 250μA | 1530pF @ 25V | 51nC @ 10V | 7.3A | 7.3A Ta | 100V | 58A | 180 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF1010ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 7.5mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 18 ns | 4V | 140W Tc | 33 ns | 75A | SWITCHING | 36 ns | SILICON | N-Channel | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 2840pF @ 25V | 95nC @ 10V | 150ns | 92 ns | 20V | 55V | 55V | 4 V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
IRF3704ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.67mm | RoHS Compliant | Lead Free | 67A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 7.9MOhm | Surface Mount | -55°C~175°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 57W | 8.9 ns | 57W Tc | 17 ns | 67A | SWITCHING | 11 ns | SILICON | N-Channel | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 1220pF @ 10V | 13nC @ 4.5V | 38ns | 4.2 ns | 20V | 20V | 2.1 V | 42A | 67A Tc | 260A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRF4905SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252 | DRAIN | 170W Tc | SWITCHING | 0.02Ohm | 55V | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 42A | 42A Tc | 55V | 280A | 140 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF7853PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 18MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 2.5W | 13 ns | 4.9V | 2.5W Ta | 68 ns | 8.3A | 26 ns | N-Channel | 18m Ω @ 8.3A, 10V | 4.9V @ 100μA | 1640pF @ 25V | 39nC @ 10V | 6.6ns | 6 ns | 20V | 100V | 100V | 4.9 V | 8.3A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRLR3110ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 14MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 140mW | 24 ns | 2.5V | 140W Tc | 51 ns | 42A | 33 ns | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 100V | 2.5 V | 42A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IRF7425PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.0082Ohm | 20V | SILICON | P-Channel | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 15A | 15A Ta | 20V | 60A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
IRF5210SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W Ta 170W Tc | SWITCHING | 0.06Ohm | 100V | SILICON | P-Channel | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 38A | 38A Tc | 100V | 140A | 120 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFS4227PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -40°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 330W | 33 ns | 5V | 330W Tc | 150 ns | 62A | SWITCHING | 0.026Ohm | 21 ns | SILICON | N-Channel | 26m Ω @ 46A, 10V | 5V @ 250μA | 4600pF @ 25V | 98nC @ 10V | 20ns | 31 ns | 30V | 200V | 240V | 5 V | 62A Tc | 260A | 10V | ±30V | |||||||||||||||||||||||||||||||
IPP16CN10LGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | LOGIC LEVEL COMPATIBLE | TO-220-3 | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | SINGLE | 260 | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 100W | 100W Tc | 54A | SWITCHING | SILICON | N-Channel | 15.7m Ω @ 54A, 10V | 2.4V @ 61μA | 4190pF @ 50V | 44nC @ 10V | 20V | 54A Tc | 100V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPP80N04S306AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | ULTRA LOW RESISTANCE | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 100W Tc | 0.0057Ohm | 40V | SILICON | N-Channel | 5.7m Ω @ 80A, 10V | 4V @ 52μA | 3250pF @ 25V | 47nC @ 10V | 80A | 80A Tc | 40V | 320A | 125 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IPP100N04S2L03AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.36mm | RoHS Compliant | 3 | AVALANCHE RATED | TO-220-3 | 15.95mm | 4.57mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | TO-220AB | Halogen Free | Single | 300W | 19 ns | 40V | 300W Tc | 100A | 77 ns | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 2V @ 250μA | 6000pF @ 25V | 230nC @ 10V | 51ns | 27 ns | 20V | 40V | 100A Tc | 400A | 810 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPP80N04S2L03AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 19 ns | 40V | 300W Tc | 80A | 77 ns | SILICON | N-Channel | 3.4m Ω @ 80A, 10V | 2V @ 250μA | 6000pF @ 25V | 213nC @ 10V | 50ns | 27 ns | 20V | 80A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SPD30N03S2L10GBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2002 | OptiMOS™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W | 6.1 ns | 100W Tc | 30A | 30V | 27 ns | SILICON | N-Channel | 10m Ω @ 30A, 10V | 2V @ 50μA | 1550pF @ 25V | 41.8nC @ 10V | 13ns | 17 ns | 20V | 30A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPP80N06S2L-07 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2003 | OptiMOS™ | yes | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | TIN | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 210W Tc | 0.01Ohm | 55V | SILICON | N-Channel | 7m Ω @ 60A, 10V | 2V @ 150μA | 3160pF @ 25V | 130nC @ 10V | 80A | 80A Tc | 55V | 320A | 450 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPP100N06S205AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 300W | 21 ns | 300W Tc | 100A | 0.005Ohm | 55V | SILICON | N-Channel | 5m Ω @ 80A, 10V | 4V @ 250μA | 5110pF @ 25V | 170nC @ 10V | 31ns | 20V | 100A Tc | 55V | 400A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SPI15N65C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | Obsolete | 1 (Unlimited) | 150°C | -55°C | 10.2mm | RoHS Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.45mm | 4.5mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | Single | 156W | 32 ns | 650V | 280mOhm | PG-TO262-3-1 | 156W Tc | 15A | 70 ns | N-Channel | 280mOhm @ 9.4A, 10V | 3.9V @ 675μA | 1600pF @ 25V | 63nC @ 10V | 14ns | 11 ns | 20V | 650V | 3 V | 15A Tc | 650V | 1.6nF | 10V | ±20V | 280 mΩ | ||||||||||||||||||||||||||||||||||||||||||
IPW90R1K0C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 89W | 70 ns | 900V | 89W Tc | 5.7A | SWITCHING | 1Ohm | 400 ns | SILICON | N-Channel | 1 Ω @ 3.3A, 10V | 3.5V @ 370μA | 850pF @ 100V | 34nC @ 10V | 20ns | 35 ns | 20V | 5.7A Tc | 12A | 97 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPW50R299CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 104W Tc | SWITCHING | 0.299Ohm | 500V | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 12A | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF540ZSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 92W Tc | SWITCHING | 0.0265Ohm | 100V | SILICON | N-Channel | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 1770pF @ 25V | 63nC @ 10V | 36A | 36A Tc | 100V | 140A | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPP80N06S2L06AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10mm | RoHS Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | 15.65mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | TO-220AB | Halogen Free | Single | 250W | 11 ns | 55V | 250W Tc | 80A | 0.0081Ohm | 60 ns | SILICON | N-Channel | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 3800pF @ 25V | 150nC @ 10V | 21ns | 20 ns | 20V | 55V | 80A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPP47N10SL26AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2001 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 175W Tc | 0.04Ohm | 100V | SILICON | N-Channel | 26m Ω @ 33A, 10V | 2V @ 2mA | 2500pF @ 25V | 135nC @ 10V | 47A | 47A Tc | 100V | 188A | 400 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPW50R350CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 89W Tc | SWITCHING | 0.35Ohm | 500V | SILICON | N-Channel | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 1020pF @ 100V | 25nC @ 10V | 10A | 10A Tc | 550V | 22A | 246 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPS50R520CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-251-3 Stub Leads, IPak | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | Single | 66W | 35 ns | 500V | 66W Tc | 7.1A | 0.52Ohm | 80 ns | SILICON | N-Channel | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 680pF @ 100V | 17nC @ 10V | 14ns | 17 ns | 20V | 500V | 3 V | 7.1A Tc | 550V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SPS01N60C3 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 3 | AVALANCHE RATED | TO-251-3 Stub Leads, IPak | Unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | FET General Purpose Power | Not Qualified | 1 | TO-251AA | Single | 11W | 30 ns | 11W Tc | 800mA | 6Ohm | 55 ns | SILICON | N-Channel | 6 Ω @ 500mA, 10V | 3.9V @ 250μA | 100pF @ 25V | 5nC @ 10V | 25ns | 30 ns | 30V | 650V | 650V | 3 V | 0.8A | 800mA Tc | 1.6A | 20 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFS4115-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.572mm | 9.65mm | 11.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 18 ns | 5V | 380W Tc | 105A | SWITCHING | 37 ns | SILICON | N-Channel | 11.8m Ω @ 63A, 10V | 5V @ 250μA | 5320pF @ 50V | 110nC @ 10V | 50ns | 23 ns | 20V | 150V | 150V | 5 V | 105A Tc | 420A | 230 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IRFH3702TR2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 2.9972mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 939.8μm | 2.9972mm | 7.1MOhm | Surface Mount | MOSFET (Metal Oxide) | 2.8W | 1 | Single | 2.8W | 9.6 ns | 7.1mOhm | 8-PQFN (3x3) | 26 ns | 16A | 11 ns | N-Channel | 7.1mOhm @ 16A, 10V | 2.35V @ 25μA | 1510pF @ 15V | 14nC @ 4.5V | 15ns | 5.8 ns | 20V | 30V | 1.8 V | 16A Ta 42A Tc | 30V | 1.51nF | 7.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
IRFSL4115PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | 12.1MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 18 ns | 375W Tc | 99A | SWITCHING | 41 ns | SILICON | N-Channel | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 5270pF @ 50V | 120nC @ 10V | 73ns | 39 ns | 20V | 150V | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFS4020PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2007 | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 4.826mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 100W | 7.8 ns | 4.9V | 100W Tc | 120 ns | 18A | SWITCHING | 0.105Ohm | 16 ns | SILICON | N-Channel | 105m Ω @ 11A, 10V | 4.9V @ 100μA | 1200pF @ 50V | 29nC @ 10V | 12ns | 6.3 ns | 20V | 200V | 200V | 4.9 V | 18A Tc | 52A | 94 mJ | 10V | ±20V |
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