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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Transistor Type | Input Capacitance | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC 856B E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | BC856 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | PNP | 0.33W | SWITCHING | SILICON | PNP | 250MHz | 15nA ICBO | 65V | 100mA | 220 @ 2mA 5V | 650mV @ 5mA, 100mA | 250MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC 817-40 E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | DUAL | GULL WING | 260 | 40 | BC817 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | NPN | 0.33W | SILICON | NPN | 170MHz | 100nA ICBO | 45V | 500mA | 250 @ 100mA 1V | 700mV @ 50mA, 500mA | 170MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN50R1K4CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | SOT-223-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 4.8A | N-Channel | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 178pF @ 100V | 8.2nC @ 10V | 4.8A Tc | 500V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R280C6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 104W | 13 ns | 600V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 100 ns | SILICON | N-Channel | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 950pF @ 100V | 43nC @ 10V | 11ns | 12 ns | 20V | 13.8A Tc | 40A | 284 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS316NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Not Qualified | 1 | Halogen Free | Single | 500mW | 3.4 ns | 1.6V | 30V | 500mW Ta | 1.4A | 5.8 ns | SILICON | N-Channel | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 94pF @ 15V | 0.6nC @ 5V | 2.3ns | 1 ns | 20V | 30V | 1.4A Ta | 7 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSS223PWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Contains Lead | -390mA | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | SC-70, SOT-323 | No SVHC | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Halogen Free | Single | 3.8 ns | -900mV | -20V | 250mW Ta | 390mA | 5.1 ns | SILICON | P-Channel | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 56pF @ 15V | 0.62nC @ 4.5V | 5ns | 12V | 390mA Ta | 20V | 22 pF | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFTS9342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 | No SVHC | 40MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2W | 4.6 ns | -1.3V | 2W Ta | 30 ns | 5.8A | SWITCHING | 45 ns | SILICON | P-Channel | 40m Ω @ 5.8A, 10V | 2.4V @ 25μA | 595pF @ 25V | 12nC @ 10V | 13ns | 28 ns | 20V | -30V | 5.8A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5801TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 2.9972mm | ROHS3 Compliant | Contains Lead | 600mA | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 990.6μm | 1.7mm | 2.2Ohm | Surface Mount | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2W | 6.5 ns | 5.5V | 2W Ta | 600mA | SWITCHING | 8.8 ns | SILICON | N-Channel | 2.2 Ω @ 360mA, 10V | 5.5V @ 250μA | 88pF @ 25V | 3.9nC @ 10V | 8ns | 19 ns | 30V | 200V | 200V | 5.5 V | 600mA Ta | 4.8A | 9.9 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R299CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 104W | 35 ns | 500V | 104W Tc | 12A | SWITCHING | 0.299Ohm | 80 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 14ns | 12 ns | 20V | 500V | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405ZLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 10.668mm | RoHS Compliant | Lead Free | 75A | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | 4.9MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | 1 | 230W | 18 ns | 230W Tc | 75A | 48 ns | N-Channel | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 4780pF @ 25V | 180nC @ 10V | 110ns | 82 ns | 20V | 55V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3808PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 140A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.826mm | 7Ohm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 330W | 16 ns | 4V | 330W Tc | 140A | SWITCHING | 68 ns | SILICON | N-Channel | 7m Ω @ 82A, 10V | 4V @ 250μA | 5310pF @ 25V | 220nC @ 10V | 140ns | 120 ns | 20V | 75V | 75V | 4 V | 75A | 140A Tc | 550A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4410ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRFS4410 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 230W | 230W Tc | 97A | SWITCHING | SILICON | N-Channel | 9m Ω @ 58A, 10V | 4V @ 150μA | 4820pF @ 50V | 120nC @ 10V | 52ns | 57 ns | 100V | 97A Tc | 242 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R190C7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 11 ns | 650V | 168mOhm | PG-TO252-3 | 72W Tc | 13A | 54 ns | N-Channel | 190mOhm @ 5.7A, 10V | 4V @ 290μA | 1150pF @ 400V | 23nC @ 10V | 9 ns | 20V | 13A Tc | 650V | 1.15nF | 10V | ±20V | 190 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N04S401ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 34 ns | 40V | 1.35mOhm | D2PAK (TO-263AB) | 188W Tc | 120A | 41 ns | N-Channel | 1.5mOhm @ 100A, 10V | 4V @ 140μA | 14000pF @ 25V | 176nC @ 10V | 16ns | 36 ns | 20V | 120A Tc | 40V | 14nF | 10V | ±20V | 1.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 1 | FET General Purpose Power | Single | 32 ns | 3.9V | 375W Tc | 195A | 160 ns | N-Channel | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 14240pF @ 25V | 460nC @ 10V | 105ns | 100 ns | 20V | 195A Tc | 40V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3207TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 180A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 4.5MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 29 ns | 4V | 300W Tc | 180A | SWITCHING | 68 ns | SILICON | N-Channel | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 7600pF @ 50V | 260nC @ 10V | 120ns | 74 ns | 20V | 75V | 4 V | 75A | 170A Tc | 720A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSB165N15NZ3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | 7 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | R-MBCC-N3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 10 ns | 3V | 2.8W Ta 78W Tc | 9A | SWITCHING | 17 ns | SILICON | N-Channel | 16.5m Ω @ 30A, 10V | 4V @ 110μA | 2800pF @ 75V | 35nC @ 10V | 7 ns | 20V | 9A | 9A Ta 45A Tc | 150V | 440 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N04S4H0ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 0.0011Ohm | 40V | SILICON | N-Channel | 1.1m Ω @ 100A, 10V | 4V @ 180μA | 17940pF @ 25V | 225nC @ 10V | 180A | 180A Tc | 40V | 720A | 850 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUT200N08S5N023ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Tape & Reel (TR) | OptiMOS™-5 | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerSFN | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 200W Tc | N-Channel | 2.3m Ω @ 100A, 10V | 3.8V @ 130μA | 7670pF @ 40V | 110nC @ 10V | 200A Tc | 80V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL40SC228 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 416W Tc | N-Channel | 0.65m Ω @ 100A, 10V | 2.4V @ 250μA | 19680pF @ 25V | 307nC @ 4.5V | 557A Tc | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7749L1TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Lead Free | No | 15 | DirectFET™ Isometric L8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | 3.3W | 17 ns | 1.1mOhm | DIRECTFET L8 | 3.3W Ta 125W Tc | 200A | 78 ns | N-Channel | 1.5mOhm @ 120A, 10V | 4V @ 250μA | 12320pF @ 25V | 300nC @ 10V | 43ns | 39 ns | 20V | 60V | 33A Ta 200A Tc | 60V | 12.32nF | 10V | ±20V | 1.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N12S305ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2017 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-263AB | DRAIN | 300W Tc | 0.0048Ohm | 120V | SILICON | N-Channel | 5.1m Ω @ 100A, 10V | 4V @ 240μA | 11570pF @ 25V | 185nC @ 10V | 100A | 100A Tc | 120V | 400A | 1445 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC084P03NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 16 ns | -30V | 2.5W Ta 69W Tc | 14.5A | SWITCHING | 33 ns | SILICON | P-Channel | 8.4m Ω @ 50A, 10V | 3.1V @ 105μA | 4785pF @ 15V | 58nC @ 10V | 134ns | 8 ns | 25V | 14.9A Ta 78.6A Tc | 30V | 200A | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R500CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Cut Tape (CT) | 2013 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | 57W Tc | SWITCHING | 0.5Ohm | 500V | SILICON | N-Channel | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 433pF @ 100V | 18.7nC @ 10V | Super Junction | 7.6A Tc | 500V | 24A | 129 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC12DN20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 6 ns | 200V | 50W Tc | 11.3A | SWITCHING | 0.125Ohm | 10 ns | SILICON | N-Channel | 125m Ω @ 5.7A, 10V | 4V @ 25μA | 680pF @ 100V | 8.7nC @ 10V | 4ns | 3 ns | 20V | 11.3A Tc | 45A | 60 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N03S4L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 30V | 94W Tc | 90A | 37 ns | SILICON | N-Channel | 3.3m Ω @ 90A, 10V | 2.2V @ 45μA | 5100pF @ 25V | 75nC @ 10V | 6ns | 7 ns | 16V | 90A Tc | 85 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ028N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 2.1W Ta 63W Tc | 40A | SWITCHING | SILICON | N-Channel | 2.8m Ω @ 20A, 10V | 2300pF @ 20V | 32nC @ 10V | 4ns | 20V | 21A | 21A Ta 40A Tc | 160A | 100 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0901NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 5 ns | 30V | 2.1W Ta 69W Tc | 25A | SWITCHING | 27 ns | SILICON | N-Channel | 2.1m Ω @ 20A, 10V | 2.2V @ 250μA | 2600pF @ 15V | 41nC @ 10V | 7.2ns | 4.6 ns | 20V | Schottky Diode (Body) | 25A Ta 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ12DN20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 6 ns | 200V | 50W Tc | 11.3A | SWITCHING | 0.125Ohm | 10 ns | SILICON | N-Channel | 125m Ω @ 5.7A, 10V | 4V @ 25μA | 680pF @ 100V | 8.7nC @ 10V | 4ns | 3 ns | 20V | 11.3A Tc | 45A | 60 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ035N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-N8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W Ta 69W Tc | SWITCHING | 0.0057Ohm | 30V | SILICON | N-Channel | 3.5m Ω @ 20A, 10V | 2.2V @ 250μA | 4400pF @ 15V | 56nC @ 10V | 40A | 20A Ta 40A Tc | 30V | 160A | 150 mJ | 4.5V 10V | ±20V |