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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Turn On Delay Time | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Power Dissipation Ambient-Max | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXSH30N60B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2004 | yes | Obsolete | Not Applicable | 3 | 16.26mm | RoHS Compliant | Lead Free | 48A | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*30N60 | 3 | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 250W | 30 ns | 30 ns | 48A | 600V | 600V | POWER CONTROL | 130 ns | SILICON | 30ns | 2V | 80 ns | 2.5V @ 15V, 24A | 436 ns | PT | 400V, 24A, 5 Ω, 15V | 50nC | 90A | 30ns/130ns | 550μJ (off) | ||||||||||||||||||||||||||||
| IXXX300N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 8541.90.00.00 | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | Insulated Gate BIP Transistors | 2.3kW | 2300W | 1 | COLLECTOR | N-CHANNEL | Single | 2.3kW | 550A | 600V | 1.6V | POWER CONTROL | SILICON | 1.3V | 137 ns | 1.6V @ 15V, 100A | 430 ns | PT | 20V | 5.5V | 400V, 100A, 1 Ω, 15V | 460nC | 1140A | 50ns/190ns | 3.45mJ (on), 2.86mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGK75N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 780W | 1 | COLLECTOR | N-CHANNEL | Single | 780W | 170A | 2.5kV | 2.5kV | POWER CONTROL | SILICON | 9nF | 2.7V | 305 ns | 3.6V @ 15V, 150A | 420 ns | NPT | 20V | 2500V | 5V | 410nC | 530A | ||||||||||||||||||||||||||||||||||||||||
| IXBX50N360HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2016 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 Variant | unknown | Through Hole | -55°C~150°C TJ | Standard | 660W | 660W | 1.7 μs | 125A | 3.6kV | 2.9V | 2.9V @ 15V, 50A | 3600V | 960V, 50A, 5 Ω, 15V | 210nC | 420A | 46ns/205ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYX40N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | Standard | 1500W | 4V @ 15V, 40A | 2500V | 70A | 1250V, 40A, 1 Ω, 15V | 270nC | 380A | 21ns/200ns | 11.7mJ (on), 6.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH32N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 400W | 400W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.5 μs | 80A | 3kV | 3.2V | POWER CONTROL | SILICON | 573 ns | 3.2V @ 15V, 32A | 795 ns | 20V | 3000V | 5V | 142nC | 280A | |||||||||||||||||||||||||||||||||||||
| IXBH16N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Bulk | 2008 | BIMOSFET™ | yes | Active | Not Applicable | 3 | ROHS3 Compliant | Lead Free | 16A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 1.7kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 250W | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 150W | 15 ns | 1.32 μs | 40A | 1.7kV | 1.7kV | POWER CONTROL | 160 ns | SILICON | 25ns | 220 ns | 3.3V @ 15V, 16A | 940 ns | 20V | 1700V | 5.5V | 72nC | 120A | ||||||||||||||||||||||||||||||||
| IXYH10N170CV1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 280W | 160ns | 3.8V @ 15V, 10A | 1700V | 36A | 850V, 10A, 10 Ω, 15V | 46nC | 84A | 14ns/130ns | 1.4mJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBK55N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 1.9 μs | 130A | 3kV | 3.2V | POWER CONTROL | SILICON | 637 ns | 3.2V @ 15V, 55A | 475 ns | 25V | 3000V | 5V | 335nC | 600A | |||||||||||||||||||||||||||||||||||||||
| IXYH50N120C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | 21.46mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 625W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 625W | 24 ns | 195ns | 90A | 1.2kV | 1.2kV | POWER CONTROL | 240 ns | SILICON | 4.2V | 82 ns | 4V @ 15V, 50A | 372 ns | 20V | 1200V | 5V | 600V, 50A, 5 Ω, 15V | 142nC | 210A | 28ns/133ns | 3mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||
| IXXX200N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 1 | SINGLE | COLLECTOR | N-CHANNEL | 1630W | 340A | 600V | 2.1V | POWER CONTROL | SILICON | 143 ns | 2.1V @ 15V, 100A | 240 ns | PT | 20V | 6V | 360V, 100A, 1 Ω, 15V | 315nC | 900A | 47ns/125ns | 3mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IXGH30N120B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*30N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 100ns | 150A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.96V | 56 ns | 3.5V @ 15V, 30A | 471 ns | PT | 20V | 1200V | 5V | 960V, 30A, 5 Ω, 15V | 87nC | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||||
| IXYT25N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~175°C TJ | Standard | 937W | 34ns | 4V @ 15V, 25A | 2500V | 95A | 1250V, 25A, 5 Ω, 15V | 147nC | 235A | 15ns/230ns | 8.3mJ (on), 7.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXX110N65B4H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | TO-247-3 | not_compliant | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 110N65 | Insulated Gate BIP Transistors | 880W | N-CHANNEL | Single | 880W | 26 ns | 100 ns | 240A | 650V | 2.1V | 146 ns | 1.75V | 2.1V @ 15V, 110A | PT | 20V | 6.5V | 400V, 55A, 2 Ω, 15V | 183nC | 630A | 38ns/156ns | 2.2mJ (on), 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IXGH16N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | IXG*16N170 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 190W | 1 | TO-268AA | COLLECTOR | N-CHANNEL | Single | 190W | 45 ns | 32A | 1.7kV | 1.7kV | POWER CONTROL | 200 ns | SILICON | 2.7V | 90 ns | 3.5V @ 15V, 16A | 1600 ns | NPT | 20V | 1700V | 5V | 1100ns | 1360V, 16A, 10 Ω, 15V | 78nC | 80A | 45ns/400ns | 9.3mJ (off) | |||||||||||||||||||||||||
| IXXX160N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 160N65 | Insulated Gate BIP Transistors | 940W | N-CHANNEL | Single | 940W | 310A | 650V | 1.8V | 1.54V | 1.8V @ 15V, 160A | PT | 20V | 6.5V | 400V, 80A, 1 Ω, 15V | 425nC | 860A | 52ns/220ns | 3.3mJ (on), 1.88mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH110N65C4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2015 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 110N65 | Insulated Gate BIP Transistors | 880W | N-CHANNEL | Single | 880W | 234A | 650V | 2.35V | 1.98V | 2.35V @ 15V, 110A | PT | 20V | 6.5V | 400V, 55A, 2 Ω, 15V | 180nC | 600A | 35ns/143ns | 2.3mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IXGM25N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | yes | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | HIGH SPEED | TO-204AE | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | BOTTOM | PIN/PEG | 260 | 35 | 2 | O-MBFM-P2 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | COLLECTOR | N-CHANNEL | 200W | Single | 200ns | 1kV | POWER CONTROL | SILICON | 200W | 350 ns | 4V @ 15V, 25A | 1520 ns | 20V | 4 V | 1000V | 50A | 5V | 800V, 25A, 33 Ω, 15V | 180nC | 100A | 100ns/500ns | 5mJ (off) | ||||||||||||||||||||||||||||||||||
| IXYX40N450HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2014 | XPT™ | Active | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | 660W | 3.9V @ 15V, 40A | 4500V | 95A | 960V, 40A, 2 Ω, 15V | 170nC | 350A | 36ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGQ96N30TBD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 5.500006g | Standard | 96A | 320V | Trench | 96A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH60N65C4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2014 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 455W | N-CHANNEL | Single | 455W | 118A | 650V | 2.2V | 1.8V | 2.2V @ 15V, 60A | PT | 20V | 6.5V | 400V, 60A, 5 Ω, 15V | 94nC | 240A | 37ns/133ns | 3.2mJ (on), 830μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH30N60B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 270W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 270W | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 1.66V | 57 ns | 1.85V @ 15V, 24A | 292 ns | PT | 20V | 5.5V | 400V, 24A, 10 Ω, 15V | 39nC | 115A | 23ns/97ns | 550μJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXGH10N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*10N170 | 3 | Insulated Gate BIP Transistors | Not Qualified | 110W | 110W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 45 ns | 20A | 1.7kV | 1.7kV | POWER CONTROL | 200 ns | SILICON | 300 ns | 4V @ 15V, 10A | 630 ns | NPT | 20V | 1700V | 5V | 32nC | 70A | ||||||||||||||||||||||||||||||||||
| IXGH17N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1997 | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | HIGH SPEED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*17N100 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 34A | 1kV | 4V | POWER CONTROL | SILICON | 300 ns | 4V @ 15V, 17A | 1450 ns | 20V | 4 V | 1000V | 5V | 800V, 17A, 82 Ω, 15V | 100nC | 68A | 100ns/500ns | 3mJ (off) | ||||||||||||||||||||||||||||||||||
| IXGH40N60A3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | R-PSFM-T3 | 150°C | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 75A | 600V | MOTOR CONTROL | SILICON | 48 ns | 1180 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH120N30C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*120N30 | 3 | Not Qualified | 540W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 540W | 75A | 300V | 300V | POWER CONTROL | SILICON | 1.75V | 66 ns | 2.1V @ 15V, 120A | 233 ns | PT | 200V, 60A, 2 Ω, 15V | 230nC | 600A | 28ns/109ns | 230μJ (on), 730μJ (off) | ||||||||||||||||||||||||||||||||||
| IXGH64N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 460W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 600V | 1.8V | POWER CONTROL | SILICON | 64 ns | 1.8V @ 15V, 50A | 326 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGH10N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2003 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*10N170 | 3 | Not Qualified | 140W | 140W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 46 ns | 10A | 1.7kV | 1.7kV | MOTOR CONTROL | 190 ns | SILICON | 107 ns | 6V @ 15V, 5A | 240 ns | NPT | 1700V | 850V, 10A, 22 Ω, 15V | 29nC | 20A | 46ns/190ns | 380μJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGH120N30B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*120N30 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | COLLECTOR | N-CHANNEL | Single | 540W | 75A | 300V | 300V | POWER CONTROL | SILICON | 1.42V | 41 ns | 1.7V @ 15V, 120A | 356 ns | PT | 20V | 5V | 225nC | 480A | ||||||||||||||||||||||||||||||||||||
| IXYP30N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 10.66mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 16mm | 4.83mm | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 416W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 500W | 23 ns | 75A | 1.2kV | 1.2kV | POWER CONTROL | 126 ns | SILICON | 3.7V | 71 ns | 3.3V @ 15V, 30A | 296 ns | 20V | 1200V | 5V | 600V, 30A, 10 Ω, 15V | 69nC | 145A | 19ns/130ns | 2.6mJ (on), 1.1mJ (off) |