Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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IXSH30N60CD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2000 | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 55A | 3 | HIGH SPEED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | IXS*30N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 30 ns | 50ns | 55A | 600V | 600V | MOTOR CONTROL | 90 ns | SILICON | 30ns | 70 ns | 2.5V @ 15V, 30A | 290 ns | 20V | 7V | 270ns | 480V, 30A, 4.7 Ω, 15V | 100nC | 110A | 30ns/90ns | 700μJ (off) | |||||||||||||||||||||||||||||
IXGH32N60CD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2002 | HiPerFAST™, Lightspeed™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Contains Lead | 60A | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*32N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 20ns | 50 ns | 2.5V @ 15V, 32A | 210 ns | 20V | 5V | 480V, 32A, 4.7 Ω, 15V | 110nC | 120A | 25ns/85ns | 320μJ (off) | |||||||||||||||||||||||||||||||
IXXX300N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 2.3kW | 2300W | N-CHANNEL | 510A | 600V | 2V | 2V @ 15V, 100A | PT | 20V | 5.5V | 400V, 100A, 1 Ω, 15V | 438nC | 1075A | 50ns/160ns | 3.35mJ (on), 1.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
IXBK75N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2003 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXB*75N170 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.04kW | 1040W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 360 ns | 110A | 1.7kV | 6V | POWER CONTROL | SILICON | 65 ns | 6V @ 15V, 42A | 595 ns | 20V | 1700V | 5.5V | 110ns | 1360V, 42A, 1 Ω, 15V | 358nC | 300A | 26ns/418ns | 3.8mJ (off) | |||||||||||||||||||||||||||||
IXBF32N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | i4-Pac™-5 (3 Leads) | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 160W | 160W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1.5 μs | 40A | 3kV | 3.2V | POWER CONTROL | SILICON | 573 ns | 3.2V @ 15V, 32A | 795 ns | 3000V | 142nC | 250A | ||||||||||||||||||||||||||||||||||||
IXXX300N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 8541.90.00.00 | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | Insulated Gate BIP Transistors | 2.3kW | 2300W | 1 | COLLECTOR | N-CHANNEL | Single | 2.3kW | 550A | 600V | 1.6V | POWER CONTROL | SILICON | 1.3V | 137 ns | 1.6V @ 15V, 100A | 430 ns | PT | 20V | 5.5V | 400V, 100A, 1 Ω, 15V | 460nC | 1140A | 50ns/190ns | 3.45mJ (on), 2.86mJ (off) | |||||||||||||||||||||||||||||||||
IXGK75N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 780W | 1 | COLLECTOR | N-CHANNEL | Single | 780W | 170A | 2.5kV | 2.5kV | POWER CONTROL | SILICON | 9nF | 2.7V | 305 ns | 3.6V @ 15V, 150A | 420 ns | NPT | 20V | 2500V | 5V | 410nC | 530A | |||||||||||||||||||||||||||||||||||||
IXBX50N360HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2016 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 Variant | unknown | Through Hole | -55°C~150°C TJ | Standard | 660W | 660W | 1.7 μs | 125A | 3.6kV | 2.9V | 2.9V @ 15V, 50A | 3600V | 960V, 50A, 5 Ω, 15V | 210nC | 420A | 46ns/205ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX40N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | Standard | 1500W | 4V @ 15V, 40A | 2500V | 70A | 1250V, 40A, 1 Ω, 15V | 270nC | 380A | 21ns/200ns | 11.7mJ (on), 6.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBH32N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 400W | 400W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.5 μs | 80A | 3kV | 3.2V | POWER CONTROL | SILICON | 573 ns | 3.2V @ 15V, 32A | 795 ns | 20V | 3000V | 5V | 142nC | 280A | ||||||||||||||||||||||||||||||||||
IXBH16N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Bulk | 2008 | BIMOSFET™ | yes | Active | Not Applicable | 3 | ROHS3 Compliant | Lead Free | 16A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 1.7kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 250W | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 150W | 15 ns | 1.32 μs | 40A | 1.7kV | 1.7kV | POWER CONTROL | 160 ns | SILICON | 25ns | 220 ns | 3.3V @ 15V, 16A | 940 ns | 20V | 1700V | 5.5V | 72nC | 120A | |||||||||||||||||||||||||||||
IXYH10N170CV1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 280W | 160ns | 3.8V @ 15V, 10A | 1700V | 36A | 850V, 10A, 10 Ω, 15V | 46nC | 84A | 14ns/130ns | 1.4mJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBK55N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 1.9 μs | 130A | 3kV | 3.2V | POWER CONTROL | SILICON | 637 ns | 3.2V @ 15V, 55A | 475 ns | 25V | 3000V | 5V | 335nC | 600A | ||||||||||||||||||||||||||||||||||||
IXYX50N170C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Tube | 2017 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 1500W | 44ns | 3.7V @ 15V, 50A | 1700V | 178A | 850V, 50A, 1 Ω, 15V | 260nC | 460A | 20ns/180ns | 8.7mJ (on), 5.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXK300N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 2.3kW | 2300W | N-CHANNEL | 510A | 600V | 2V | 2V @ 15V, 100A | PT | 20V | 5.5V | 400V, 100A, 1 Ω, 15V | 438nC | 1075A | 50ns/160ns | 3.35mJ (on), 1.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX120N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™, GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1500W | 54ns | 2.2V @ 15V, 100A | 1200V | 320A | 960V, 100A, 1 Ω, 15V | 400nC | 800A | 30ns/340ns | 9.7mJ (on), 21.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGX120N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
24 Weeks | Through Hole | Tube | 2012 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 830W | 830W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 200A | 1.2kV | 3V | POWER CONTROL | SILICON | 122 ns | 3V @ 15V, 100A | 885 ns | PT | 20V | 1200V | 5V | 600V, 100A, 2 Ω, 15V | 470nC | 370A | 36ns/275ns | 5.5mJ (on), 5.8mJ (off) | ||||||||||||||||||||||||||||||||
IXGT4N250C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tube | 2011 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 13A | 2.5kV | 6V | POWER CONTROL | SILICON | 6V @ 15V, 4A | 471 ns | NPT | 20V | 2500V | 5V | 1250V, 4A, 20 Ω, 15V | 57nC | 46A | -/350ns | 360μJ (off) | |||||||||||||||||||||||||||||||||||
IXGX100N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 830W | 1 | COLLECTOR | N-CHANNEL | Single | 830W | 170A | 1.7kV | 3V | POWER CONTROL | SILICON | 2.5V | 285 ns | 3V @ 15V, 100A | 720 ns | NPT | 20V | 1700V | 5V | 425nC | 600A | ||||||||||||||||||||||||||||||||||||
IXBT20N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2012 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.35 μs | 50A | 3kV | 3.2V | POWER CONTROL | SILICON | 608 ns | 3.2V @ 15V, 20A | 695 ns | 20V | 3000V | 5V | 105nC | 140A | ||||||||||||||||||||||||||||||||
IXGH48N60C3C1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*48N60 | 3 | Insulated Gate BIP Transistors | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 2.5V | 47 ns | 2.5V @ 15V, 30A | 187 ns | PT | 20V | 5.5V | 400V, 30A, 3 Ω, 15V | 77nC | 250A | 19ns/60ns | 330μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||
MMIX1X340N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | 2014 | XPT™, GenX4™ | Active | 1 (Unlimited) | 24-PowerSMD, 21 Leads | Surface Mount | -55°C~175°C TJ | Standard | 1200W | 76ns | 1.7V @ 15V, 160A | 650V | 450A | 400V, 100A, 1 Ω, 15V | 553nC | 1200A | 62ns/245ns | 4.4mJ (on), 3.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMIX1G320N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | 2011 | GenX3™ | yes | Active | 21 | RoHS Compliant | LOW CONDUCTION LOSS | 24-PowerSMD, 21 Leads | Surface Mount | -55°C~150°C TJ | Standard | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G21 | Insulated Gate BIP Transistors | Not Qualified | 1000W | 1 | SINGLE | ISOLATED | N-CHANNEL | 1000W | 66ns | POWER CONTROL | SILICON | 107 ns | 1.5V @ 15V, 100A | 595 ns | PT | 20V | 600V | 400A | 5V | 480V, 100A, 1 Ω, 15V | 585nC | 1000A | 44ns/250ns | 2.7mJ (on), 5mJ (off) | ||||||||||||||||||||||||||||||||||||
MMIX1G120N120A3V1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2012 | GenX3™ | Active | 1 (Unlimited) | ROHS3 Compliant | 24-PowerSMD, 21 Leads | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 400W | 400W | N-CHANNEL | 700 ns | 220A | 1.2kV | 2.2V | 2.2V @ 15V, 100A | PT | 20V | 1200V | 5V | 960V, 100A, 1 Ω, 15V | 420nC | 700A | 40ns/490ns | 10mJ (on), 33mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
IXXN200N65A4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™, GenX4™ | Active | SOT-227-4, miniBLOC | compliant | Chassis Mount | -55°C~175°C TJ | Standard | 1250W | 160ns | 1.8V @ 15V, 200A | 650V | 440A | 400V, 100A, 1 Ω, 15V | 736nC | 1200A | 140ns/1.04μs | 8.8mJ (on), 6.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGF36N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | UL RECOGNIZED | i4-Pac™-5 (3 Leads) | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 160W | 160W | 1 | SINGLE | ISOLATED | N-CHANNEL | 36A | 3kV | 5.2V | GENERAL PURPOSE SWITCHING | SILICON | 221 ns | 5.2V @ 15V, 100A | 755 ns | 20V | 3000V | 5V | 136nC | 400A | ||||||||||||||||||||||||||||||||||||
IXGL75N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | UL RECOGNIZED, HIGH RELIABILITY | ISOPLUSi5-Pak™ | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 5 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 430W | 430W | 1 | SINGLE | ISOLATED | N-CHANNEL | 110A | 2.5kV | 2.9V | SILICON | 305 ns | 2.9V @ 15V, 75A | 420 ns | 20V | 2500V | 5V | 410nC | 580A | |||||||||||||||||||||||||||||||||||||||
IXBF42N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | BIMOSFET™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | i4-Pac™-4, Isolated | Through Hole | -55°C~150°C TJ | Standard | SINGLE | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 240W | 240W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 1.7 μs | 60A | 3kV | 3V | POWER CONTROL | SILICON | 652 ns | 3V @ 15V, 42A | 950 ns | 25V | 3000V | 5V | 1500V, 42A, 20 Ω, 15V | 200nC | 380A | 72ns/445ns | |||||||||||||||||||||||||||||||||||||||
IXBH9N160G | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2006 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 100W | 100W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 9A | 1.6kV | 1.6kV | POWER CONTROL | SILICON | 4.9V | 340 ns | 7V @ 15V, 5A | 190 ns | 1600V | 960V, 5A, 27 Ω, 10V | 34nC | 10A | ||||||||||||||||||||||||||||||||||||||
IXGH32N60B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2000 | HiPerFAST™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 60A | No | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | IXG*32N60 | 3 | Insulated Gate BIP Transistors | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25 ns | 60A | 600V | 600V | MOTOR CONTROL | 100 ns | SILICON | 20ns | 50 ns | 2.5V @ 15V, 32A | 240 ns | 20V | 2.5 V | 5V | 150ns | 480V, 32A, 4.7 Ω, 15V | 125nC | 120A | 25ns/100ns | 800μJ (off) |
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