Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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SIS412DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.17mm | 3.05mm | 24MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 15.6W | 5 ns | 1V | 3.2W Ta 15.6W Tc | 8.7A | 150°C | SWITCHING | 15 ns | SILICON | N-Channel | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 435pF @ 15V | 12nC @ 10V | 12ns | 10 ns | 20V | 30V | 1 V | 12A Tc | 30A | 4.5V 10V | ±20V | ||||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | MO-193AA | 5W Tc | 0.058Ohm | 40V | SILICON | P-Channel | 58m Ω @ 2.5A, 10V | 2.5V @ 250μA | 990pF @ 20V | 11.3nC @ 4.5V | 6.9A | 6.9A Tc | 40V | 100 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
SI2316BDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.02mm | 1.4mm | 50MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 20 ns | 3V | 1.25W Ta 1.66W Tc | 4.5A | SWITCHING | 11 ns | SILICON | N-Channel | 50m Ω @ 3.9A, 10V | 3V @ 250μA | 350pF @ 15V | 9.6nC @ 10V | 65ns | 65 ns | 20V | 30V | 4.5A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||
SI3443BDV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 990.6μm | 1.65mm | 60mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 1.1W | 22 ns | -1.4V | 1.1W Ta | 3.6A | 45 ns | SILICON | P-Channel | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 9nC @ 4.5V | 35ns | 25 ns | 12V | -20V | -1.4 V | 3.6A Ta | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||
SI1013X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.7mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | SC-89, SOT-490 | Unknown | 800μm | 950μm | 1.2Ohm | Surface Mount | 29.993795mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 250mW | 5 ns | -450mV | 250mW Ta | -400mA | SWITCHING | 35 ns | SILICON | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 1.5nC @ 4.5V | 9ns | 9 ns | 6V | -20V | 350mA Ta | 20V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||
SI1031R-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.58mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOW THRESHOLD | SC-75A | No SVHC | 700μm | 760μm | 8Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 250mW | 55 ns | 900mV | 250mW Ta | 140mA | SWITCHING | 20V | 60 ns | SILICON | P-Channel | 8 Ω @ 150mA, 4.5V | 1.2V @ 250μA | 1.5nC @ 4.5V | 30ns | 30 ns | 6V | 140mA Ta | 20V | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||
SQ1421EDH-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Digi-Reel® | 2015 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | 6 | 6-TSSOP, SC-88, SOT-363 | No SVHC | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | -2V | 3.3W Tc | 1.6A | 0.29Ohm | SILICON | P-Channel | 290m Ω @ 2A, 10V | 2.5V @ 250μA | 355pF @ 25V | 5.4nC @ 4.5V | 1.6A Tc | 60V | 35 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SI3127DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | MO-193AA | 2W Ta 4.2W Tc | SWITCHING | 0.089Ohm | 60V | SILICON | P-Channel | 89m Ω @ 1.5A, 4.5V | 3V @ 250μA | 833pF @ 20V | 30nC @ 10V | 5.1A | 3.5A Ta 13A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SI2308BDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 156MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 1.09W | 4 ns | 1V | 1.09W Ta 1.66W Tc | 1.9A | 150°C | SWITCHING | 10 ns | SILICON | N-Channel | 156m Ω @ 1.9A, 10V | 3V @ 250μA | 190pF @ 30V | 6.8nC @ 10V | 16ns | 16 ns | 20V | 60V | 2.3A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||
SI2336DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | unknown | 1.12mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 1.25W | 6 ns | 1V | 1.25W Ta 1.8W Tc | 5.2A | 150°C | SWITCHING | 0.042Ohm | 20 ns | SILICON | N-Channel | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 560pF @ 15V | 15nC @ 8V | 10ns | 10 ns | 8V | 30V | 400 mV | 5.2A Tc | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||
SIA817EDJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2013 | LITTLE FOOT® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | PowerPAK® SC-70-6 Dual | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Dual | 6.5W | 1.9W Ta 6.5W Tc | 4.5A | 23 ns | P-Channel | 65m Ω @ 3A, 10V | 1.3V @ 250μA | 600pF @ 15V | 23nC @ 10V | 20ns | 10 ns | 12V | -30V | Schottky Diode (Isolated) | 4.5A Tc | 30V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
SI2399DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 22 ns | -600mV | 2.5W Tc | -6A | 150°C | SWITCHING | 28 ns | SILICON | P-Channel | 34m Ω @ 5.1A, 10V | 1.5V @ 250μA | 835pF @ 10V | 20nC @ 4.5V | 20ns | 9 ns | 12V | -20V | -600 mV | 6A | 6A Tc | 20V | 2.5V 10V | ±12V | |||||||||||||||||||||||||
SI4485DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | 42mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 2.4W | 8 ns | 2.4W Ta 5W Tc | 5.9A | SWITCHING | 18 ns | SILICON | P-Channel | 42m Ω @ 5.9A, 10V | 2.5V @ 250μA | 590pF @ 15V | 21nC @ 10V | 10ns | 8 ns | 20V | -30V | -1.2 V | 6A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2018 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | MO-193AA | 5W Tc | 0.025Ohm | 12V | SILICON | P-Channel | 25m Ω @ 7.9A, 4.5V | 1V @ 250μA | 2000pF @ 6V | 28nC @ 4.5V | 8A | 8A Tc | 12V | 620 pF | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
SI5471DC-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 1.1mm | 1.65mm | 20mOhm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 9 ns | 2.5W Ta 6.3W Tc | -6A | SWITCHING | 78 ns | SILICON | P-Channel | 20m Ω @ 9.1A, 4.5V | 1.1V @ 250μA | 2945pF @ 10V | 96nC @ 10V | 8ns | 22 ns | 12V | -20V | 6A | 6A Tc | 20V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||
SQJ860EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W | 10 ns | 48W Tc | 60A | 175°C | 0.006Ohm | 30 ns | SILICON | N-Channel | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 2700pF @ 25V | 55nC @ 10V | 20V | 40V | 36A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
2N7002E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | unknown | 1.12mm | 1.4mm | 3Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | FET General Purpose Powers | Not Qualified | 1 | Single | 350mW | 13 ns | 2V | 350mW Ta | 240mA | 150°C | SWITCHING | 18 ns | SILICON | N-Channel | 3 Ω @ 250mA, 10V | 2.5V @ 250μA | 21pF @ 5V | 0.6nC @ 4.5V | 20V | 68V | 0.24A | 240mA Ta | 60V | 10V | ±20V | ||||||||||||||||||||||||
SI2338DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | Single | 1.3W | 3 ns | 2.5V | 1.3W Ta 2.5W Tc | 6A | SWITCHING | 0.028Ohm | 20 ns | SILICON | N-Channel | 28m Ω @ 5.5A, 10V | 2.5V @ 250μA | 424pF @ 15V | 13nC @ 10V | 11ns | 7 ns | 20V | 30V | 6A | 6A Tc | 25A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
SQJ158EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W | 10 ns | 45W Tc | 23A | 175°C | 0.033Ohm | 22 ns | SILICON | N-Channel | 33m Ω @ 7A, 10V | 2.5V @ 250μA | 1100pF @ 25V | 30nC @ 10V | 20V | 60V | 23A Tc | 80A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SIHF30N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 125mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | TO-220AB | Single | 19 ns | 2V | 37W Tc | 29A | SWITCHING | 600V | 63 ns | SILICON | N-Channel | 125m Ω @ 15A, 10V | 4V @ 250μA | 2600pF @ 100V | 130nC @ 10V | 32ns | 36 ns | 20V | 29A Tc | 600V | 65A | 690 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
SIHP35N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 250W Tc | N-Channel | 94m Ω @ 17A, 10V | 4V @ 250μA | 2760pF @ 100V | 132nC @ 10V | 32A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG23N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2017 | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | 158mOhm | Through Hole | 38.000013g | -55°C~150°C TA | MOSFET (Metal Oxide) | NO | R-PSFM-T3 | 1 | 1 | TO-247AC | DRAIN | 227W Tc | 23A | SWITCHING | 600V | SILICON | N-Channel | 158m Ω @ 12A, 10V | 4V @ 250μA | 2418pF @ 100V | 95nC @ 10V | 23A Tc | 600V | 63A | 353 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
SIHG47N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | Single | 417W | 47 ns | 417W Tc | 47A | SWITCHING | 0.072Ohm | 650V | 156 ns | SILICON | N-Channel | 72m Ω @ 24A, 10V | 4V @ 250μA | 5682pF @ 100V | 273nC @ 10V | 87ns | 103 ns | 20V | 47A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
SI2334DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | 1.3W | 400mV | 1.3W Ta 1.7W Tc | 4.9A | SWITCHING | 0.044Ohm | SILICON | N-Channel | 44m Ω @ 4.2A, 4.5V | 1V @ 250μA | 634pF @ 15V | 10nC @ 4.5V | 10ns | 8 ns | 8V | 400 mV | 4.9A Tc | 30V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
SIHG73N60AE-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | 25.11mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 417W | 43 ns | 417W Tc | 60A | 150°C | 212 ns | N-Channel | 40m Ω @ 36.5A, 10V | 4V @ 250μA | 5500pF @ 100V | 394nC @ 10V | 30V | 600V | 60A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP33N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 28 ns | 4V | 278W Tc | 33A | SWITCHING | 0.098Ohm | 600V | 161 ns | SILICON | N-Channel | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 3454pF @ 100V | 155nC @ 10V | 43ns | 48 ns | 20V | 33A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
SIA445EDJT-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | PowerPAK® SC-70-6 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 19W Tc | SWITCHING | 0.0167Ohm | 20V | SILICON | P-Channel | 16.7m Ω @ 7A, 4.5V | 1.2V @ 250μA | 2180pF @ 10V | 69nC @ 10V | 12A | 12A Tc | 20V | 50A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
SIHA22N60AE-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 33W Tc | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1451pF @ 100V | 96nC @ 10V | 20A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA468DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SC-70-6 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 19W Tc | N-Channel | 8.4m Ω @ 11A, 10V | 2.4V @ 250μA | 1290pF @ 15V | 16nC @ 4.5V | 37.8A Tc | 30V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI8425DB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 4 | 4-UFBGA, WLCSP | 23mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | 260 | 30 | 1 | Other Transistors | Single | 2.7W | 50 ns | 1.1W Ta 2.7W Tc | 9.3A | 600 ns | P-Channel | 23m Ω @ 2A, 4.5V | 900mV @ 250μA | 2800pF @ 10V | 110nC @ 10V | 50ns | 200 ns | 10V | -20V | 20V | 1.8V 4.5V | ±10V |
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