All Products
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Integrated Circuits (ICs)
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Connectors
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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Turn On Time-Max (ton) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn Off Time-Max (toff) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIRA26DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2018 | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.9W | 9 ns | 43.1W Tc | 30.3A | 150°C | 16 ns | N-Channel | 2.65m Ω @ 15A, 10V | 2.5V @ 250μA | 2247pF @ 10V | 44nC @ 10V | 25V | 60A Tc | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2328DS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 250mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 730mW | 7 ns | 4V | 730mW Ta | 1.15A | 150°C | 9 ns | SILICON | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 5nC @ 10V | 11ns | 11 ns | 20V | 100V | 2 V | 1.15A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFL110TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 150°C | -55°C | 6.7mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-261-4, TO-261AA | Unknown | 1.8mm | 3.7mm | 540mOhm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 15A | 1 | 100V | 1 | Single | 3.1W | 6.9 ns | 540mOhm | SOT-223 | 2W Ta 3.1W Tc | 1.5A | 150°C | 15 ns | N-Channel | 540mOhm @ 900mA, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 1.5A Tc | 100V | 180pF | 10V | ±20V | 540 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI4436DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.5mm | 4mm | 36MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 2.5W | 10 ns | 2.5V | 2.5W Ta 5W Tc | 8A | SWITCHING | 25 ns | SILICON | N-Channel | 36m Ω @ 4.6A, 10V | 2.5V @ 250μA | 1100pF @ 30V | 32nC @ 10V | 15ns | 10 ns | 20V | 60V | 8A | 8A Tc | 25A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4056DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4mm | 23MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 2.5W | 11 ns | 2.8V | 2.5W Ta 5.7W Tc | 7.3A | 150°C | SWITCHING | 20 ns | SILICON | N-Channel | 23m Ω @ 15A, 10V | 2.8V @ 250μA | 900pF @ 50V | 29.5nC @ 10V | 20V | 100V | 11.1A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4686DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET®, WFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 3W | 20 ns | 3W Ta 5.2W Tc | 18.2A | SWITCHING | 0.0095Ohm | 30V | 20 ns | SILICON | N-Channel | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 1220pF @ 15V | 26nC @ 10V | 20ns | 8 ns | 20V | 3 V | 18.2A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI7108DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | ULTRA-LOW RESISTANCE | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 10 ns | 2V | 1.5W Ta | 22A | SWITCHING | 0.0049Ohm | 60 ns | SILICON | N-Channel | 4.9m Ω @ 22A, 10V | 2V @ 250μA | 30nC @ 4.5V | 10ns | 10 ns | 16V | 20V | 14A Ta | 60A | 24 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFR120TRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 2.39mm | 6.22mm | 270MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | Not Qualified | 1 | TO-252AA | DRAIN | Single | 2.5W | 6.8 ns | 2.5W Ta 42W Tc | 7.7A | SWITCHING | 18 ns | SILICON | N-Channel | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 360pF @ 25V | 16nC @ 10V | 27ns | 17 ns | 20V | 7.7A Tc | 100V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7655DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.3mm | ROHS3 Compliant | Tin | No | 8 | PowerPAK® 1212-8S | No SVHC | 780μm | 3.3mm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | C BEND | S-PDSO-C5 | 2 | 1 | DRAIN | Dual | 4.8W | 45 ns | -500mV | 4.8W Ta 57W Tc | -40A | SWITCHING | 0.0036Ohm | 110 ns | SILICON | P-Channel | 3.6m Ω @ 20A, 10V | 1.1V @ 250μA | 6600pF @ 10V | 225nC @ 10V | 12V | -20V | 40A Tc | 20V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SIR873DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | not_compliant | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173_SINGLE | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 15 ns | 104W Tc | -9A | 150°C | SWITCHING | 0.0475Ohm | 28 ns | SILICON | P-Channel | 47.5m Ω @ 10A, 10V | 4V @ 250μA | 1805pF @ 75V | 48nC @ 10V | 20V | -150V | 37A | 37A Tc | 150V | 50A | 80 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR638DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 104W Tc | 100A | N-Channel | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 10500pF @ 20V | 204nC @ 10V | 100A Tc | 40V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS468DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.4mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.12mm | 3.4mm | 19.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.7W | 8 ns | 1.5V | 3.7W Ta 52W Tc | 9.8A | 150°C | SWITCHING | 15 ns | SILICON | N-Channel | 19.5m Ω @ 10A, 10V | 3V @ 250μA | 780pF @ 40V | 28nC @ 10V | 20V | 80V | 30A | 30A Tc | 60A | 5 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIR862DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 28 ns | 5.2W Ta 69W Tc | 32A | SWITCHING | 25V | 39 ns | SILICON | N-Channel | 2.8m Ω @ 15A, 10V | 2.3V @ 250μA | 3800pF @ 10V | 90nC @ 10V | 16ns | 17 ns | 20V | 50A | 50A Tc | 25V | 70A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI7772DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | SkyFET®, TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | No SVHC | 13MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.9W | 2.5V | 3.9W Ta 29.8W Tc | 35.6A | SWITCHING | SILICON | N-Channel | 13m Ω @ 15A, 10V | 2.5V @ 250μA | 1084pF @ 15V | 28nC @ 10V | 20V | 30V | 2.5 V | 35.6A Tc | 50A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI1489EDH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Obsolete | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | 6-TSSOP, SC-88, SOT-363 | 48mOhm | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 6 | 1 | Other Transistors | 1 | Single | 156W | 90 ns | 2.8W Tc | 2A | SWITCHING | 690 ns | SILICON | P-Channel | 48m Ω @ 3A, 4.5V | 700mV @ 250μA | 16nC @ 4.5V | 170ns | 630 ns | 5V | -8V | 2A | 2A Tc | 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIR172DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 12.4MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.9W | 19 ns | 2.5V | 29.8W Tc | 20A | SWITCHING | 30V | 19 ns | SILICON | N-Channel | 8.9m Ω @ 16.1A, 10V | 2.5V @ 250μA | 997pF @ 15V | 30nC @ 10V | 19ns | 13 ns | 20V | 2.5 V | 20A Tc | 30V | 50A | 22 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7850DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | SMD/SMT | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.17mm | 5.89mm | 22mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | e3 | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 1.8W | 10 ns | 3V | 1.8W Ta | 6.2A | 150°C | SWITCHING | 25 ns | SILICON | N-Channel | 22m Ω @ 10.3A, 10V | 3V @ 250μA | 27nC @ 10V | 10ns | 10 ns | 20V | 60V | 60V | 3 V | 6.2A Ta | 40A | 40ns | 4.5V 10V | ±20V | 74ns | ||||||||||||||||||||||||||||||||
| SI2347DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | 1 | Single | 1.7W | -2.5V | 1.7W Tc | 5A | 150°C | SWITCHING | 0.042Ohm | 19 ns | SILICON | P-Channel | 42m Ω @ 3.8A, 10V | 2.5V @ 250μA | 705pF @ 15V | 22nC @ 10V | 6ns | 9 ns | 20V | -30V | 5A | 5A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI5424DC-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SMD, Flat Lead | Unknown | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 2.3V | 2.5W Ta 6.25W Tc | 6A | SWITCHING | 0.024Ohm | SILICON | N-Channel | 24m Ω @ 4.8A, 10V | 2.3V @ 250μA | 950pF @ 15V | 32nC @ 10V | 25V | 30V | 6A | 6A Tc | 40A | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| SIS488DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | PowerPAK® 1212-8 | 5.5mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | 1 | 1 | DRAIN | Single | 22 ns | 3.7W Ta 52W Tc | 40A | SWITCHING | 24 ns | SILICON | N-Channel | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 1330pF @ 20V | 32nC @ 10V | 65ns | 9 ns | 20V | 40V | 40A Tc | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8410DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | 4-UFBGA | Unknown | 30mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 850mV | 780mW Ta 1.8W Tc | 5.7A | N-Channel | 37m Ω @ 1.5A, 4.5V | 850mV @ 250μA | 620pF @ 10V | 16nC @ 8V | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ461EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | PowerPAK® SO-8 | 1.14mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 83W | 16 ns | -2V | PowerPAK® SO-8 | 83W Tc | -30A | 175°C | 70 ns | P-Channel | 16mOhm @ 14.4A, 10V | 2.5V @ 250μA | 4710pF @ 30V | 140nC @ 10V | 20V | -60V | 30A Tc | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR164DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 3.2MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 69W | 35 ns | 1.2V | 5.2W Ta 69W Tc | 50A | SWITCHING | 52 ns | SILICON | N-Channel | 2.5m Ω @ 15A, 10V | 2.5V @ 250μA | 3950pF @ 15V | 123nC @ 10V | 41ns | 39 ns | 20V | 30V | 33.3A | 50A Tc | 70A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLR120TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 270mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 9.8 ns | 2.5W Ta 42W Tc | 7.7A | SWITCHING | 21 ns | SILICON | N-Channel | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 27 ns | 10V | 100V | 7.7A Tc | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SI7308DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 58mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.2W | 10 ns | 3V | 3.2W Ta 19.8W Tc | 6A | SWITCHING | 20 ns | SILICON | N-Channel | 58m Ω @ 5.4A, 10V | 3V @ 250μA | 665pF @ 15V | 20nC @ 10V | 15ns | 10 ns | 20V | 60V | 5.4A | 6A Tc | 20A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SISA01DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | PowerPAK® 1212-8 | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 3.7W | 15 ns | 4.1mOhm | PowerPAK® 1212-8 | 3.7W Ta 52W Tc | -22.4A | 150°C | 39 ns | P-Channel | 4.9mOhm @ 15A, 10V | 2.2V @ 250μA | 3490pF @ 15V | 84nC @ 10V | -30V | 22.4A Ta 60A Tc | 30V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPE40PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | Lead Free | 5.4A | No | 3 | AVALANCHE RATED | TO-247-3 | 20.7mm | 5.31mm | 2Ohm | Through Hole | 38.000013g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 150W | 16 ns | 150W Tc | 830 ns | 5.4A | SWITCHING | 100 ns | SILICON | N-Channel | 2 Ω @ 3.2A, 10V | 4V @ 250μA | 1900pF @ 25V | 130nC @ 10V | 36ns | 32 ns | 20V | 800V | 4 V | 5.4A Tc | 22A | 490 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFBF20PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 6.5Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 54W | 8 ns | 4V | 8Ohm | TO-220AB | 54W Tc | 1.7A | 56 ns | N-Channel | 8Ohm @ 1A, 10V | 4V @ 250μA | 490pF @ 25V | 38nC @ 10V | 21ns | 32 ns | 20V | 900V | 4 V | 1.7A Tc | 900V | 490pF | 10V | ±20V | 8 Ω | ||||||||||||||||||||||||||||||||||||||||||||
| SIHF8N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | 10.63mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 9.8mm | 4.83mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | ISOLATED | Single | 33W | 13 ns | 3V | 33W Tc | 8.7A | SWITCHING | 0.85Ohm | 17 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 527pF @ 100V | 30nC @ 10V | 16ns | 11 ns | 30V | 500V | 8.7A Tc | 29 mJ | 10V | ±30V |