Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRFZ40PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 126W | 15 ns | 4V | 150W Tc | 35A | SWITCHING | 0.028Ohm | 60V | 35 ns | SILICON | N-Channel | 28m Ω @ 31A, 10V | 4V @ 250μA | 1900pF @ 25V | 67nC @ 10V | 25ns | 12 ns | 20V | 4 V | 50A | 50A Tc | 60V | 200A | 10V | ±20V | ||||||||||||||||||||||||||||
SQP90142E_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | TO-220-3 | 19.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 250W | 17 ns | 12.7mOhm | TO-220AB | 250W Tc | 78.5A | 175°C | 39 ns | N-Channel | 15.3mOhm @ 20A, 10V | 3.5V @ 250μA | 4200pF @ 25V | 85nC @ 10V | 20V | 200V | 78.5A Tc | 200V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF730APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 5.5A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 1Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 74W | 10 ns | 4.5V | 1Ohm | TO-220AB | 74W Tc | 550 ns | 5.5A | 20 ns | N-Channel | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 600pF @ 25V | 22nC @ 10V | 22ns | 16 ns | 30V | 400V | 4.5 V | 5.5A Tc | 400V | 600pF | 10V | ±30V | 1 Ω | |||||||||||||||||||||||||||||||||
IRLR014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 200mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 2.5W | 9.3 ns | 2V | 2.5W Ta 25W Tc | 7.7A | SWITCHING | 17 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 2 V | 7.7A Tc | 27.4 mJ | 4V 5V | ±10V | ||||||||||||||||||||||||||||
SISA96DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.5W | 8 ns | 26.5W Tc | 14.8A | 150°C | 13 ns | N-Channel | 8.8m Ω @ 10A, 10V | 2.2V @ 250μA | 1385pF @ 15V | 15nC @ 4.5V | 30V | 16A Tc | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3407DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 24mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2W | -1.5V | 4.2W Tc | -8A | SILICON | P-Channel | 24m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 1670pF @ 10V | 63nC @ 10V | 12V | -20V | -1.5 V | 7.5A | 8A Tc | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
SI8483DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | 1.5mm | ROHS3 Compliant | Tin | No | 6 | 6-UFBGA | No SVHC | 310μm | 1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | BALL | 1 | Other Transistors | 1 | Single | 2.77W | 20 ns | -400mV | 2.77W Ta 13W Tc | -16A | SWITCHING | 0.035Ohm | 80 ns | SILICON | P-Channel | 26m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 1840pF @ 6V | 65nC @ 10V | 20ns | 20 ns | 10V | 16A Tc | 12V | 25A | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||
SIHP12N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 13 ns | 4V | 114W Tc | 10.5A | SWITCHING | 500V | 29 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 886pF @ 100V | 50nC @ 10V | 16ns | 12 ns | 20V | 10.5A Tc | 500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
SIHF12N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | ISOLATED | Single | 33W | 16 ns | 33W Tc | 12A | SWITCHING | 650V | 35 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 1224pF @ 100V | 70nC @ 10V | 19ns | 18 ns | 20V | 12A Tc | 650V | 28A | 226 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SIHF6N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | TO-220AB | ISOLATED | Single | 31W | 14 ns | 31W Tc | 7A | SWITCHING | 0.6Ohm | 30 ns | SILICON | N-Channel | 600m Ω @ 3A, 10V | 4V @ 250μA | 820pF @ 100V | 48nC @ 10V | 12ns | 20 ns | 20V | 650V | 7A | 7A Tc | 56 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
SIHP11N80E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | RoHS Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 179W Tc | N-Channel | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 1670pF @ 100V | 88nC @ 10V | 12A Tc | 800V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 160mOhm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.7W | 10 ns | 4V | 160mOhm | TO-263 (D2Pak) | 3.7W Ta 88W Tc | 14A | 23 ns | N-Channel | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 670pF @ 25V | 26nC @ 10V | 34ns | 24 ns | 20V | 4 V | 14A Tc | 100V | 670pF | 10V | ±20V | 160 mΩ | |||||||||||||||||||||||||||||||||||||
IRF9Z24PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 280mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 60W | 13 ns | -4V | 280mOhm | TO-220AB | 60W Tc | 11A | 175°C | 15 ns | P-Channel | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | -60V | -4 V | 11A Tc | 60V | 570pF | 10V | ±20V | 280 mΩ | ||||||||||||||||||||||||||||||||||||
IRF610SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2004 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 1.5Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3W | 8.2 ns | 4V | 1.5Ohm | D2PAK | 3W Ta 36W Tc | 3.3A | 14 ns | N-Channel | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 17ns | 8.9 ns | 20V | 200V | 4 V | 3.3A Tc | 200V | 140pF | 10V | ±20V | 1.5 Ω | |||||||||||||||||||||||||||||||||||||
IRFR110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 4.7A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 540mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 25W | 6.9 ns | 4V | 2.5W Ta 25W Tc | 200 ns | 4.3A | SWITCHING | 15 ns | SILICON | N-Channel | 540m Ω @ 2.6A, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 4 V | 4.3A Tc | 75 mJ | 10V | ±20V | ||||||||||||||||||||||||||
IRFI640GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | Active | 1 (Unlimited) | 150°C | -55°C | 10.63mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 40W | 14 ns | 4V | 180mOhm | TO-220-3 | 40W Tc | 9.8A | 2.5kV | 45 ns | N-Channel | 180mOhm @ 5.9A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 9.8A Tc | 200V | 1.3nF | 10V | ±20V | 180 mΩ | |||||||||||||||||||||||||||||||||||||
IRFU9010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | -5.3A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | 500mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | Other Transistors | 1 | DRAIN | Single | 6.1 ns | 25W Tc | 5.3A | SWITCHING | 13 ns | SILICON | P-Channel | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 240pF @ 25V | 9.1nC @ 10V | 47ns | 35 ns | 50V | 5.3A Tc | 21A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SIHP8N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Tin | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 156W | 13 ns | 3V | 156W Tc | 8.7A | SWITCHING | 0.85Ohm | 500V | 17 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 527pF @ 100V | 30nC @ 10V | 16ns | 11 ns | 30V | 8.7A Tc | 500V | 29 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
IRFIZ34GPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.63mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack, Isolated Tab | Unknown | 9.8mm | 4.83mm | 50mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 3 | 1 | 1 | TO-220AB | Single | 42W | 13 ns | 4V | 42W Tc | 20A | SWITCHING | 60V | 29 ns | SILICON | N-Channel | 50m Ω @ 12A, 10V | 4V @ 250μA | 1200pF @ 25V | 46nC @ 10V | 100ns | 52 ns | 20V | 4 V | 20A Tc | 60V | 80A | 10V | ±20V | ||||||||||||||||||||||||||||||
SIHP6N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 104W | 12 ns | 104W Tc | 6A | SWITCHING | 1Ohm | 400V | 14 ns | SILICON | N-Channel | 1 Ω @ 3A, 10V | 5V @ 250μA | 311pF @ 100V | 18nC @ 10V | 11ns | 8 ns | 30V | 6A | 6A Tc | 400V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
IRF624PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 4.4A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 1.1Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | 1 | Single | 50W | 7 ns | 1.1Ohm | TO-220AB | 50W Tc | 4.4A | 20 ns | N-Channel | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 13ns | 12 ns | 20V | 250V | 4.4A Tc | 250V | 260pF | 10V | ±20V | 1.1 Ω | ||||||||||||||||||||||||||||||||||||||
SI7611DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.17mm | 3.05mm | 25mOhm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.7W | 10 ns | -1V | 3.7W Ta 39W Tc | -18A | 150°C | SWITCHING | 30 ns | SILICON | P-Channel | 25m Ω @ 9.3A, 10V | 3V @ 250μA | 1980pF @ 20V | 62nC @ 10V | 11ns | 9 ns | 20V | -40V | -3 V | 9.3A | 18A Tc | 40V | 20A | 26 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||
IRF740BPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 1 | 1 | TO-220AB | Single | 14 ns | 5V | 147W Tc | 10A | SWITCHING | 0.6Ohm | 400V | 50 ns | SILICON | N-Channel | 600m Ω @ 5A, 10V | 5V @ 250μA | 526pF @ 100V | 30nC @ 10V | 27ns | 24 ns | 20V | 10A Tc | 400V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
IRF644PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | 14A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 280mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 11 ns | 4V | 280mOhm | TO-220AB | 125W Tc | 500 ns | 14A | 53 ns | N-Channel | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 1300pF @ 25V | 68nC @ 10V | 24ns | 49 ns | 20V | 250V | 4 V | 14A Tc | 250V | 1.3nF | 10V | ±20V | 280 mΩ | |||||||||||||||||||||||||||||||||
IRF840BPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 1 | 1 | TO-220AB | Single | 13 ns | 5V | 156W Tc | 8.7A | SWITCHING | 0.85Ohm | 17 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 527pF @ 100V | 30nC @ 10V | 16ns | 11 ns | 30V | 500V | 8.7A Tc | 29 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SI4186DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 540.001716mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 3W | 29 ns | 3W Ta 6W Tc | 35.8A | SWITCHING | 0.0026Ohm | 40 ns | SILICON | N-Channel | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 3630pF @ 10V | 90nC @ 10V | 16ns | 13 ns | 20V | 20V | 2.4 V | 25.3A | 35.8A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SIRA06DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | 6.25mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | 2.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 260 | 30 | 1 | Single | 5W | 24 ns | 1.1V | 5W Ta 62.5W Tc | 40A | 30 ns | N-Channel | 2.5m Ω @ 15A, 10V | 2.2V @ 250μA | 3595pF @ 15V | 77nC @ 10V | 20 ns | 20V | 30V | 40A Tc | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||
SIRA04DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.25mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | 2.15mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | 1 | DRAIN | Single | 5W | 24 ns | 1.1V | 5W Ta 62.5W Tc | 40A | SWITCHING | 30 ns | SILICON | N-Channel | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 3595pF @ 15V | 77nC @ 10V | 16 ns | 20V | 30V | 1.1 V | 40A Tc | 20 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||
SI4166DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 3.9MOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3W | 30 ns | 1.2V | 3W Ta 6.5W Tc | 20.5A | SWITCHING | 35 ns | SILICON | N-Channel | 3.9m Ω @ 15A, 10V | 2.4V @ 250μA | 2730pF @ 15V | 65nC @ 10V | 19ns | 15 ns | 20V | 30V | 30.5A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SI7892BDP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 4.2mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.8W | 20 ns | 1V | 1.8W Ta | 25A | SWITCHING | 30V | 62 ns | SILICON | N-Channel | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 3775pF @ 15V | 40nC @ 4.5V | 20ns | 35 ns | 20V | 1 V | 15A Ta | 30V | 60A | 4.5V 10V | ±20V |
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