Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIHG20N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | 160mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-247AC | DRAIN | Single | 17 ns | 4V | 179W Tc | 19A | SWITCHING | 48 ns | SILICON | N-Channel | 184m Ω @ 10A, 10V | 4V @ 250μA | 1640pF @ 100V | 92nC @ 10V | 27ns | 25 ns | 20V | 500V | 19A Tc | 42A | 204 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
SIHG11N80E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 179W Tc | N-Channel | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 1670pF @ 100V | 88nC @ 10V | 12A Tc | 800V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHB12N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Bulk | 2005 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 4V | 114W Tc | 10.5A | SWITCHING | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 886pF @ 100V | 50nC @ 10V | 500V | 10.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRFPC50PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 11A | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 600mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | 1 | 1 | Single | 180W | 18 ns | 4V | 600mOhm | TO-247-3 | 180W Tc | 830 ns | 11A | 88 ns | N-Channel | 600mOhm @ 6A, 10V | 4V @ 250μA | 2700pF @ 25V | 140nC @ 10V | 37ns | 36 ns | 20V | 600V | 11A Tc | 600V | 2.7nF | 10V | ±20V | 600 mΩ | |||||||||||||||||||||||||||||||||||||
SIR426DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 12.5MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 41.7W | 9 ns | 2.5V | 4.8W Ta 41.7W Tc | 30A | 150°C | SWITCHING | 18 ns | SILICON | N-Channel | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 1160pF @ 20V | 31nC @ 10V | 15ns | 10 ns | 20V | 40V | 2.5 V | 30A Tc | 70A | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
SI2301CDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 860mW | 11 ns | -1V | 860mW Ta 1.6W Tc | -2.3A | 150°C | SWITCHING | 30 ns | SILICON | P-Channel | 112m Ω @ 2.8A, 4.5V | 1V @ 250μA | 405pF @ 10V | 10nC @ 4.5V | 35ns | 35 ns | 8V | -20V | 3.1A Tc | 20V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
SIHU5N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | DRAIN | Single | 104W | 12 ns | 104W Tc | 5.3A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 500V | 3 V | 5.3A Tc | 28.8 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
IRL520LPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2017 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.54mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-262-3 Long Leads, I2Pak, TO-262AA | 8.76mm | 4.7mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 9.8 ns | 60W Tc | 9.2A | SWITCHING | 0.27Ohm | 21 ns | SILICON | N-Channel | 270m Ω @ 5.5A, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 27 ns | 10V | 100V | 9.2A Tc | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
IRFR010TRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | TO-252AA | Single | 10 ns | 25W Tc | 8.2A | 0.2Ohm | 13 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 250pF @ 25V | 10nC @ 10V | 50ns | 19 ns | 20V | 60V | 8.2A Tc | 50V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SI7634BDP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | PowerPAK® SO-8 | 1.04mm | 5.89mm | 5.4mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 30 ns | 5W Ta 48W Tc | 40A | 34 ns | SILICON | N-Channel | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 3150pF @ 15V | 68nC @ 10V | 12ns | 12 ns | 20V | 30V | 22.5A | 40A Tc | 70A | 45 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRFD320PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.37mm | 6.29mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | R-PDIP-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 1W | 10 ns | 1W Ta | 490mA | SWITCHING | 30 ns | SILICON | N-Channel | 1.8 Ω @ 210mA, 10V | 4V @ 250μA | 410pF @ 25V | 20nC @ 10V | 14ns | 14 ns | 20V | 400V | 4 V | 490mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SIHP18N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 270mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 223W | 80 ns | 5V | 223W Tc | 18A | SWITCHING | 500V | 32 ns | SILICON | N-Channel | 270m Ω @ 10A, 10V | 5V @ 250μA | 2942pF @ 25V | 76nC @ 10V | 27ns | 44 ns | 30V | 5 V | 18A Tc | 500V | 72A | 10V | ±30V | ||||||||||||||||||||||||||||||||||
IRFP054PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | TO-247-3 | 20.7mm | 5.31mm | 14mOhm | Through Hole | 38.000013g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | DRAIN | Single | 230W | 20 ns | 230W Tc | 540 ns | 70A | SWITCHING | 83 ns | SILICON | N-Channel | 14m Ω @ 54A, 10V | 4V @ 250μA | 4500pF @ 25V | 160nC @ 10V | 160ns | 150 ns | 20V | 60V | 70A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SIHP5N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 104W | 12 ns | 104W Tc | 5.3A | SWITCHING | 500V | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 5.3A Tc | 500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
SIA418DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Obsolete | 1 (Unlimited) | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 3.5W Ta 19W Tc | 12A | N-Channel | 18m Ω @ 9A, 10V | 2.4V @ 250μA | 570pF @ 15V | 17nC @ 10V | 2.4V | 30V | 12A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI5429DU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | Discontinued | 1 (Unlimited) | EAR99 | 150°C | -55°C | 3.08mm | ROHS3 Compliant | No | 8 | PowerPAK® ChipFET™ Dual | No SVHC | 850μm | 1.98mm | Surface Mount | MOSFET (Metal Oxide) | 31W | 1 | Single | 31W | 35 ns | -1V | 12A | 60 ns | P-Channel | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 2320pF @ 15V | 63nC @ 10V | 50ns | 20 ns | 20V | -30V | 12A Tc | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||
SIHB22N60S-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | 2 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 190mOhm | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 250W | 24 ns | 2V | 250W Tc | 22A | SWITCHING | 77 ns | N-Channel | 190m Ω @ 11A, 10V | 4V @ 250μA | 2810pF @ 25V | 110nC @ 10V | 68ns | 59 ns | 20V | 600V | 22A Tc | 65A | 690 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
SIHF22N60S-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 190mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 250W | 24 ns | 2V | 250W Tc | 22A | SWITCHING | 77 ns | SILICON | N-Channel | 190m Ω @ 11A, 10V | 4V @ 250μA | 2810pF @ 25V | 110nC @ 10V | 68ns | 59 ns | 20V | 600V | 22A Tc | 65A | 690 mJ | |||||||||||||||||||||||||||||||||||||||
SUM110N04-2M1P-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 2.1mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | Single | 312W | 102 ns | 1.2V | 3.13W Ta 312W Tc | 11A | SWITCHING | 180 ns | SILICON | N-Channel | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 18800pF @ 20V | 360nC @ 10V | 62ns | 60 ns | 20V | 40V | 29A Ta 110A Tc | 250A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SUM90N04-3M3P-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3.3mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | Single | 3.1W | 11 ns | 3.1W Ta 125W Tc | 90A | SWITCHING | 45 ns | SILICON | N-Channel | 3.3m Ω @ 22A, 10V | 2.5V @ 250μA | 5286pF @ 20V | 131nC @ 10V | 7ns | 7 ns | 20V | 40V | 90A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
SI4410BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Powers | 1 | Single | 1.4W | 10 ns | 1V | 1.4W Ta | 10A | SWITCHING | 40 ns | SILICON | N-Channel | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 20nC @ 5V | 10ns | 15 ns | 20V | 30V | 7.5A | 7.5A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||
SIB404DK-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-75-6L | Unknown | 19mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 6 | S-PDSO-C3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 5 ns | 350mV | 2.5W Ta 13W Tc | 9A | SWITCHING | 20 ns | SILICON | N-Channel | 19m Ω @ 3A, 4.5V | 800mV @ 250μA | 15nC @ 4.5V | 40ns | 20 ns | 5V | 9A | 9A Tc | 12V | 35A | 4.5V | ±5V | |||||||||||||||||||||||||||||||||
SIHF15N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Bulk | 2013 | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 280mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 3 | 1 | TO-220AB | Single | 34W | 17 ns | 2V | 34W Tc | 15A | SWITCHING | 35 ns | SILICON | N-Channel | 280m Ω @ 8A, 10V | 4V @ 250μA | 1350pF @ 100V | 78nC @ 10V | 51ns | 33 ns | 20V | 600V | 15A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
SIA429DJT-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 40 | 6 | S-PDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 22 ns | 3.5W Ta 19W Tc | 10.6A | SWITCHING | 0.0205Ohm | 70 ns | SILICON | P-Channel | 20.5m Ω @ 6A, 4.5V | 1V @ 250μA | 1750pF @ 10V | 62nC @ 8V | 25ns | 25 ns | 8V | -20V | -400 mV | 12A Tc | 20V | 30A | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||
SIUD403ED-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | PowerPAK® 0806 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.25W Ta | SWITCHING | 20V | SILICON | P-Channel | 1.25 Ω @ 300mA, 4.5V | 900mV @ 250μA | 31pF @ 10V | 1nC @ 4.5V | 500mA Ta | 20V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG22N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | DRAIN | 312W | 21 ns | 312W Tc | 22A | SWITCHING | 500V | 47 ns | SILICON | N-Channel | 230m Ω @ 11A, 10V | 5V @ 250μA | 1938pF @ 100V | 98nC @ 10V | 42ns | 40 ns | 30V | 22A Tc | 500V | 67A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
IRFBC40ASPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 1.2Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 13 ns | 1.2Ohm | D2PAK | 125W Tc | 6.2A | 31 ns | N-Channel | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 1036pF @ 25V | 42nC @ 10V | 23ns | 18 ns | 30V | 600V | 4 V | 6.2A Tc | 600V | 1.036nF | 10V | ±30V | 1.2 Ω | ||||||||||||||||||||||||||||||||||||||||
SIHG44N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Tube | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NO | R-PSFM-T3 | 1 | TO-247AC | 417W Tc | SWITCHING | 0.073Ohm | 650V | SILICON | N-Channel | 73m Ω @ 22A, 10V | 4V @ 250μA | 5892pF @ 100V | 278nC @ 10V | 46A | 46A Tc | 650V | 154A | 596 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG70N60AEF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Tube | EF | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | 24.99mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 417W | 45 ns | 417W Tc | 60A | 150°C | 219 ns | N-Channel | 41m Ω @ 35A, 10V | 4V @ 250μA | 5348pF @ 100V | 410nC @ 10V | 20V | 600V | 60A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHG24N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 145mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 250W | 24 ns | 2V | 145mOhm | TO-247AC | 250W Tc | 24A | 70 ns | N-Channel | 145mOhm @ 12A, 10V | 4V @ 250μA | 2740pF @ 100V | 122nC @ 10V | 84ns | 69 ns | 20V | 650V | 24A Tc | 650V | 2.74nF | 10V | ±30V | 145 mΩ |
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