Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Turn On Time-Max (ton) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Turn Off Time-Max (toff) |
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SI3483CDV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TA | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2W | 10 ns | -3V | 2W Ta 4.2W Tc | -8A | SWITCHING | 0.034Ohm | 30V | 30 ns | SILICON | P-Channel | 34m Ω @ 6.1A, 10V | 3V @ 250μA | 1000pF @ 15V | 33nC @ 10V | 15ns | 10 ns | 20V | -3 V | 8A | 8A Tc | 30V | 10V | ±20V | ||||||||||||||||||||||||||||||
SQJA84EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55W | 11 ns | 55W Tc | 46A | 175°C | 23 ns | SILICON | N-Channel | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 2100pF @ 25V | 35nC @ 10V | 20V | 80V | 46A Tc | 36 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
SI7309DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 | Unknown | 115MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 3.2W | 10 ns | -3V | 3.2W Ta 19.8W Tc | -8A | SWITCHING | 30 ns | SILICON | P-Channel | 115m Ω @ 3.9A, 10V | 3V @ 250μA | 600pF @ 30V | 22nC @ 10V | 15ns | 33 ns | 20V | -60V | 3.9A | 8A Tc | 60V | 20A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRFR9220TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 1.5Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 8.8 ns | -2V | 1.5Ohm | D-Pak | 2.5W Ta 42W Tc | 3.6A | 7.3 ns | P-Channel | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 340pF @ 25V | 20nC @ 10V | 27ns | 19 ns | 20V | -200V | -2 V | 3.6A Tc | 200V | 340pF | 10V | ±20V | 1.5 Ω | ||||||||||||||||||||||||||||||||||||||
SIRA58DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 27.7W Tc | 60A | N-Channel | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 3750pF @ 20V | 75nC @ 10V | 60A Tc | 40V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJA80EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | PowerPAK® SO-8 | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 68W | 16 ns | 5.8mOhm | PowerPAK® SO-8 | 68W Tc | 60A | 175°C | 31 ns | N-Channel | 7mOhm @ 10A, 10V | 2.5V @ 250μA | 3800pF @ 25V | 75nC @ 10V | 20V | 80V | 60A Tc | 80V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7315DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Tin | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-C5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 8 ns | 3.8W Ta 52W Tc | -8.9A | SWITCHING | 23 ns | SILICON | P-Channel | 315m Ω @ 2.4A, 10V | 4V @ 250μA | 880pF @ 75V | 30nC @ 10V | 9ns | 8 ns | 30V | -150V | 8.9A Tc | 150V | 7.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
SI3459BDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 216MOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2W | 5 ns | -3V | 2W Ta 3.3W Tc | -2.2A | SWITCHING | 18 ns | SILICON | P-Channel | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 350pF @ 30V | 12nC @ 10V | 12ns | 10 ns | 20V | -3 V | 0.0022A | 2.9A Tc | 60V | 30 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SI1499DH-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | No | 6 | 6-TSSOP, SC-88, SOT-363 | Unknown | 1mm | 1.25mm | 78mOhm | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 40 | 6 | 1 | Other Transistors | 1 | Single | 2.5W | 8 ns | -800mV | 2.5W Ta 2.78W Tc | 1.6A | SWITCHING | 8V | 46 ns | SILICON | P-Channel | 78m Ω @ 2A, 4.5V | 800mV @ 250μA | 650pF @ 4V | 16nC @ 4.5V | 40ns | 60 ns | 5V | -800 mV | 1.6A Tc | 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||
IRLZ24PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Unknown | 9.01mm | 4.7mm | 100mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 60W | 11 ns | 2V | 60W Tc | 17A | SWITCHING | 60V | 23 ns | SILICON | N-Channel | 100m Ω @ 10A, 5V | 2V @ 250μA | 870pF @ 25V | 18nC @ 5V | 110ns | 41 ns | 10V | 2 V | 17A Tc | 60V | 68A | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||
IRFBG20PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 1.4A | No | 3 | TO-220-3 | Unknown | 19.89mm | 4.7mm | 11Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | 1 | 1 | Single | 54W | 9.4 ns | 4V | 11Ohm | TO-220AB | 54W Tc | 1.4A | 150°C | 58 ns | N-Channel | 11Ohm @ 840mA, 10V | 4V @ 250μA | 500pF @ 25V | 38nC @ 10V | 17ns | 31 ns | 20V | 1kV | 4 V | 1.4A Tc | 1000V | 500pF | 10V | ±20V | 11 Ω | ||||||||||||||||||||||||||||||||||||
IRFD9024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 175°C | -55°C | 5mm | ROHS3 Compliant | Lead Free | -1.6A | No | 4 | 4-DIP (0.300, 7.62mm) | No SVHC | 3.37mm | 6.29mm | 280mOhm | Through Hole | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | 1 | Single | 1.3W | 13 ns | -4V | 280mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 200 ns | -1.6A | 15 ns | P-Channel | 280mOhm @ 960mA, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 68 ns | 20V | 60V | 1.6A Ta | 60V | 570pF | 10V | ±20V | 280 mΩ | |||||||||||||||||||||||||||||||||||||||
SUM110P04-05-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.08mm | 9.65mm | 4.2mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 15W | 25 ns | -3V | 15W Ta 375W Tc | -110A | 175°C | SWITCHING | 110 ns | SILICON | P-Channel | 5m Ω @ 20A, 10V | 4V @ 250μA | 11300pF @ 25V | 280nC @ 10V | 290ns | 35 ns | 20V | -40V | -3 V | 110A Tc | 40V | 240A | 480ns | 10V | ±20V | 220ns | ||||||||||||||||||||||||||||
IRF644SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 280MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3.1W | 11 ns | 4V | 3.1W Ta 125W Tc | 14A | SWITCHING | 53 ns | SILICON | N-Channel | 280m Ω @ 8.4A, 10V | 4V @ 250μA | 1300pF @ 25V | 68nC @ 10V | 24ns | 49 ns | 20V | 250V | 4 V | 14A Tc | 56A | 550 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
SIHP25N40D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 278W | 21 ns | 3V | 278W Tc | 25A | SWITCHING | 40 ns | SILICON | N-Channel | 170m Ω @ 13A, 10V | 5V @ 250μA | 1707pF @ 100V | 88nC @ 10V | 57ns | 37 ns | 30V | 400V | 25A Tc | 78A | 556 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
IRF9540SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 200mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 16 ns | -4V | 200mOhm | D2PAK | 3.7W Ta 150W Tc | -19A | 34 ns | P-Channel | 200mOhm @ 11A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | 19A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | ||||||||||||||||||||||||||||||||||||||||
IRFP460APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-247-3 | Unknown | 25.11mm | 5.31mm | 270mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | Single | 280W | 18 ns | 4V | 280W Tc | 20A | 150°C | SWITCHING | 45 ns | SILICON | N-Channel | 270m Ω @ 12A, 10V | 4V @ 250μA | 3100pF @ 25V | 105nC @ 10V | 55ns | 39 ns | 30V | 500V | 2 V | 20A Tc | 80A | 960 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
IRFP22N50APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 22A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 230mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 277W | 26 ns | 4V | 230mOhm | TO-247-3 | 277W Tc | 850 ns | 22A | 47 ns | N-Channel | 230mOhm @ 13A, 10V | 4V @ 250μA | 3450pF @ 25V | 120nC @ 10V | 94ns | 47 ns | 30V | 500V | 2 V | 22A Tc | 500V | 3.45nF | 10V | ±30V | 230 mΩ | ||||||||||||||||||||||||||||||||||||
SI3430DV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 170mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 6 | 1 | FET General Purpose Power | 1 | Single | 1.14W | 9 ns | 2V | 1.14W Ta | 1.8A | 16 ns | SILICON | N-Channel | 170m Ω @ 2.4A, 10V | 2V @ 250μA (Min) | 6.6nC @ 10V | 11ns | 11 ns | 20V | 100V | 2 V | 1.8A Ta | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
SIA421DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | 83MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 260 | 40 | 6 | S-XDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 40 ns | -3V | 3.5W Ta 19W Tc | -12A | SWITCHING | 30 ns | SILICON | P-Channel | 35m Ω @ 5.3A, 10V | 3V @ 250μA | 950pF @ 15V | 29nC @ 10V | 110ns | 12 ns | 20V | -30V | -3 V | 7.9A | 12A Tc | 30V | 35A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SQJ486EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 56W Tc | 0.026Ohm | 75V | SILICON | N-Channel | 26m Ω @ 51A, 10V | 2.1V @ 250μA | 1386pF @ 15V | 34nC @ 10V | 30A | 30A Tc | 75V | 120A | 9 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 500mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 11 ns | 2.5W Ta 25W Tc | 5.1A | SWITCHING | 9.6 ns | SILICON | P-Channel | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 31 ns | 20V | -60V | 5.1A Tc | 60V | 20A | 10V | ±20V | |||||||||||||||||||||||||||||||
SI7114ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.7W | 20 ns | 3V | 3.7W Ta 39W Tc | 18.3A | SWITCHING | 0.0075Ohm | 30V | 20 ns | SILICON | N-Channel | 7.5m Ω @ 18A, 10V | 2.5V @ 250μA | 1230pF @ 15V | 32nC @ 10V | 14ns | 10 ns | 20V | 35A | 35A Tc | 30V | 60A | 45 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
SQS401EN-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | PowerPAK® 1212-8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 20mOhm | PowerPAK® 1212-8 | 62.5W Tc | P-Channel | 29mOhm @ 12A, 10V | 2.5V @ 250μA | 1875pF @ 20V | 21.2nC @ 4.5V | 16A Tc | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIR470DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | AVALANCHE RATED | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 2.3MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 6.25W | 40 ns | 1V | 6.25W Ta 104W Tc | 60A | SWITCHING | 85 ns | SILICON | N-Channel | 2.3m Ω @ 20A, 10V | 2.5V @ 250μA | 5660pF @ 20V | 155nC @ 10V | 31ns | 39 ns | 20V | 40V | 2.5 V | 60A Tc | 4.5V 10V | ±20V | 225ns | ||||||||||||||||||||||||||||||
SIS435DNT-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8 | PowerPAK® 1212-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-C5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.7W | 3.7W Ta 39W Tc | 30A | SWITCHING | 0.0054Ohm | 100 ns | SILICON | P-Channel | 5.4m Ω @ 13A, 4.5V | 900mV @ 250μA | 5700pF @ 10V | 180nC @ 8V | 30ns | 30 ns | 8V | -20V | 30A Tc | 20V | 20 mJ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
SI7619DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 21mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W | 10 ns | 3.5W Ta 27.8W Tc | 10.5A | SWITCHING | 45 ns | SILICON | P-Channel | 21m Ω @ 10.5A, 10V | 3V @ 250μA | 1350pF @ 15V | 50nC @ 10V | 8ns | 12 ns | 20V | -30V | 24A | 24A Tc | 30V | 50A | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SI7113ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W | 10 ns | 27.8W Tc | -3.8A | 150°C | SWITCHING | 20 ns | SILICON | P-Channel | 132m Ω @ 3.8A, 10V | 2.6V @ 250μA | 515pF @ 50V | 16.5nC @ 10V | 20V | -100V | 10.8A Tc | 100V | 20A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
SI8472DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | 4-UFBGA | 44MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | S-PBGA-B4 | 1 | FET General Purpose Powers | 1 | Single | 780mW Ta | 4.5A | SWITCHING | SILICON | N-Channel | 44m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 630pF @ 10V | 18nC @ 8V | 8V | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFZ10PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 200MOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 43W | 10 ns | 4V | 43W Tc | 10A | SWITCHING | 60V | 13 ns | SILICON | N-Channel | 200m Ω @ 6A, 10V | 4V @ 250μA | 300pF @ 25V | 11nC @ 10V | 50ns | 19 ns | 20V | 10A Tc | 60V | 40A | 47 mJ | 10V | ±20V |
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