Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IPI80N06S3L-05 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 80A | LOGIC LEVEL COMPATIBLE | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | 260 | 40 | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | Single | 165W | 165W Tc | 80A | SWITCHING | 0.008Ohm | 65 ns | SILICON | N-Channel | 4.8m Ω @ 69A, 10V | 2.2V @ 115μA | 13060pF @ 25V | 273nC @ 10V | 49ns | 41 ns | 16V | 55V | 80A Tc | 320A | 345 mJ | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
IRF530NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 70W Tc | SWITCHING | 0.09Ohm | 100V | SILICON | N-Channel | 90m Ω @ 9A, 10V | 4V @ 250μA | 920pF @ 25V | 37nC @ 10V | 17A | 17A Tc | 100V | 60A | 93 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
SPU07N60S5 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tube | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | Tin | 7.3A | 3 | AVALANCHE RATED, HIGH VOLTAGE | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | FET General Purpose Power | Not Qualified | 1 | Single | 83W | 120 ns | 83W Tc | 7.3A | SWITCHING | 0.6Ohm | 170 ns | SILICON | N-Channel | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 970pF @ 25V | 35nC @ 10V | 40ns | 20 ns | 20V | 600V | 7.3A Tc | 14.6A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSP170PL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W | 14 ns | 1.8W Ta | 1.9A | SWITCHING | 0.3Ohm | 60V | 92 ns | SILICON | P-Channel | 300m Ω @ 1.9A, 10V | 4V @ 250μA | 410pF @ 25V | 14nC @ 10V | 60 ns | 20V | 1.9A Ta | 60V | 7.6A | 70 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSP296L6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.79W | 5.2 ns | 1.79W Ta | 1.1A | 0.7Ohm | 37.4 ns | SILICON | N-Channel | 700m Ω @ 1.1A, 10V | 1.8V @ 400μA | 364pF @ 25V | 17.2nC @ 10V | 7.9ns | 21.4 ns | 20V | 1.1A Ta | 100V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
SPP80N06S08AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2005 | SIPMOS® | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 300W Tc | 0.008Ohm | 55V | SILICON | N-Channel | 8m Ω @ 80A, 10V | 4V @ 250μA | 3660pF @ 25V | 187nC @ 10V | 80A | 80A Tc | 55V | 320A | 700 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPD800N06NGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 47W | 7 ns | 47W Tc | 16A | SWITCHING | 0.08Ohm | 60V | 22 ns | SILICON | N-Channel | 80m Ω @ 16A, 10V | 4V @ 16μA | 370pF @ 30V | 10nC @ 10V | 38ns | 27 ns | 20V | 16A Tc | 60V | 64A | 43 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPB45N06S409ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | 10mm | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | Single | 15 ns | 60V | 71W Tc | 45A | 20 ns | SILICON | N-Channel | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 3785pF @ 25V | 47nC @ 10V | 40ns | 5 ns | 20V | 45A Tc | 97 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
SPB12N50C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2005 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Lead Free | 11.6A | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | 560V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 4 | YES | R-PSSO-G2 | 1 | Halogen Free | Single | 125W | 10 ns | 125W Tc | 11.6A | 45 ns | SILICON | N-Channel | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 1200pF @ 25V | 49nC @ 10V | 8ns | 8 ns | 20V | 500V | 3 V | 11.6A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF6612TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.35mm | RoHS Compliant | Lead Free | 24A | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | BOTTOM | NO LEAD | 260 | 30 | R-XBCC-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 15 ns | 2.8W Ta 89W Tc | 136mA | SWITCHING | 0.0033Ohm | 21 ns | SILICON | N-Channel | 3.3m Ω @ 24A, 10V | 2.25V @ 250μA | 3970pF @ 15V | 45nC @ 4.5V | 52ns | 4.8 ns | 20V | 30V | 1.8 V | 24A Ta 136A Tc | 190A | 37 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
BSP603S2LHUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | 6.5mm | Non-RoHS Compliant | Contains Lead | Tin | 5.2A | No | 4 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 4 | 1 | DRAIN | Not Halogen Free | Single | 1.8W | 10.8 ns | 55V | 1.8W Ta | 5.2A | 28 ns | SILICON | N-Channel | 33m Ω @ 2.6A, 10V | 2V @ 50μA | 1390pF @ 25V | 42nC @ 10V | 16ns | 16 ns | 20V | 55V | 5.2A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
BUZ32 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 9.5A | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 75W | 75W Tc | 9.5A | 0.4Ohm | 55 ns | SILICON | N-Channel | 400m Ω @ 6A, 10V | 4V @ 1mA | 530pF @ 25V | 40ns | 30 ns | 20V | 200V | 9.5A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSO104N03S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 8 | EAR99 | RoHS Compliant | Lead Free | 13A | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | NOT SPECIFIED | 8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 1.56W | 5 ns | 1.56W Ta | 10A | SWITCHING | 0.0097Ohm | 21 ns | SILICON | N-Channel | 9.7m Ω @ 13A, 10V | 2V @ 30μA | 2130pF @ 15V | 16nC @ 5V | 4.2ns | 4.2 ns | 20V | 30V | 10A Tc | 110 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF2907ZS-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10.3378mm | RoHS Compliant | Lead Free | 160A | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.5466mm | 10.05mm | 4.5MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 21 ns | 4V | 35 ns | 300W Tc | 53 ns | 160A | SWITCHING | 92 ns | SILICON | N-Channel | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 7580pF @ 25V | 260nC @ 10V | 90ns | 44 ns | 20V | 75V | 75V | 4 V | 160A Tc | 10V | ±20V | ||||||||||||||||||||||||||
IRFR3518PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 110W Tc | N-Channel | 29m Ω @ 18A, 10V | 4V @ 250μA | 1710pF @ 25V | 56nC @ 10V | 38A Tc | 80V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9Z24NSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 10.54mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 45W | 13 ns | -4V | 3.8W Ta 45W Tc | -12A | SWITCHING | 23 ns | SILICON | P-Channel | 175m Ω @ 7.2A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 55ns | 37 ns | 20V | -55V | 55V | -4 V | 12A Tc | 48A | 96 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IRF1405ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 4.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 18 ns | 4V | 230W Tc | 75A | SWITCHING | 48 ns | SILICON | N-Channel | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 4780pF @ 25V | 180nC @ 10V | 110ns | 82 ns | 20V | 55V | 4 V | 75A Tc | 600A | 420 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IRLR8743PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2007 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 3.1MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 135W | 19 ns | 1.9V | 135W Tc | 160A | SWITCHING | 21 ns | SILICON | N-Channel | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 4880pF @ 15V | 59nC @ 4.5V | 35ns | 17 ns | 20V | 30V | 1.9 V | 160A Tc | 640A | 250 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IRFR540ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.2606mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 91W | 14 ns | 4V | 91W Tc | 48 ns | 35A | 43 ns | N-Channel | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 1690pF @ 25V | 59nC @ 10V | 42ns | 34 ns | 20V | 100V | 100V | 4 V | 35A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF1404ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 200W Tc | N-Channel | 3.7m Ω @ 75A, 10V | 4V @ 150μA | 4340pF @ 25V | 150nC @ 10V | 180A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLL024ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 1999 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead | 5A | No | 3 | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 60MOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | 1 | Single | 2.8W | 8.6 ns | 3V | 1W Ta | 5A | 20 ns | N-Channel | 60m Ω @ 3A, 10V | 3V @ 250μA | 380pF @ 25V | 11nC @ 5V | 33ns | 15 ns | 16V | 55V | 55V | 3 V | 5A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
IPP80N03S4L04AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | Halogen Free | 9 ns | 30V | 94W Tc | 80A | 37 ns | SILICON | N-Channel | 3.7m Ω @ 80A, 10V | 2.2V @ 45μA | 5100pF @ 25V | 75nC @ 10V | 6ns | 7 ns | 16V | 80A Tc | 95 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
IPP80N06S207AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | OptiMOS™ | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 18 ns | 55V | 250W Tc | 80A | 28 ns | N-Channel | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 3400pF @ 25V | 110nC @ 10V | 35ns | 31 ns | 20V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW90R800C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 104W | 70 ns | 900V | 104W Tc | 6.9A | SWITCHING | 0.8Ohm | 400 ns | SILICON | N-Channel | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 1100pF @ 100V | 42nC @ 10V | 20ns | 32 ns | 20V | 6.9A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPW90R1K2C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 83W | 70 ns | 900V | 83W Tc | 5.1A | SWITCHING | 400 ns | SILICON | N-Channel | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 710pF @ 100V | 28nC @ 10V | 20ns | 40 ns | 20V | 5.1A Tc | 68 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPW50R199CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 139W Tc | SWITCHING | 0.199Ohm | 500V | SILICON | N-Channel | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 1800pF @ 100V | 45nC @ 10V | 17A | 17A Tc | 550V | 40A | 436 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFS3004PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 380W | 23 ns | 4V | 380W Tc | 340A | SWITCHING | 90 ns | SILICON | N-Channel | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 9200pF @ 25V | 240nC @ 10V | 220ns | 130 ns | 20V | 40V | 195A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRF2804SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 300W Tc | N-Channel | 2m Ω @ 75A, 10V | 4V @ 250μA | 6450pF @ 25V | 240nC @ 10V | 75A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLS3034-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.699mm | 9.65mm | 1.4MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 71 ns | 2.5V | 380W Tc | 380A | SWITCHING | 94 ns | SILICON | N-Channel | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 10990pF @ 40V | 180nC @ 4.5V | 590ns | 200 ns | 20V | 40V | 240A | 240A Tc | 1540A | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFSL3004PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.67mm | RoHS Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | DRAIN | Single | 380W | 23 ns | 380W Tc | 340A | SWITCHING | 90 ns | SILICON | N-Channel | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 9200pF @ 25V | 240nC @ 10V | 220ns | 130 ns | 20V | 40V | 195A Ta | 10V | ±20V |
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