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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFZ44NLPBF IRFZ44NLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 49A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 17.5MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 110W 12 ns 4V 3.8W Ta 94W Tc 49A SWITCHING 44 ns SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 60ns 45 ns 20V 55V 55V 4 V 49A Tc 10V ±20V
    BSC036NE7NS3GATMA1 BSC036NE7NS3GATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Cut Tape (CT) 2002 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 14 ns 75V 2.5W Ta 156W Tc 20A SWITCHING 0.0036Ohm 38 ns SILICON N-Channel 3.6m Ω @ 50A, 10V 3.8V @ 110μA 4400pF @ 37.5V 63.4nC @ 10V 18ns 10 ns 20V 100A Tc 400A 260 mJ 10V ±20V
    IRLB8743PBF IRLB8743PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.826mm 8.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-220AB DRAIN Single 140W 23 ns 1.8V 140W Tc 44 ns 150A SWITCHING 25 ns SILICON N-Channel 3.2m Ω @ 40A, 10V 2.35V @ 100μA 5110pF @ 15V 54nC @ 4.5V 92ns 36 ns 20V 30V 30V 1.8 V 78A 78A Tc 620A 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 75A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 8.5MOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 19 ns 4V 140W Tc 75A SWITCHING 38 ns SILICON N-Channel 8.5m Ω @ 51A, 10V 4V @ 100μA 2810pF @ 25V 86nC @ 10V 90ns 54 ns 20V 60V 60V 4 V 75A Tc 99 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2000 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free 62A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 12MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 87W 7.2 ns 2V 87W Tc 65 ns 62A SWITCHING 17.6 ns SILICON N-Channel 12m Ω @ 15A, 10V 2V @ 250μA 2417pF @ 15V 24nC @ 4.5V 50ns 3.7 ns 12V 30V 30V 2 V 62A Tc 248A 2.8V 10V ±12V
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    		 download 18 Weeks Tape & Reel (TR) 2014 OptiMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 71W Tc SWITCHING 0.018Ohm 100V SILICON N-Channel 18m Ω @ 33A, 10V 3.5V @ 33μA 1800pF @ 50V 25nC @ 10V 43A 43A Tc 100V 172A 50 mJ 6V 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 60V 2.5W Ta 46W Tc 64A SWITCHING 0.0066Ohm SILICON N-Channel 6.6m Ω @ 50A, 10V 3.3V @ 20μA 1500pF @ 30V 21nC @ 10V 3ns 20V 15A 64A Tc 256A 21 mJ 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 52A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 19mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 69W 9 ns 1V 107W Tc 46A SWITCHING 20 ns SILICON N-Channel 19m Ω @ 33A, 10V 1V @ 250μA 1600pF @ 25V 50nC @ 4.5V 210ns 54 ns 16V 30V 20A 55A Tc 220A 240 mJ 4.5V 10V ±16V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 4 ns 100V 94W Tc 60A 20 ns SILICON N-Channel 12m Ω @ 60A, 10V 2.1V @ 46μA 3170pF @ 25V 49nC @ 10V 3ns 21 ns 16V 100V 60A Tc 240A 4.5V 10V ±16V
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    		 download 15 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING R-PSSO-G2 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W 11 ns 3V 140W Tc 180A 175°C SWITCHING 0.0024Ohm 51 ns SILICON N-Channel 2.4m Ω @ 90A, 10V 3.9V @ 100μA 4610pF @ 25V 134nC @ 10V 39ns 34 ns 20V 40V 3 V 90A 90A Tc 760A 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 43MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 8.4 ns 2.5W Ta 5.1A SWITCHING 14 ns SILICON N-Channel 43m Ω @ 3.1A, 10V 5V @ 100μA 1647pF @ 75V 38nC @ 10V 3.2ns 8.3 ns 20V 150V 5.1A Ta 529 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 63W 12 ns 600V 63W Tc 7.3A SWITCHING 0.6Ohm 80 ns SILICON N-Channel 600m Ω @ 2.4A, 10V 3.5V @ 200μA 440pF @ 100V 20.5nC @ 10V 9ns 13 ns 20V 7.3A Tc 10V ±20V
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    		 download 26 Weeks Tape & Reel (TR) 2009 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 58W Tc SWITCHING 0.0105Ohm 30V SILICON P-Channel 10.5m Ω @ 50A, 10V 2V @ 85μA 3770pF @ 25V 55nC @ 10V 50A 50A Tc 30V 200A 100 mJ 4.5V 10V +5V, -16V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2003 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 19 ns -40V 75W Tc 73A 0.0089Ohm 24 ns SILICON P-Channel 8.9m Ω @ 70A, 10V 4V @ 120μA 4810pF @ 25V 70nC @ 10V 12ns 31 ns 20V 73A Tc 40V 292A 24 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 5 EAR99 5.9944mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 156W 14 ns 800mV 3.6W Ta 156W Tc 100A SWITCHING 140 ns SILICON N-Channel 0.95m Ω @ 50A, 10V 1.1V @ 150μA 10890pF @ 10V 230nC @ 4.5V 74ns 160 ns 12V 20V 45A 49A Ta 100A Tc 400A 2.5V 10V ±12V
    IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2016 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 115W Tc 0.002Ohm 40V SILICON N-Channel 1.7m Ω @ 50A, 10V 3.4V @ 60μA 4810pF @ 25V 83nC @ 10V 100A 100A Tc 40V 400A 220 mJ 7V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 4.826mm ROHS3 Compliant Lead Free 16A No 5 DirectFET™ Isometric ST No SVHC 506μm 3.95mm 5.7MOhm Surface Mount -40°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 9.7 ns 2.2V 1.4W Ta 42W Tc 55mA SWITCHING 12 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.2V @ 250μA 1360pF @ 10V 17nC @ 4.5V 40ns 4.5 ns 20V 20V 2.2 V 16A Ta 55A Tc 43 mJ 4.5V 10V ±20V
    IRFH7085TRPBF IRFH7085TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 StrongIRFET™ Active 1 (Unlimited) 5 EAR99 6.15mm ROHS3 Compliant Lead Free 8 8-PowerVDFN No SVHC 950μm 5.15mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N5 1 1 DRAIN Single 156W 13 ns 3.7V 156W Tc 23A 150°C SWITCHING 0.0032Ohm 63 ns SILICON N-Channel 3.2m Ω @ 75A, 10V 3.7V @ 150μA 6460pF @ 25V 165nC @ 10V 25ns 23 ns 20V 60V 100A Tc 590A 554 mJ 6V 10V ±20V
    BSO201SPHXUMA1 BSO201SPHXUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 8-SOIC (0.154, 3.90mm Width) No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.6W 21 ns -900mV -20V 1.6W Ta 14.9A 99 ns SILICON P-Channel 8m Ω @ 14.9A, 4.5V 1.2V @ 250μA 9600pF @ 15V 88nC @ 4.5V 99ns 162 ns 12V 9.3A 12A Ta 20V 59.6A 2.5V 4.5V ±12V
    AUIRFR5410TRL AUIRFR5410TRL Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 66W Tc SWITCHING 0.205Ohm 100V SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 13A 13A Tc 100V 52A 194 mJ 10V ±20V
    IRFU9024NPBF IRFU9024NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free -1.6A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 175mOhm Through Hole -55°C~150°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 38W 13 ns -4V 38W Tc 71 ns -11A SWITCHING 23 ns SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 55ns 37 ns 20V -55V -55V -4 V 11A Tc 55V 44A 62 mJ 10V ±20V
    IRFB7545PBF IRFB7545PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 125W 12 ns 3.7V 125W Tc 95A 44 ns N-Channel 5.9m Ω @ 57A, 10V 3.7V @ 100μA 4010pF @ 25V 110nC @ 10V 72ns 43 ns 20V 95A Tc 60V 6V 10V ±20V
    IPD100N04S402ATMA1 IPD100N04S402ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2004 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc 0.002Ohm 40V SILICON N-Channel 2m Ω @ 100A, 10V 4V @ 95μA 9430pF @ 25V 118nC @ 10V 100A 100A Tc 40V 400A 440 mJ 10V ±20V
    IRFU5505PBF IRFU5505PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free -18A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 110Ohm Through Hole -55°C~150°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 57W 12 ns -4V 57W Tc -18A SWITCHING 20 ns SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 28ns 16 ns 20V -55V -55V -4 V 18A Tc 55V 64A 10V ±20V
    IRFZ44ZPBF IRFZ44ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1999 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 51A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.65mm 4.826mm 13.9Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 80W 14 ns 4V 80W Tc 35 ns 51A SWITCHING 33 ns SILICON N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 55V 4 V 51A Tc 200A 86 mJ 10V ±20V
    IRLU120NPBF IRLU120NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 10A No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 185mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 48W 4 ns 2V 48W Tc 10A SWITCHING 23 ns SILICON N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 35ns 22 ns 16V 100V 100V 2 V 10A Tc 85 mJ 4V 10V ±16V
    IRF1010ZSTRLPBF IRF1010ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W 18 ns 140W Tc 75A SWITCHING 0.0075Ohm 36 ns SILICON N-Channel 7.5m Ω @ 75A, 10V 4V @ 250μA 2840pF @ 25V 95nC @ 10V 150ns 92 ns 20V 55V 75A Tc 10V ±20V
    IRL2703PBF IRL2703PBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 24A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 No SVHC 8.77mm 4.69mm 40MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 45W 8.5 ns 1V 45W Tc 97 ns 24A SWITCHING 12 ns SILICON N-Channel 40m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 30V 1 V 24A Tc 96A 77 mJ 4.5V 10V ±16V
    IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Halogen Free 8 ns 100V 136W Tc 90A 42 ns N-Channel 6.6m Ω @ 90A, 10V 2.1V @ 90μA 6250pF @ 25V 98nC @ 10V 6ns 40 ns 16V 90A Tc 4.5V 10V ±16V
    IRFU5305PBF IRFU5305PBF Infineon Technologies $0.00
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    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.6mm ROHS3 Compliant Contains Lead, Lead Free Tin -28A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.1mm 2.3mm 65mOhm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE 9.65mm e3 260 30 Other Transistors 1 DRAIN Single 89W 14 ns -4V 110W Tc -31A SWITCHING 39 ns SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V -4 V 25A 31A Tc 55V 280 mJ 10V ±20V