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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFZ46NSPBF IRFZ46NSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.668mm ROHS3 Compliant Lead Free 53A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.652mm 16.5mOhm Surface Mount 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 120W 14 ns 4V 3.8W Ta 107W Tc 53A SWITCHING 52 ns N-Channel 16.5m Ω @ 28A, 10V 4V @ 250μA 1696pF @ 25V 72nC @ 10V 76ns 57 ns 20V 55V 55V 4 V 53A Tc 10V ±20V
    IRF9530NSPBF IRF9530NSPBF Infineon Technologies $0.00
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    		 download 14 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 79W Tc P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 14A Tc 100V 10V ±20V
    IRFZ44NSPBF IRFZ44NSPBF Infineon Technologies $0.00
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    		 download Tube 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 94W Tc SWITCHING 0.0175Ohm 55V SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 49A 49A Tc 55V 160A 150 mJ 10V ±20V
    IRFS3306PBF IRFS3306PBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free 160A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 2.39mm 6.22mm 4.2MOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) 1 Single 230mW 15 ns 4V 230W Tc 31 ns 160A 40 ns N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 46ns 77 ns 20V 60V 120A Tc 10V ±20V
    SPA20N60CFDXKSA1 SPA20N60CFDXKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2006 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 35W 12 ns 600V 35W Tc 20.7A SWITCHING 0.22Ohm SILICON N-Channel 220m Ω @ 13.1A, 10V 5V @ 1mA 2400pF @ 25V 124nC @ 10V 6.4 ns 20V 20.7A Tc 52A 690 mJ 10V ±20V
    AUIRLS4030TRL AUIRLS4030TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W Tc SWITCHING 0.0043Ohm 100V SILICON N-Channel 4.3m Ω @ 110A, 10V 2.5V @ 250μA 11360pF @ 50V 130nC @ 4.5V 180A 180A Tc 100V 730A 305 mJ 4.5V 10V ±16V
    IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 35 ns 120V 300W Tc 120A SWITCHING 0.0041Ohm 70 ns SILICON N-Channel 4.1m Ω @ 100A, 10V 4V @ 270μA 13800pF @ 60V 211nC @ 10V 52ns 21 ns 20V 120A Tc 480A 900 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 14 ns 650V 34W Tc 12A SWITCHING 0.095Ohm 60 ns SILICON N-Channel 95m Ω @ 11.8A, 10V 4V @ 590μA 2140pF @ 400V 45nC @ 10V 12ns 7 ns 20V 12A Tc 100A 118 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Contains Lead Tin No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 AUIRFS3004 R-PSSO-G6 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 380W 23 ns 4V 380W Tc 240A SWITCHING 91 ns SILICON N-Channel 1.25m Ω @ 195A, 10V 4V @ 250μA 9130pF @ 25V 240nC @ 10V 240ns 160 ns 20V 40V 400A 240A Tc 290 mJ 10V ±20V
    IPA65R190E6XKSA1 IPA65R190E6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 12 ns 650V 34W Tc 20.8A SWITCHING 112 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 3.5V @ 730μA 1620pF @ 100V 73nC @ 10V 11ns 10 ns 20V 20.2A Tc 66A 485 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 18 ns 230W Tc 150A SWITCHING 0.0049Ohm 48 ns SILICON N-Channel 4.9m Ω @ 75A, 10V 4V @ 250μA 4780pF @ 25V 180nC @ 10V 110ns 82 ns 20V 55V 150A Tc 600A 270 mJ 10V ±20V
    IPP100N08S207AKSA1 IPP100N08S207AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2006 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 26 ns 75V 300W Tc 100A 61 ns SILICON N-Channel 7.1m Ω @ 80A, 10V 4V @ 250μA 4700pF @ 25V 200nC @ 10V 51ns 30 ns 20V 100A Tc 400A 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 195W Tc 21.3A SWITCHING 0.165Ohm SILICON N-Channel 165m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 21.3A Tc 67A 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2009 Automotive, AEC-Q101, OptiMOS™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant 3 TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 30 ns 60V 250W Tc 120A 0.0024Ohm 60 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 4V @ 200μA 21900pF @ 25V 270nC @ 10V 5ns 15 ns 20V 120A Tc 480A 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 15 ns 230W Tc 120A SWITCHING 0.0042Ohm 40 ns SILICON N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 125nC @ 10V 76ns 77 ns 20V 60V 120A Tc 620A 10V ±20V
    AUIRF3805 AUIRF3805 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm 3.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 150 ns 2V 300W Tc 160A SWITCHING 93 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 87 ns 20V 55V 160A Tc 890A 940 mJ 10V ±20V
    IPP80N06S2LH5AKSA2 IPP80N06S2LH5AKSA2 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB 19 ns 55V 300W Tc 80A 0.0065Ohm 75 ns SILICON N-Channel 5m Ω @ 80A, 10V 2V @ 250μA 5000pF @ 25V 190nC @ 10V 23ns 22 ns 20V 80A Tc 700 mJ 4.5V 10V ±20V
    AUIRF2903Z AUIRF2903Z Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 290W 24 ns 2V 290W Tc 160A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 250μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 2 V 160A Tc 820 mJ 10V ±20V
    AUIRL1404ZSTRL AUIRL1404ZSTRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.0031Ohm 40V SILICON N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 160A 160A Tc 40V 790A 490 mJ 4.5V 10V ±16V
    AUIRF3305 AUIRF3305 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.72mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 330W 16 ns 2V 330W Tc 140A SWITCHING 0.008Ohm 43 ns SILICON N-Channel 8m Ω @ 75A, 10V 4V @ 250μA 3650pF @ 25V 150nC @ 10V 88ns 34 ns 20V 55V 140A Tc 560A 860 mJ 10V ±20V
    IRFBA1404PPBF IRFBA1404PPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.9982mm ROHS3 Compliant Lead Free 206A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-273AA 15mm 5mm 3.7MOhm Through Hole -40°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 DRAIN Single 300W 17 ns 300W Tc 206A SWITCHING 72 ns SILICON N-Channel 3.7m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 140ns 26 ns 20V 40V 95A 206A Tc 650A 480 mJ 10V ±20V
    IPP100N06S2L05AKSA2 IPP100N06S2L05AKSA2 Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Tube 1999 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE IPP100N06S2L-05 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 TO-220AB Halogen Free Single 300W 18 ns 55V 300W Tc 100A 0.0059Ohm 98 ns SILICON N-Channel 4.7m Ω @ 80A, 10V 2V @ 250μA 5660pF @ 25V 230nC @ 10V 25ns 24 ns 20V 55V 100A Tc 400A 810 mJ 4.5V 10V ±20V
    IPB80N06S2H5ATMA2 IPB80N06S2H5ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 1997 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 300W 23 ns 55V 300W Tc 80A 0.0052Ohm 48 ns SILICON N-Channel 5.2m Ω @ 80A, 10V 4V @ 230μA 4400pF @ 25V 155nC @ 10V 23ns 22 ns 20V 55V 80A Tc 700 mJ 10V ±20V
    SPA16N50C3XKSA1 SPA16N50C3XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 16A 3 AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ 560V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 10 ns 500V 34W Tc 16A SWITCHING 0.28Ohm 50 ns SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 8ns 20V 16A Tc 48A 460 mJ 10V ±20V
    IRFS4321TRRPBF IRFS4321TRRPBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 330W 18 ns 350W Tc 83A SWITCHING 0.015Ohm 25 ns SILICON N-Channel 15m Ω @ 33A, 10V 5V @ 250μA 4460pF @ 25V 110nC @ 10V 60ns 35 ns 30V 150V 75A 85A Tc 120 mJ 10V ±20V
    IPB80N04S2H4ATMA2 IPB80N04S2H4ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Tape & Reel (TR) 2008 yes Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant Tin 3 TO-263-3 not_compliant ENHANCEMENT MODE e3 GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 300W AEC-Q101 1 DRAIN Halogen Free N-CHANNEL Single 300W 23 ns 40V 80A METAL-OXIDE SEMICONDUCTOR 46 ns 63ns 22 ns 20V 40V 40V 660 mJ 4.4nF 3.7 mΩ
    IRFI7536GPBF IRFI7536GPBF Infineon Technologies $0.00
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    		 14 Weeks Through Hole Tube 2013 HEXFET® Not For New Designs 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 4V 75W Tc 86A N-Channel 3.4m Ω @ 75A, 10V 4V @ 150μA 6600pF @ 48V 195nC @ 10V 86A Tc 60V 10V ±20V
    IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 136W 11 ns 200V 136W Tc 34A SWITCHING 0.032Ohm 21 ns SILICON N-Channel 32m Ω @ 34A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 9ns 4 ns 20V 34A Tc 10V ±20V
    BSS84P-E6327 BSS84P-E6327 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2002 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead -170mA 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-236-3, SC-59, SOT-23-3 unknown Surface Mount -55°C~150°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 260 40 3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE -930mV 360mW 360mW Ta 170mA SWITCHING 8Ohm SILICON P-Channel 8 Ω @ 170mA, 10V 2V @ 20μA 19pF @ 25V 1.5nC @ 10V 16.2ns 20V 170mA Ta 60V 4.5V 10V ±20V
    IRFB4228PBF IRFB4228PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm ROHS3 Compliant Lead Free -83A No 3 TO-220-3 No SVHC 16.51mm 4.82mm 15MOhm Through Hole -40°C~175°C TJ -150V MOSFET (Metal Oxide) 1 Single 330W 18 ns 3V 15mOhm TO-220AB 330W Tc 110 ns 83A 24 ns N-Channel 15mOhm @ 33A, 10V 5V @ 250μA 4530pF @ 25V 107nC @ 10V 30V 150V 150V 30 V 83A Tc 150V 4.53nF 10V ±30V 15 mΩ