Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRLS3036TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.652mm | 1.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 66 ns | 2.5V | 380W Tc | 270A | SWITCHING | 110 ns | SILICON | N-Channel | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 11210pF @ 50V | 140nC @ 4.5V | 220ns | 110 ns | 16V | 60V | 2.5 V | 195A Tc | 290 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
IRFS3004TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.652mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 380W | 23 ns | 380W Tc | 240A | SWITCHING | 90 ns | SILICON | N-Channel | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 9200pF @ 25V | 240nC @ 10V | 220ns | 130 ns | 20V | 40V | 195A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPA90R1K0C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 32W | 70 ns | 32W Tc | 5.7A | SWITCHING | 1Ohm | 400 ns | SILICON | N-Channel | 1 Ω @ 3.3A, 10V | 3.5V @ 370μA | 850pF @ 100V | 34nC @ 10V | 20ns | 35 ns | 20V | 900V | 900V | 3 V | 5.7A Tc | 12A | 97 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPL65R070C7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ C7 | yes | Active | 2A (4 Weeks) | 4 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 14 ns | 650V | 169W Tc | 28A | SWITCHING | 0.07Ohm | 92 ns | SILICON | N-Channel | 70m Ω @ 8.5A, 10V | 4V @ 850μA | 3020pF @ 100V | 64nC @ 10V | 6ns | 11 ns | 20V | 28A Tc | 171 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPDD60R050G7XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | CoolMOS™ G7 | Active | 1 (Unlimited) | 10 | ROHS3 Compliant | 10-PowerSOP Module | 2.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | YES | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252 | 278W | 22 ns | 278W Tc | 47A | 150°C | SWITCHING | 0.05Ohm | 72 ns | SILICON | N-Channel | 50m Ω @ 15.9A, 10V | 4V @ 800μA | 2670pF @ 400V | 68nC @ 10V | 20V | 600V | 47A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IGT60R190D1SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerSFN | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 55.5W Tc | N-Channel | 1.6V @ 960μA | 157pF @ 400V | 12.5A Tc | 600V | -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP037N08N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | FET General Purpose Power | 1 | TO-220AB | Halogen Free | Single | 214W | 23 ns | 80V | 214W Tc | 100A | SWITCHING | 45 ns | SILICON | N-Channel | 3.75m Ω @ 100A, 10V | 3.5V @ 155μA | 8110pF @ 40V | 117nC @ 10V | 79ns | 14 ns | 20V | 80V | 100A Tc | 400A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFP2907ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 90A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 4.5Ohm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 310W | 19 ns | 4V | 310W Tc | 61 ns | 90A | SWITCHING | 97 ns | SILICON | N-Channel | 4.5m Ω @ 90A, 10V | 4V @ 250μA | 7500pF @ 25V | 270nC @ 10V | 140ns | 100 ns | 20V | 75V | 75V | 4 V | 170A | 90A Tc | 680A | 690 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IRL520NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 10A | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 8.77mm | 4.69mm | 220mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 48W | 4 ns | 2V | 48W Tc | 160 ns | 10A | SWITCHING | 23 ns | SILICON | N-Channel | 180m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 35ns | 22 ns | 16V | 100V | 100V | 2 V | 10A Tc | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||
IRLZ44NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 47A | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.69mm | 22mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1 | 1 | TO-220AB | DRAIN | Single | 83W | 11 ns | 2V | 3.8W Ta 110W Tc | 120 ns | 47A | 175°C | SWITCHING | 26 ns | SILICON | N-Channel | 22m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 55V | 2 V | 47A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||
IRLZ24NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | PCB, Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | 17A | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 60mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 45W | 7.1 ns | 2V | 45W Tc | 90 ns | 18A | SWITCHING | 20 ns | SILICON | N-Channel | 60m Ω @ 11A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | 29 ns | 16V | 55V | 55V | 2 V | 18A Tc | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||
BSC040N10NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 139W | 13 ns | 100V | 2.5W Ta 139W Tc | 100A | 150°C | SWITCHING | 0.004Ohm | 32 ns | SILICON | N-Channel | 4m Ω @ 50A, 10V | 3.8V @ 95μA | 5300pF @ 50V | 72nC @ 10V | 9ns | 10 ns | 20V | 100V | 100A Tc | 400A | 200 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFS7434TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 294W | 24 ns | 294W Tc | 195A | SWITCHING | 40V | 115 ns | SILICON | N-Channel | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 10820pF @ 25V | 324nC @ 10V | 68ns | 68 ns | 20V | 195A Tc | 40V | 780A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPB011N04NGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | No | 7 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 7 | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 40 ns | 40V | 250W Tc | 180A | SWITCHING | 63 ns | SILICON | N-Channel | 1.1m Ω @ 100A, 10V | 4V @ 200μA | 20000pF @ 20V | 250nC @ 10V | 10ns | 13 ns | 20V | 180A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSC670N25NSFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | SWITCHING | 0.067Ohm | 250V | SILICON | N-Channel | 67m Ω @ 24A, 10V | 4V @ 90μA | 2410pF @ 125V | 30nC @ 10V | 24A | 24A Tc | 250V | 96A | 69 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFH5007TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.1468mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 990.6μm | 5.15mm | 5.9MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 10 ns | 3.6W Ta 156W Tc | 100A | SWITCHING | 30 ns | SILICON | N-Channel | 5.9m Ω @ 50A, 10V | 4V @ 150μA | 4290pF @ 25V | 98nC @ 10V | 14ns | 11 ns | 20V | 75V | 2 V | 17A Ta 100A Tc | 400A | 250 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRLH5030TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.1468mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 990.6μm | 5.15mm | 9.9MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 21 ns | 2.5V | 3.6W Ta 156W Tc | 100A | SWITCHING | 41 ns | SILICON | N-Channel | 9m Ω @ 50A, 10V | 2.5V @ 150μA | 5185pF @ 50V | 94nC @ 10V | 72ns | 41 ns | 16V | 100V | 2.5 V | 13A Ta 100A Tc | 400A | 230 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
IPD320N20N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 200V | 136W Tc | 34A | SWITCHING | SILICON | N-Channel | 32m Ω @ 34A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 34A Tc | 190 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRLS3034TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | No | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 65 ns | 375W Tc | 195A | SWITCHING | 0.0017Ohm | 97 ns | SILICON | N-Channel | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 10315pF @ 25V | 162nC @ 4.5V | 827ns | 355 ns | 20V | 40V | 195A Tc | 255 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFH5025TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 9 ns | 5V | 3.6W Ta 8.3W Tc | 32A | SWITCHING | 17 ns | SILICON | N-Channel | 100m Ω @ 5.7A, 10V | 5V @ 150μA | 2150pF @ 50V | 56nC @ 10V | 6.3ns | 6.1 ns | 20V | 250V | 3.8A Ta | 46A | 320 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFS4115TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | GULL WING | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 380W | 18 ns | 380W Tc | 105A | SWITCHING | 0.0118Ohm | 37 ns | SILICON | N-Channel | 11.8m Ω @ 63A, 10V | 5V @ 250μA | 5320pF @ 50V | 110nC @ 10V | 50ns | 23 ns | 20V | 150V | 105A Tc | 420A | 230 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPL60R199CPAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | CoolMOS™ | no | Not For New Designs | 2A (4 Weeks) | 4 | EAR99 | ROHS3 Compliant | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | S-PSSO-N4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 139W Tc | SWITCHING | 0.199Ohm | 600V | SILICON | N-Channel | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 1520pF @ 100V | 32nC @ 10V | 16.4A Tc | 650V | 51A | 436 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPB160N04S203ATMA4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 300W Tc | 160A | 0.0029Ohm | SILICON | N-Channel | 2.9m Ω @ 60A, 10V | 4V @ 250μA | 5300pF @ 25V | 170nC @ 10V | 160A Tc | 640A | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFS4310TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | Tin | 140A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 7MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 26 ns | 4V | 300W Tc | 68 ns | 140A | SWITCHING | 68 ns | SILICON | N-Channel | 7m Ω @ 75A, 10V | 4V @ 250μA | 7670pF @ 50V | 250nC @ 10V | 110ns | 78 ns | 20V | 100V | 100V | 4 V | 75A | 130A Tc | 550A | 980 mJ | 10V | ±20V | |||||||||||||||||||||||||
IPB014N06NATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | GULL WING | 3 | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 214W | 22 ns | 2.8V | 60V | 3W Ta 214W Tc | 180A | SWITCHING | 0.0014Ohm | 47 ns | SILICON | N-Channel | 1.4m Ω @ 100A, 10V | 2.8V @ 143μA | 7800pF @ 30V | 106nC @ 10V | 18ns | 14 ns | 20V | 60V | 34A | 34A Ta 180A Tc | 420 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPB016N06L3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | LOGIC LEVEL COMPATIBLE | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 35 ns | 60V | 250W Tc | 180A | SWITCHING | 131 ns | SILICON | N-Channel | 1.6m Ω @ 100A, 10V | 2.2V @ 196μA | 28000pF @ 30V | 166nC @ 4.5V | 79ns | 38 ns | 20V | 180A Tc | 634 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFS4229TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.65mm | 48MOhm | Surface Mount | -40°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 330W | 18 ns | 330W Tc | 45A | SWITCHING | 30 ns | SILICON | N-Channel | 48m Ω @ 26A, 10V | 5V @ 250μA | 4560pF @ 25V | 110nC @ 10V | 31ns | 21 ns | 30V | 250V | 45A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
IRF200S234 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 417W Tc | SWITCHING | 0.0169Ohm | 200V | SILICON | N-Channel | 16.9m Ω @ 51A, 10V | 5V @ 250μA | 6484pF @ 50V | 162nC @ 10V | 90A | 90A | 200V | 312A | 693 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IPB117N20NFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.82mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 300W | 13 ns | 3V | 200V | 300W Tc | 84A | 175°C | 24 ns | SILICON | N-Channel | 11.7m Ω @ 84A, 10V | 4V @ 270μA | 6650pF @ 100V | 87nC @ 10V | 10ns | 8 ns | 20V | 200V | 84A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPB65R099C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Cut Tape (CT) | 2008 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10.6 ns | 650V | 278W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 127nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 115A | 845 mJ | 10V | ±20V |
Products