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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    SPP04N50C3XKSA1 SPP04N50C3XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole 2005 Last Time Buy 1 (Unlimited) 150°C -55°C 10.36mm ROHS3 Compliant Contains Lead 4.5A 3 TO-220 20.7mm 4.57mm 560V 1 50W 1 Single 50W 10 ns 500V 850mOhm 4.5A 150°C 70 ns 5ns 20V 500V 500V 470pF
    IPB22N03S4L15ATMA1 IPB22N03S4L15ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 31W Tc 22A 0.0146Ohm SILICON N-Channel 14.6m Ω @ 22A, 10V 2.2V @ 10μA 980pF @ 25V 14nC @ 10V 22A Tc 88A 20 mJ 4.5V 10V ±16V
    AUIRFR540ZTRL AUIRFR540ZTRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED YES FET General Purpose Power Single 91W Tc N-Channel 28.5m Ω @ 21A, 10V 4V @ 50μA 1690pF @ 25V 59nC @ 10V 35A 35A Tc 100V 10V ±20V
    IPA60R600E6XKSA1 IPA60R600E6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 28W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 2.4A, 10V 3.5V @ 200μA 440pF @ 100V 20.5nC @ 10V 7.3A Tc 600V 19A 133 mJ 10V ±20V
    IRF3710LPBF IRF3710LPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 57A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm 23MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 200W 12 ns 200W Tc 57A SWITCHING 45 ns SILICON N-Channel 23m Ω @ 28A, 10V 4V @ 250μA 3130pF @ 25V 130nC @ 10V 58ns 47 ns 20V 100V 49A 57A Tc 280 mJ 10V ±20V
    BSB012NE2LXIXUMA1 BSB012NE2LXIXUMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ Active 3 (168 Hours) EAR99 ROHS3 Compliant Lead Free Nickel 3 3-WDSON Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) e4 NOT SPECIFIED NOT SPECIFIED Halogen Free Single 2.8W Ta 57W Tc 170A 34 ns N-Channel 1.2m Ω @ 30A, 10V 2V @ 250μA 5852pF @ 12V 82nC @ 10V 6ns 4.6 ns 20V 25V 170A Tc 4.5V 10V ±20V
    IPI147N12N3GAKSA1 IPI147N12N3GAKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 OptiMOS™ no Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 107W 16 ns 120V 107W Tc 56A SWITCHING 24 ns SILICON N-Channel 14.7m Ω @ 56A, 10V 4V @ 61μA 3220pF @ 60V 49nC @ 10V 9ns 4 ns 20V 56A Ta 224A 90 mJ 10V ±20V
    BSC019N02KSGAUMA1 BSC019N02KSGAUMA1 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 104W 15 ns 20V 2.8W Ta 104W Tc 100A SWITCHING 0.003Ohm 95 ns SILICON N-Channel 1.95m Ω @ 50A, 4.5V 1.2V @ 350μA 13000pF @ 10V 85nC @ 4.5V 187ns 8 ns 12V 30A 30A Ta 100A Tc 200A 2.5V 4.5V ±12V
    IRF2807STRRPBF IRF2807STRRPBF Infineon Technologies $0.00
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    		 download 39 Weeks Tape & Reel (TR) 2002 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 230W Tc SWITCHING 0.013Ohm 75V SILICON N-Channel 13m Ω @ 43A, 10V 4V @ 250μA 3820pF @ 25V 160nC @ 10V 75A 82A Tc 75V 280A 340 mJ 10V ±20V
    IPI80N06S405AKSA2 IPI80N06S405AKSA2 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole 2009 yes Active 1 (Unlimited) 3 175°C -55°C ROHS3 Compliant 3 TO-262-3 not_compliant 2.387001g ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 107W 1 SINGLE WITH BUILT-IN DIODE TO-262AA DRAIN N-CHANNEL 20 ns 60V 80A 0.0057Ohm METAL-OXIDE SEMICONDUCTOR 35 ns 5ns 8 ns 20V 60V 6.5nF 5.7 mΩ
    IRF8707GTRPBF IRF8707GTRPBF Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Obsolete 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 2.5W 6.7 ns 1.8V 2.5W Ta 11A 7.3 ns N-Channel 11.9m Ω @ 11A, 10V 2.35V @ 25μA 760pF @ 15V 9.3nC @ 4.5V 7.9ns 4.4 ns 20V 30V 1.8 V 11A Ta 4.5V 10V ±20V
    IRFB4115GPBF IRFB4115GPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.826mm 11MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 380W 18 ns 380W Tc 104A SWITCHING 41 ns SILICON N-Channel 11m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 73ns 39 ns 20V 150V 3 V 104A Tc 420A 220 mJ 10V ±20V
    IRFS3004-7PPBF IRFS3004-7PPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 1.25MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 380W 23 ns 4V 380W Tc 400A SWITCHING 91 ns SILICON N-Channel 1.25m Ω @ 195A, 10V 4V @ 250μA 9130pF @ 25V 240nC @ 10V 240ns 160 ns 20V 40V 240A 240A Tc 290 mJ 10V ±20V
    BSZ042N04NSGATMA1 BSZ042N04NSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2003 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED, HIGH VOLTAGE 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 14 ns 40V 2.1W Ta 69W Tc 40A SWITCHING 0.0042Ohm 20 ns SILICON N-Channel 4.2m Ω @ 20A, 10V 4V @ 36μA 3700pF @ 20V 46nC @ 10V 3.4ns 4.2 ns 20V 40A Tc 160A 150 mJ 10V ±20V
    IRF3415SPBF IRF3415SPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.042Ohm 150V SILICON N-Channel 42m Ω @ 22A, 10V 4V @ 250μA 2400pF @ 25V 200nC @ 10V 43A 43A Tc 150V 150A 590 mJ 10V ±20V
    IRFI1010NPBF IRFI1010NPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 49A 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 12mOhm Through Hole -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 47W 11 ns 4V 58W Tc 49A SWITCHING 40 ns SILICON N-Channel 12m Ω @ 26A, 10V 4V @ 250μA 2900pF @ 25V 130nC @ 10V 66ns 46 ns 20V 55V 44A 49A Tc 290A 10V ±20V
    IRFU9120NPBF IRFU9120NPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 1998 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free -6.6A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 480MOhm Through Hole -55°C~175°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 39W 14 ns 40W Tc -6.6A SWITCHING 28 ns SILICON P-Channel 480m Ω @ 3.9A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 47ns 31 ns 20V -100V -100V -4 V 6.5A 6.6A Tc 100V 26A 10V ±20V
    IRLU2703PBF IRLU2703PBF Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 23A No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 45mOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 38W 8.5 ns 1V 45W Tc 23A SWITCHING 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 30V 1 V 23A Tc 96A 77 mJ 4.5V 10V ±16V
    IRFU3710ZPBF IRFU3710ZPBF Infineon Technologies $0.00
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    		 Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 6.6mm RoHS Compliant Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.1mm 2.3mm 18MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 9.65mm e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 140W 14 ns 4V 140W Tc 53 ns 42A SWITCHING 53 ns SILICON N-Channel 18m Ω @ 33A, 10V 4V @ 250μA 2930pF @ 25V 100nC @ 10V 43ns 42 ns 20V 100V 100V 4 V 56A 42A Tc 220A 150 mJ 10V ±20V
    IRFR18N15DPBF IRFR18N15DPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.125Ohm 150V SILICON N-Channel 125m Ω @ 11A, 10V 5.5V @ 250μA 900pF @ 25V 43nC @ 10V 18A 18A Tc 150V 72A 200 mJ 10V ±30V
    IRLR7821TRPBF IRLR7821TRPBF Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE THROUGH-HOLE 260 30 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-251AA DRAIN 75W Tc SWITCHING 0.01Ohm 30V SILICON N-Channel 10m Ω @ 15A, 10V 1V @ 250μA 1030pF @ 15V 14nC @ 4.5V 65A 65A Tc 30V 260A 230 mJ 4.5V 10V ±20V
    IRLU2905ZPBF IRLU2905ZPBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 110W 14 ns 1V 22 ns 110W Tc 60A SWITCHING 24 ns SILICON N-Channel 13.5m Ω @ 36A, 10V 3V @ 250μA 1570pF @ 25V 35nC @ 5V 130ns 33 ns 16V 55V 55V 42A Tc 240A 85 mJ 4.5V 10V ±16V
    IRLR3705ZPBF IRLR3705ZPBF Infineon Technologies $0.00
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    		 download 20 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 130W Tc N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 42A Tc 55V 4.5V 10V ±16V
    IRFL024ZPBF IRFL024ZPBF Infineon Technologies $0.00
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    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.0575Ohm 55V SILICON N-Channel 57.5m Ω @ 3.1A, 10V 4V @ 250μA 340pF @ 25V 14nC @ 10V 5.1A 5.1A Ta 55V 10V ±20V
    IRF7807APBF IRF7807APBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 8 4.9784mm RoHS Compliant Contains Lead, Lead Free 6.6A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 25MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 6.3 mm Single 2.5W 12 ns 1V 2.5W Ta 8.3A SWITCHING 25 ns SILICON N-Channel 25m Ω @ 7A, 4.5V 1V @ 250μA 17nC @ 5V 17ns 6 ns 12V 30V 30V 1 V 8.3A Ta 66A 4.5V ±12V
    IRFU2905ZPBF IRFU2905ZPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 6.7056mm RoHS Compliant Lead Free 42A 3 TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) 110W 14 ns 14.5mOhm IPAK (TO-251) 110W Tc 59A 31 ns N-Channel 14.5mOhm @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 66ns 35 ns 20V 55V 42A Tc 55V 1.38nF 10V ±20V 14.5 mΩ
    IRL3716PBF IRL3716PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C RoHS Compliant Lead Free 180A 3 TO-220-3 No SVHC 4Ohm Through Hole -55°C~175°C TJ 20V MOSFET (Metal Oxide) Single 210W 18 ns 3V 4.8mOhm TO-220AB 210W Tc 180A 38 ns N-Channel 4mOhm @ 90A, 10V 3V @ 250μA 5090pF @ 10V 79nC @ 4.5V 140ns 36 ns 20V 20V 20V 3 V 180A Tc 20V 5.09nF 4.5V 10V ±20V 4 mΩ
    IRF630NSTRRPBF IRF630NSTRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 82W 7.9 ns 82W Tc 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 9.3A Tc 94 mJ 10V ±20V
    IPD20N03L IPD20N03L Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) 2 SMD/SMT EAR99 Non-RoHS Compliant Contains Lead 30A AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC unknown Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 255 NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 60W 1.6V 60W Tc 30A SWITCHING SILICON N-Channel 20m Ω @ 15A, 10V 2V @ 25μA 700pF @ 25V 11nC @ 5V 20V 30V 1.6 V 30A Tc 4.5V 10V ±20V
    IRF3717PBF IRF3717PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 20A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 4.4MOhm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 2.5W 12 ns 2V 2.5W Ta 32 ns 20A SWITCHING 15 ns SILICON N-Channel 4.4m Ω @ 20A, 10V 2.45V @ 250μA 2890pF @ 10V 33nC @ 4.5V 14ns 6 ns 20V 20V 2 V 20A Ta 32 mJ 4.5V 10V ±20V