Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SI7110DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 4.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 12 ns | 2.5V | 1.5W Ta | 20A | SWITCHING | 36 ns | SILICON | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 21nC @ 4.5V | 10ns | 10 ns | 20V | 20V | 13.5A Ta | 60A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SIR182DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 69.4W Tc | SWITCHING | 0.0028Ohm | 60V | SILICON | N-Channel | 2.8m Ω @ 15A, 10V | 3.6V @ 250μA | 3250pF @ 30V | 64nC @ 10V | 117A | 60A Tc | 60V | 200A | 61.25 mJ | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SI7112DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 10 ns | 600mV | 1.5W Ta | 11.3A | SWITCHING | 0.0075Ohm | 30V | 65 ns | SILICON | N-Channel | 7.5m Ω @ 17.8A, 10V | 1.5V @ 250μA | 2610pF @ 15V | 27nC @ 4.5V | 10ns | 10 ns | 12V | 11.3A Tc | 30V | 60A | 20 mJ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||
IRFU110PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 540mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 25W | 6.9 ns | 4V | 25W Tc | 4.3A | SWITCHING | 15 ns | SILICON | N-Channel | 540m Ω @ 900mA, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 4.3A Tc | 75 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRLU014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | 7.7A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 200mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 9.3 ns | 2V | 200mOhm | TO-251AA | 2.5W Ta 25W Tc | 7.7A | 17 ns | N-Channel | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 7.7A Tc | 60V | 400pF | 4V 5V | ±10V | 200 mΩ | |||||||||||||||||||||||||||||||||||||||
IRFBF30PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 3.7Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | 4V | 3.7Ohm | TO-220AB | 125W Tc | 3.6A | 90 ns | N-Channel | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 1200pF @ 25V | 78nC @ 10V | 25ns | 30 ns | 20V | 4 V | 3.6A Tc | 900V | 1.2nF | 10V | ±20V | 3.7 Ω | ||||||||||||||||||||||||||||||||||||||||
SIHF28N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | 123mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | ISOLATED | Single | 24 ns | 39W Tc | 28A | SWITCHING | 82 ns | SILICON | N-Channel | 123m Ω @ 14A, 10V | 4V @ 250μA | 2714pF @ 100V | 120nC @ 10V | 40ns | 39 ns | 20V | 600V | 28A Tc | 75A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
SIHG33N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 278W | 56 ns | 2V | 99mOhm | TO-247AC | 278W Tc | 33A | 150 ns | N-Channel | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 3508pF @ 100V | 150nC @ 10V | 90ns | 80 ns | 20V | 600V | 33A Tc | 600V | 3.508nF | 10V | ±30V | 99 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
SIHP28N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 250W Tc | 28A | SWITCHING | 0.117Ohm | 650V | SILICON | N-Channel | 117m Ω @ 14A, 10V | 4V @ 250μA | 3249pF @ 100V | 146nC @ 10V | 28A Tc | 650V | 87A | 427 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7002K-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 150°C | -55°C | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.397mm | 2Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 350mW | 25 ns | 2.5V | 2Ohm | SOT-23-3 (TO-236) | 350mW Ta | 300mA | 150°C | 35 ns | N-Channel | 2Ohm @ 500mA, 10V | 2.5V @ 250μA | 30pF @ 25V | 0.6nC @ 4.5V | 20V | 60V | 2 V | 300mA Ta | 60V | 30pF | 4.5V 10V | ±20V | 2 Ω | |||||||||||||||||||||||||||||||||||||||||
SIHB22N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2013 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 3 | R-PSSO-G2 | 1 | 1 | Single | 18 ns | 227W Tc | 21A | SWITCHING | 600V | 66 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 68ns | 54 ns | 20V | 21A Tc | 600V | 56A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
SIHP22N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2012 | E | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | TO-220AB | Single | 227W | 18 ns | 2V | 227W Tc | 21A | SWITCHING | 600V | 59 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 68ns | 54 ns | 20V | 21A Tc | 600V | 56A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
SIHP12N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-220-3 | Unknown | 555mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 208W | 18 ns | 3V | 208W Tc | 12A | SWITCHING | 23 ns | SILICON | N-Channel | 555m Ω @ 4A, 10V | 5V @ 250μA | 1375pF @ 25V | 48nC @ 10V | 35ns | 6 ns | 500V | 12A Tc | 28A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
IRFZ14PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 200mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 36W | 10 ns | 2V | 43W Tc | 140 ns | 10A | SWITCHING | 13 ns | SILICON | N-Channel | 200m Ω @ 6A, 10V | 4V @ 250μA | 300pF @ 25V | 11nC @ 10V | 50ns | 19 ns | 20V | 60V | 4 V | 10A Tc | 40A | 47 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
SIR680DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-N5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 16 ns | 104W Tc | 32.8A | 150°C | SWITCHING | 0.0029Ohm | 30 ns | SILICON | N-Channel | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 5150pF @ 40V | 81nC @ 7.5V | 20V | 80V | 100A Tc | 200A | 80 mJ | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFD9120PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.2738mm | ROHS3 Compliant | Lead Free | -1A | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | 600mOhm | Through Hole | -55°C~175°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | 1 | DRAIN | Single | 1.3W | 9.6 ns | -4V | 1.3W Ta | 200 ns | -1A | SWITCHING | 21 ns | SILICON | P-Channel | 600m Ω @ 600mA, 10V | 4V @ 250μA | 390pF @ 25V | 18nC @ 10V | 29ns | 29 ns | 20V | 100V | -4 V | 1A | 1A Ta | 8A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFU420PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | Lead Free | 2.4A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 3Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 42W | 8 ns | 4V | 2.5W Ta 42W Tc | 2.4A | SWITCHING | 33 ns | SILICON | N-Channel | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 360pF @ 25V | 19nC @ 10V | 8.6ns | 16 ns | 20V | 500V | 2.4A Tc | 8A | 400 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IRFU310PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 3.6Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 7.9 ns | 4V | 3.6Ohm | TO-251AA | 2.5W Ta 25W Tc | 1.7A | 150°C | 21 ns | N-Channel | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 170pF @ 25V | 12nC @ 10V | 9.9ns | 11 ns | 20V | 400V | 1.7A Tc | 400V | 170pF | 10V | ±20V | 3.6 Ω | ||||||||||||||||||||||||||||||||||||||||
SUD70090E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 2017 | ThunderFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 125W Tc | 50A | SWITCHING | 0.0089Ohm | 100V | SILICON | N-Channel | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 1950pF @ 50V | 50nC @ 10V | 50A Tc | 100V | 120A | 80 mJ | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI3469DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 1.14W | 10 ns | -1V | 1.14W Ta | -6.7A | SWITCHING | 0.03Ohm | 50 ns | SILICON | P-Channel | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 30nC @ 10V | 12ns | 35 ns | 20V | -20V | -1 V | 5A | 5A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SI4386DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Power | 1 | Single | 12 ns | 2V | 1.47W Ta | 16A | SWITCHING | 0.007Ohm | 30V | 35 ns | SILICON | N-Channel | 7m Ω @ 16A, 10V | 2.5V @ 250μA | 18nC @ 4.5V | 9ns | 9 ns | 20V | 11A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI8413DB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 1.6mm | ROHS3 Compliant | No | 4 | 4-XFBGA, CSPBGA | 360μm | 1.6mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 40 | 4 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 1.47W | 31 ns | 1.47W Ta | -6.5A | SWITCHING | 0.063Ohm | 20V | 105 ns | SILICON | P-Channel | 48m Ω @ 1A, 4.5V | 1.4V @ 250μA | 21nC @ 4.5V | 50ns | 50 ns | 12V | 4.8A Ta | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
IRFR9010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 25W | 6.1 ns | 25W Tc | 5.3A | SWITCHING | 0.5Ohm | 13 ns | SILICON | P-Channel | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 240pF @ 25V | 9.1nC @ 10V | 47ns | 35 ns | 20V | -50V | 5.3A Tc | 50V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
SIHG25N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | 145mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-247AC | Single | 19 ns | 250W Tc | 26A | SWITCHING | 57 ns | SILICON | N-Channel | 145m Ω @ 12A, 10V | 4V @ 250μA | 1980pF @ 100V | 86nC @ 10V | 36ns | 29 ns | 20V | 500V | 26A Tc | 50A | 273 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
SIHU6N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-251-3 Long Leads, IPak, TO-251AB | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | DRAIN | Single | 78W | 78W Tc | 7A | SWITCHING | 0.6Ohm | 30 ns | SILICON | N-Channel | 600m Ω @ 3A, 10V | 4V @ 250μA | 820pF @ 100V | 48nC @ 10V | 12ns | 20 ns | 4V | 650V | 7A | 7A Tc | 56 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
SQM50028EM_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | TO-263-7, D2Pak (6 Leads + Tab) | 5.08mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 375W | 48 ns | 1.63mOhm | TO-263-7 | 375W Tc | 120A | 175°C | 105 ns | N-Channel | 2mOhm @ 30A, 10V | 3.5V @ 250μA | 11900pF @ 25V | 185nC @ 10V | 20V | 60V | 120A Tc | 60V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF640STRRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 180mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 130W | 14 ns | 3.1W Ta 130W Tc | 18A | SWITCHING | 45 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 18A Tc | 72A | 580 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SUD40N08-16-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 16mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 20 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 3W | 12 ns | 2V | 3W Ta 136W Tc | 40A | 25 ns | SILICON | N-Channel | 16m Ω @ 40A, 10V | 4V @ 250μA | 1960pF @ 25V | 60nC @ 10V | 52ns | 10 ns | 20V | 80V | 80V | 4 V | 40A Tc | 60A | 10V | ±20V | |||||||||||||||||||||||||||||
IRF9630STRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.02mm | 800mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 3W | 12 ns | -2V | 3W Ta 74W Tc | 6.5A | SWITCHING | 28 ns | SILICON | P-Channel | 800m Ω @ 3.9A, 10V | 4V @ 250μA | 700pF @ 25V | 29nC @ 10V | 27ns | 24 ns | 20V | -200V | -200V | 4 V | 6.5A Tc | 200V | 26A | 500 mJ | 10V | ±20V | ||||||||||||||||||||||||||
SI7114DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 10 ns | 1.5W Ta | 18.3A | SWITCHING | 0.0075Ohm | 1V | 45 ns | SILICON | N-Channel | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 19nC @ 4.5V | 10ns | 10 ns | 20V | 11.7A Ta | 30V | 60A | 42 mJ | 4.5V 10V | ±20V |
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