All Products
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Connectors
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Capacitors
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RF/IF & RFID
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Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | Forward Voltage | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQJA94EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55W | 11 ns | 55W Tc | 46A | 175°C | 23 ns | SILICON | N-Channel | 13.5m Ω @ 10A, 10V | 3.5V @ 250μA | 2000pF @ 25V | 35nC @ 10V | 20V | 80V | 46A Tc | 36 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI2337DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | 270MOhm | Surface Mount | 1.437803g | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 760mW | 15 ns | -4V | 760mW Ta 2.5W Tc | -2.2A | 20 ns | SILICON | P-Channel | 270m Ω @ 1.2A, 10V | 4V @ 250μA | 500pF @ 40V | 17nC @ 10V | 18ns | 12 ns | 20V | -80V | -4 V | 2.2A Tc | 80V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| SI8416DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 43 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | 1.5mm | ROHS3 Compliant | No | 6 | 6-UFBGA | No SVHC | 310μm | 1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | 1 | FET General Purpose Powers | Single | 2.77W | 13 ns | 350mV | 2.77W Ta 13W Tc | 16A | 40 ns | N-Channel | 23m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 1470pF @ 4V | 26nC @ 4.5V | 30ns | 20 ns | 5V | 16A Tc | 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR9010TRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 25W | 6.1 ns | 25W Tc | -5.3A | SWITCHING | 13 ns | SILICON | P-Channel | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 240pF @ 25V | 9.1nC @ 10V | 47ns | 35 ns | 20V | 50V | 5.3A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7322DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.8W | 10 ns | 3.8W Ta 52W Tc | 5.5A | SWITCHING | 12 ns | SILICON | N-Channel | 58m Ω @ 5.5A, 10V | 4.4V @ 250μA | 750pF @ 50V | 20nC @ 10V | 10ns | 10 ns | 20V | 100V | 18A Tc | 20A | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7149DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5.15mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 6.15mm | 5.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 69W | 100 ns | -1.2V | 69W Tc | 23.7A | SWITCHING | 230 ns | SILICON | P-Channel | 5.2m Ω @ 15A, 10V | 2.5V @ 250μA | 4590pF @ 15V | 147nC @ 10V | 150ns | 110 ns | 25V | -20V | 50A | 50A Tc | 30V | 70A | 20 mJ | 4.5V 10V | ±25V | |||||||||||||||||||||||||
| SIR812DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Unknown | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 1V | 6.25W Ta 104W Tc | 60A | SWITCHING | 30V | SILICON | N-Channel | 1.45m Ω @ 20A, 10V | 2.3V @ 250μA | 10240pF @ 15V | 335nC @ 10V | 20V | 60A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4838BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.75mm | 4mm | 2.7mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 8 | 1 | 1 | Single | 2.5W | 12 ns | 400mV | 2.5W Ta 5.7W Tc | 22.5A | 150°C | SWITCHING | 56 ns | SILICON | N-Channel | 2.7m Ω @ 15A, 4.5V | 1V @ 250μA | 5760pF @ 6V | 84nC @ 4.5V | 92ns | 19 ns | 8V | 12V | 400 mV | 34A Tc | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SIJ478DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G4 | 1 | 1 | DRAIN | Single | 12 ns | 5W Ta 62.5W Tc | 60A | SWITCHING | 32 ns | SILICON | N-Channel | 8m Ω @ 20A, 10V | 2.6V @ 250μA | 1855pF @ 40V | 54nC @ 10V | 8ns | 7 ns | 20V | 80V | 60A Tc | 45 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 9.8 ns | 42W Tc | 7.7A | SWITCHING | 0.27Ohm | 21 ns | SILICON | N-Channel | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 27 ns | 10V | 100V | 7.7A Tc | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||
| SI7456DDP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.25mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | 42MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | R-PDSO-C5 | 1 | DRAIN | Single | 5W | 13 ns | 1.5V | 5W Ta 35.7W Tc | 27.8A | SWITCHING | 19 ns | SILICON | N-Channel | 23m Ω @ 10A, 10V | 2.8V @ 250μA | 900pF @ 50V | 29.5nC @ 10V | 14ns | 10 ns | 20V | 100V | 27.8A Tc | 70A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7633DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W | 100 ns | 6.25W Ta 104W Tc | 34A | SWITCHING | 0.0033Ohm | 100 ns | SILICON | P-Channel | 3.3m Ω @ 20A, 10V | 3V @ 250μA | 9500pF @ 10V | 260nC @ 10V | 90ns | 50 ns | 20V | -20V | 60A | 60A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7858BDP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | 2.5MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5W | 25 ns | 5W Ta 48W Tc | 40A | SWITCHING | 115 ns | SILICON | N-Channel | 2.5m Ω @ 15A, 4.5V | 1V @ 250μA | 5760pF @ 6V | 84nC @ 4.5V | 53ns | 30 ns | 8V | 33A | 40A Tc | 12V | 70A | 20 mJ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SIRC04DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | 1 | 5W | 12 ns | 50W Tc | 33.6A | 150°C | 25 ns | N-Channel | 2.45m Ω @ 15A, 10V | 2.1V @ 250μA | 2850pF @ 15V | 56nC @ 10V | 30V | Schottky Diode (Body) | 60A Tc | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4634DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | 5.2mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 2.5W | 14 ns | 2.5W Ta 5.7W Tc | 16.3A | SWITCHING | 33 ns | SILICON | N-Channel | 5.2m Ω @ 15A, 10V | 2.6V @ 250μA | 3150pF @ 15V | 68nC @ 10V | 10ns | 8 ns | 20V | 30V | 24.5A Tc | 70A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFR110TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.507mm | 6.22mm | 540mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 6.9 ns | 2V | 540mOhm | D-Pak | 2.5W Ta 25W Tc | 4.3A | 150°C | 15 ns | N-Channel | 540mOhm @ 2.6A, 10V | 4V @ 250μA | 180pF @ 25V | 8.3nC @ 10V | 16ns | 9.4 ns | 20V | 100V | 4 V | 4.3A Tc | 100V | 180pF | 10V | ±20V | 540 mΩ | |||||||||||||||||||||||||||||||||||
| SQJA96EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W | 13 ns | 48W Tc | 30A | 175°C | 21 ns | SILICON | N-Channel | 21.5m Ω @ 10A, 10V | 3.5V @ 250μA | 1200pF @ 25V | 25nC @ 10V | 20V | 80V | 30A Tc | 80A | 24 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4884BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | 9mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 2.5W | 8 ns | 2.5W Ta 4.45W Tc | 16.5A | SWITCHING | 22 ns | SILICON | N-Channel | 9m Ω @ 10A, 10V | 3V @ 250μA | 1525pF @ 15V | 35nC @ 10V | 11ns | 8 ns | 20V | 30V | 16.5A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI8489EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Tin | No | 4 | 4-UFBGA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | BALL | 1 | 1 | Single | 1.8W | 27 ns | 780mW Ta 1.8W Tc | 5.4A | SWITCHING | 50 ns | SILICON | P-Channel | 44m Ω @ 1.5A, 10V | 1.2V @ 250μA | 765pF @ 10V | 27nC @ 10V | 20ns | 25 ns | 12V | -20V | 20V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SIA447DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 1 | 1 | DRAIN | Single | 3.5W | 30 ns | -400mV | 19W Tc | 12A | SWITCHING | 120 ns | SILICON | P-Channel | 13.5m Ω @ 7A, 4.5V | 850mV @ 250μA | 2880pF @ 6V | 80nC @ 8V | 60ns | 50 ns | 8V | -12V | 12A Tc | 12V | 50A | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI5468DC-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 1.1mm | 1.65mm | 28MOhm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2.3W | 5 ns | 2.3W Ta 5.7W Tc | 6A | SWITCHING | 30V | 15 ns | SILICON | N-Channel | 28m Ω @ 6.8A, 10V | 2.5V @ 250μA | 435pF @ 15V | 12nC @ 10V | 10ns | 10 ns | 20V | 6A | 6A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI8810EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Cut Tape (CT) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Tin | No | 4 | 4-XFBGA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | 260 | 30 | 1 | 900mW | 500mW Ta | 2.1A | 25 ns | N-Channel | 72m Ω @ 1A, 4.5V | 900mV @ 250μA | 245pF @ 10V | 8nC @ 8V | 12ns | 7 ns | 8V | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4800BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2004 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | YES | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 1.3W Ta | 9A | SWITCHING | 30V | SILICON | N-Channel | 18.5m Ω @ 9A, 10V | 1.8V @ 250μA | 13nC @ 5V | 6.5A | 6.5A Ta | 30V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4800BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | 18.5mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.3W | 7 ns | 1.3W Ta | 9A | SWITCHING | 32 ns | SILICON | N-Channel | 18.5m Ω @ 9A, 10V | 1.8V @ 250μA | 13nC @ 5V | 12ns | 12 ns | 25V | 30V | 25 V | 6.5A | 6.5A Ta | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||
| SI4420BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 8.5mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | 750mV | Single | 1.4W | 15 ns | 3V | 1.4W Ta | 9.5A | 40 ns | SILICON | N-Channel | 8.5m Ω @ 13.5A, 10V | 3V @ 250μA | 50nC @ 10V | 11ns | 12 ns | 20V | 30V | 9.5A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFR220TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 800mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 10 | 3 | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 2.5W | 7.2 ns | 2.5W Ta 42W Tc | 4.8A | SWITCHING | 19 ns | SILICON | N-Channel | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 22ns | 13 ns | 20V | 200V | 4.8A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
| SISA26DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen IV | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® 1212-8S | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.6W | 9 ns | 39W Tc | 29.1A | 150°C | 16 ns | N-Channel | 2.65m Ω @ 15A, 10V | 2.5V @ 250μA | 2247pF @ 10V | 44nC @ 10V | 25V | 60A Tc | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS850EN-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 5 | EAR99 | Non-RoHS Compliant | PowerPAK® 1212-8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | 240 | 40 | YES | S-PDSO-F5 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 33W Tc | 0.0215Ohm | 60V | SILICON | N-Channel | 21.5m Ω @ 6.1A, 10V | 2.5V @ 250μA | 2021pF @ 30V | 41nC @ 10V | 12A | 12A Tc | 60V | 48A | 26 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SISA12ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.5W | 1.1V | 3.5W Ta 28W Tc | 25A | SWITCHING | 0.0043Ohm | 30V | SILICON | N-Channel | 4.3m Ω @ 10A, 10V | 2.2V @ 250μA | 2070pF @ 15V | 45nC @ 10V | 20V | 25A Tc | 30V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| SIR872ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | No SVHC | 18MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 240 | 40 | R-PDSO-C5 | 1 | DRAIN | Single | 6.25W | 4.5V | 6.25W Ta 104W Tc | 53.7A | SWITCHING | 15 ns | SILICON | N-Channel | 18m Ω @ 20A, 10V | 4.5V @ 250μA | 1286pF @ 75V | 47nC @ 10V | 10ns | 7 ns | 20V | 53.7A Tc | 150V | 45 mJ | 7.5V 10V | ±20V |