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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFH5006TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.1468mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 990.6μm | 5.15mm | 4.1MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W | 9.6 ns | 2V | 3.6W Ta 156W Tc | 100A | SWITCHING | 30 ns | SILICON | N-Channel | 4.1m Ω @ 50A, 10V | 4V @ 150μA | 4175pF @ 30V | 100nC @ 10V | 13ns | 12 ns | 20V | 60V | 2 V | 21A Ta 100A Tc | 400A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR5305TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -31A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 65mOhm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | -4V | 55V | 110W Tc | 110 ns | -31A | 175°C | SWITCHING | 39 ns | SILICON | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | -55V | -4 V | 31A Tc | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
| BSP149H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | TO-261-4, TO-261AA | No SVHC | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | 1 | FET General Purpose Powers | 1 | DRAIN | Halogen Free | Single | 1.8W | 5.1 ns | -1.4V | 200V | 1.8W Ta | 480mA | 45 ns | SILICON | N-Channel | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 430pF @ 25V | 14nC @ 5V | 3.4ns | 21 ns | 20V | 200V | 200V | Depletion Mode | -1.4 V | 0.66A | 660mA Ta | 2.6A | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSS806NEH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, HEXFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | 3 | AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Halogen Free | Single | 500mW | 7.5 ns | 20V | 500mW Ta | 2.3A | 0.057Ohm | 12 ns | SILICON | N-Channel | 57m Ω @ 2.3A, 2.5V | 0.75V @ 11μA | 529pF @ 10V | 1.7nC @ 2.5V | 9.9ns | 3.7 ns | 8V | 2.3A Ta | 29 pF | 1.8V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| BSS205NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-SOT23 | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500mW | 5.8 ns | 700mV | 20V | 500mW Ta | 2.5A | 150°C | 0.05Ohm | 11 ns | SILICON | N-Channel | 50m Ω @ 2.5A, 4.5V | 1.2V @ 11μA | 419pF @ 10V | 3.2nC @ 4.5V | 2.9ns | 12V | 20V | 2.5A Ta | 24 pF | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRLML9303TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 165MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 1.25W | 7.5 ns | -1.3V | 1.25W Ta | 18 ns | -2.3A | SWITCHING | 9 ns | SILICON | P-Channel | 165m Ω @ 2.3A, 10V | 2.4V @ 10μA | 160pF @ 25V | 2nC @ 4.5V | 14ns | 8.6 ns | 20V | -30V | -1.3 V | 2.3A Ta | 30V | 12A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLML2244TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | 95MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | Other Transistors | 1 | Single | 1.3W | 7 ns | -1.1V | 1.3W Ta | 32 ns | 4.3A | SWITCHING | 34 ns | SILICON | P-Channel | 54m Ω @ 4.3A, 4.5V | 1.1V @ 10μA | 570pF @ 16V | 6.9nC @ 4.5V | 12ns | 25 ns | 12V | -20V | -1.1 V | 4.3A Ta | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| BSS670S2LH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 540mA | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | 9 ns | 55V | 360mW Ta | 540mA | SWITCHING | 0.825Ohm | 21 ns | SILICON | N-Channel | 650m Ω @ 270mA, 10V | 2V @ 2.7μA | 75pF @ 25V | 2.26nC @ 10V | 25ns | 24 ns | 20V | 0.54A | 540mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSS214NWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | SC-70, SOT-323 | 1mm | 1.25mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | 1 | Single | 500mW | 4.1 ns | 950mV | 20V | 500mW Ta | 1.5A | 150°C | 6.8 ns | SILICON | N-Channel | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 143pF @ 10V | 0.8nC @ 5V | 7.8ns | 1.4 ns | 12V | 20V | 1.5A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IPZA60R120P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | TO-247-4 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T4 | 1 | SINGLE WITH BUILT-IN DIODE | 95W Tc | SWITCHING | 0.12Ohm | 600V | SILICON | N-Channel | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 1544pF @ 400V | 36nC @ 10V | 26A Tc | 600V | 78A | 82 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L13ATMA4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 136W Tc | 30A | 0.017Ohm | SILICON | N-Channel | 13m Ω @ 30A, 10V | 2V @ 80μA | 1800pF @ 25V | 69nC @ 10V | 30A Tc | 200A | 240 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N60C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 40 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 4.5A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | 1 | 50W | 6 ns | 600V | 850mOhm | PG-TO252-3 | 50W Tc | 4.5A | 58.5 ns | N-Channel | 950mOhm @ 2.8A, 10V | 3.9V @ 200μA | 490pF @ 25V | 25nC @ 10V | 2.5ns | 9.5 ns | 20V | 4.5A Tc | 600V | 490pF | 10V | ±20V | 950 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO301SPHXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | yes | Active | 3 (168 Hours) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-G5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | -1.5V | -30V | 1.79W Ta | 12.6A | SILICON | P-Channel | 8m Ω @ 14.9A, 10V | 2V @ 250μA | 5890pF @ 25V | 136nC @ 10V | 22ns | 20V | 12.6A Ta | 30V | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S403ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 14 ns | 40V | 94W Tc | 80A | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 4V @ 53μA | 5260pF @ 25V | 66nC @ 10V | 12ns | 16 ns | 20V | 80A Tc | 200 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 16 ns | 40V | 2.5W Ta 96W Tc | 32A | SWITCHING | 0.0019Ohm | 55 ns | SILICON | N-Channel | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 4300pF @ 20V | 61nC @ 10V | 56ns | 11 ns | 20V | 32A Ta 100A Tc | 400A | 170 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD90N03S4L02ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2003 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 0.0022Ohm | 30V | SILICON | N-Channel | 2.2m Ω @ 90A, 10V | 2.2V @ 90μA | 9750pF @ 25V | 140nC @ 10V | 90A | 90A Tc | 30V | 360A | 240 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S4H2ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 18 ns | 40V | 115W Tc | 100A | 0.0024Ohm | 19 ns | SILICON | N-Channel | 2.4m Ω @ 100A, 10V | 4V @ 70μA | 7180pF @ 25V | 90nC @ 10V | 13ns | 21 ns | 20V | 100A Tc | 400A | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC017N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W Ta 139W Tc | SWITCHING | 0.0017Ohm | 40V | SILICON | N-Channel | 1.7m Ω @ 50A, 10V | 4V @ 85μA | 8800pF @ 20V | 108nC @ 10V | 100A | 30A Ta 100A Tc | 40V | 400A | 295 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W | 12 ns | 600V | 63W Tc | 7.3A | SWITCHING | 0.6Ohm | 80 ns | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 9ns | 13 ns | 20V | 7.3A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD50P03P4L11ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2009 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 58W Tc | SWITCHING | 0.0105Ohm | 30V | SILICON | P-Channel | 10.5m Ω @ 50A, 10V | 2V @ 85μA | 3770pF @ 25V | 55nC @ 10V | 50A | 50A Tc | 30V | 200A | 100 mJ | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70P04P409ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 19 ns | -40V | 75W Tc | 73A | 0.0089Ohm | 24 ns | SILICON | P-Channel | 8.9m Ω @ 70A, 10V | 4V @ 120μA | 4810pF @ 25V | 70nC @ 10V | 12ns | 31 ns | 20V | 73A Tc | 40V | 292A | 24 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD053N06NATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Halogen Free | Single | 3W | 12 ns | 60V | 3W Ta 83W Tc | 45A | SWITCHING | 20 ns | SILICON | N-Channel | 5.3m Ω @ 45A, 10V | 2.8V @ 36μA | 2000pF @ 30V | 27nC @ 10V | 12ns | 7 ns | 20V | 18A Ta 45A Tc | 60 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFH5210TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.2 ns | 4V | 3.6W Ta 104W Tc | 100A | SWITCHING | 21 ns | SILICON | N-Channel | 14.9m Ω @ 33A, 10V | 4V @ 100μA | 2570pF @ 25V | 59nC @ 10V | 9.7ns | 6.5 ns | 20V | 100V | 55A | 10A Ta 55A Tc | 220A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSP613PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2003 | SIPMOS® | Active | 1 (Unlimited) | 150°C | -55°C | 40mm | ROHS3 Compliant | Contains Lead | Tin | -2.9A | 4 | TO-261-4, TO-261AA | 1.5mm | 40mm | Surface Mount | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | 1 | 1 | Halogen Free | Single | 1.8W | 6.7 ns | -60V | 110mOhm | PG-SOT223-4 | 1.8W Ta | 2.9A | 26 ns | P-Channel | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 875pF @ 25V | 33nC @ 10V | 9ns | 7 ns | 20V | -60V | 2.9A Ta | 60V | 875pF | 10V | ±20V | 130 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IPD135N08N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 80V | 79W Tc | SWITCHING | 0.0135Ohm | SILICON | N-Channel | 13.5m Ω @ 45A, 10V | 3.5V @ 33μA | 1730pF @ 40V | 25nC @ 10V | 45A | 45A Tc | 180A | 50 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3806TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 71W | 6.3 ns | 71W Tc | 43A | SWITCHING | 49 ns | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 40ns | 47 ns | 20V | 60V | 43A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4510TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 143W | 18 ns | 3V | 143W Tc | 56A | SWITCHING | 42 ns | SILICON | N-Channel | 13.9m Ω @ 38A, 10V | 4V @ 100μA | 3031pF @ 50V | 81nC @ 10V | 34 ns | 20V | 3 V | 56A Tc | 100V | 252A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFH7004TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 5 | EAR99 | 6mm | ROHS3 Compliant | Lead Free | No | 5 | 8-VQFN Exposed Pad | No SVHC | 850μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 156W | 15 ns | 3V | 156W Tc | 100A | SWITCHING | 40V | 73 ns | SILICON | N-Channel | 1.4m Ω @ 100A, 10V | 3.9V @ 150μA | 6419pF @ 25V | 194nC @ 10V | 51ns | 49 ns | 20V | 3 V | 100A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH6200TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W | 14 ns | 800mV | 3.6W Ta 156W Tc | 100A | SWITCHING | 140 ns | SILICON | N-Channel | 0.95m Ω @ 50A, 10V | 1.1V @ 150μA | 10890pF @ 10V | 230nC @ 4.5V | 74ns | 160 ns | 12V | 20V | 45A | 49A Ta 100A Tc | 400A | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IPC100N04S51R7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 115W Tc | 0.002Ohm | 40V | SILICON | N-Channel | 1.7m Ω @ 50A, 10V | 3.4V @ 60μA | 4810pF @ 25V | 83nC @ 10V | 100A | 100A Tc | 40V | 400A | 220 mJ | 7V 10V | ±20V |