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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRF6623TRPBF IRF6623TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 4.826mm ROHS3 Compliant Lead Free 16A No 5 DirectFET™ Isometric ST No SVHC 506μm 3.95mm 5.7MOhm Surface Mount -40°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 9.7 ns 2.2V 1.4W Ta 42W Tc 55mA SWITCHING 12 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.2V @ 250μA 1360pF @ 10V 17nC @ 4.5V 40ns 4.5 ns 20V 20V 2.2 V 16A Ta 55A Tc 43 mJ 4.5V 10V ±20V
    IRFH7085TRPBF IRFH7085TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 StrongIRFET™ Active 1 (Unlimited) 5 EAR99 6.15mm ROHS3 Compliant Lead Free 8 8-PowerVDFN No SVHC 950μm 5.15mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N5 1 1 DRAIN Single 156W 13 ns 3.7V 156W Tc 23A 150°C SWITCHING 0.0032Ohm 63 ns SILICON N-Channel 3.2m Ω @ 75A, 10V 3.7V @ 150μA 6460pF @ 25V 165nC @ 10V 25ns 23 ns 20V 60V 100A Tc 590A 554 mJ 6V 10V ±20V
    BSO201SPHXUMA1 BSO201SPHXUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 8-SOIC (0.154, 3.90mm Width) No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.6W 21 ns -900mV -20V 1.6W Ta 14.9A 99 ns SILICON P-Channel 8m Ω @ 14.9A, 4.5V 1.2V @ 250μA 9600pF @ 15V 88nC @ 4.5V 99ns 162 ns 12V 9.3A 12A Ta 20V 59.6A 2.5V 4.5V ±12V
    AUIRFR5410TRL AUIRFR5410TRL Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 66W Tc SWITCHING 0.205Ohm 100V SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 13A 13A Tc 100V 52A 194 mJ 10V ±20V
    IRFU9024NPBF IRFU9024NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free -1.6A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 175mOhm Through Hole -55°C~150°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 38W 13 ns -4V 38W Tc 71 ns -11A SWITCHING 23 ns SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 55ns 37 ns 20V -55V -55V -4 V 11A Tc 55V 44A 62 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 125W 12 ns 3.7V 125W Tc 95A 44 ns N-Channel 5.9m Ω @ 57A, 10V 3.7V @ 100μA 4010pF @ 25V 110nC @ 10V 72ns 43 ns 20V 95A Tc 60V 6V 10V ±20V
    IPD100N04S402ATMA1 IPD100N04S402ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2004 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc 0.002Ohm 40V SILICON N-Channel 2m Ω @ 100A, 10V 4V @ 95μA 9430pF @ 25V 118nC @ 10V 100A 100A Tc 40V 400A 440 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free -18A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 110Ohm Through Hole -55°C~150°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 57W 12 ns -4V 57W Tc -18A SWITCHING 20 ns SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 28ns 16 ns 20V -55V -55V -4 V 18A Tc 55V 64A 10V ±20V
    IRFZ44ZPBF IRFZ44ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1999 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 51A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.65mm 4.826mm 13.9Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 80W 14 ns 4V 80W Tc 35 ns 51A SWITCHING 33 ns SILICON N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 55V 4 V 51A Tc 200A 86 mJ 10V ±20V
    IRLU120NPBF IRLU120NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 10A No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 185mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 48W 4 ns 2V 48W Tc 10A SWITCHING 23 ns SILICON N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 35ns 22 ns 16V 100V 100V 2 V 10A Tc 85 mJ 4V 10V ±16V
    IRF1010ZSTRLPBF IRF1010ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W 18 ns 140W Tc 75A SWITCHING 0.0075Ohm 36 ns SILICON N-Channel 7.5m Ω @ 75A, 10V 4V @ 250μA 2840pF @ 25V 95nC @ 10V 150ns 92 ns 20V 55V 75A Tc 10V ±20V
    IPB60R280P7ATMA1 IPB60R280P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 53W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 3.8A, 10V 4V @ 190μA 761pF @ 400V 18nC @ 10V 12A Tc 600V 36A 38 mJ 10V ±20V
    IRL1404ZSTRLPBF IRL1404ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 3.1MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 19 ns 2.7V 230W Tc 39 ns 75mA SWITCHING 30 ns SILICON N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 180ns 49 ns 16V 40V 200A 75A Tc 790A 220 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 11A No 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 110mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 33W 6.4 ns 4V 41W Tc 190 ns 12A SWITCHING 2.5kV 37 ns SILICON N-Channel 110m Ω @ 6.6A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 27ns 25 ns 20V 100V 100V 4 V 12A Tc 60A 10V ±20V
    IRF60B217 IRF60B217 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2013 StrongIRFET™ Active Not Applicable 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 83W Tc 60A SWITCHING 0.009Ohm 60V SILICON N-Channel 9m Ω @ 36A, 10V 3.7V @ 50μA 2230pF @ 25V 66nC @ 10V 60A Tc 60V 225A 124 mJ 6V 10V ±20V
    IRF640NLPBF IRF640NLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 18A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 15.01mm 4.826mm 150mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power 1 DRAIN Single 150W 10 ns 4V 150W Tc 18A 175°C SWITCHING 23 ns SILICON N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 1160pF @ 25V 67nC @ 10V 19ns 5.5 ns 20V 200V 4 V 18A Tc 72A 247 mJ 10V ±20V
    IPN80R750P7ATMA1 IPN80R750P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 7.2W Tc SWITCHING 0.75Ohm 800V SILICON N-Channel 750m Ω @ 2.7A, 10V 3.5V @ 140μA 460pF @ 500V 17nC @ 10V 7A Tc 800V 10V ±20V
    IPSA70R2K0CEAKMA1 IPSA70R2K0CEAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W Tc SWITCHING 2Ohm 700V SILICON N-Channel 2 Ω @ 1A, 10V 3.5V @ 70μA 163pF @ 100V 7.8nC @ 10V 4A Tc 700V 6.3A 11 mJ 10V ±20V
    IRL2703PBF IRL2703PBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 24A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 No SVHC 8.77mm 4.69mm 40MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 45W 8.5 ns 1V 45W Tc 97 ns 24A SWITCHING 12 ns SILICON N-Channel 40m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 30V 1 V 24A Tc 96A 77 mJ 4.5V 10V ±16V
    IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Halogen Free 8 ns 100V 136W Tc 90A 42 ns N-Channel 6.6m Ω @ 90A, 10V 2.1V @ 90μA 6250pF @ 25V 98nC @ 10V 6ns 40 ns 16V 90A Tc 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.6mm ROHS3 Compliant Contains Lead, Lead Free Tin -28A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.1mm 2.3mm 65mOhm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE 9.65mm e3 260 30 Other Transistors 1 DRAIN Single 89W 14 ns -4V 110W Tc -31A SWITCHING 39 ns SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V -4 V 25A 31A Tc 55V 280 mJ 10V ±20V
    IRL3705ZSTRLPBF IRL3705ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm 8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 86A SWITCHING 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 75A 75A Tc 4.5V 10V ±16V
    IPD65R225C7ATMA1 IPD65R225C7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Cut Tape (CT) 2013 CoolMOS™ C7 Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 63W 9 ns 650V 63W Tc 11A SWITCHING 0.225Ohm 48 ns SILICON N-Channel 225m Ω @ 4.8A, 10V 4V @ 240μA 996pF @ 400V 20nC @ 10V 6ns 10 ns 20V 11A Tc 48 mJ 10V ±20V
    IRF1010NSTRLPBF IRF1010NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 85A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252 DRAIN Single 180W 13 ns 4V 180W Tc 100 ns 85A SWITCHING 39 ns SILICON N-Channel 11m Ω @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 76ns 48 ns 20V 55V 55V 4 V 75A 85A Tc 290A 250 mJ 10V ±20V
    IRFZ44VPBF IRFZ44VPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 55A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-220AB DRAIN Single 115W 13 ns 4V 115W Tc 105 ns 55A SWITCHING 40 ns SILICON N-Channel 16.5m Ω @ 31A, 10V 4V @ 250μA 1812pF @ 25V 67nC @ 10V 97ns 57 ns 20V 60V 60V 4 V 55A Tc 220A 10V ±20V
    IRF8301MTRPBF IRF8301MTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 7 ULTRA LOW RESISTANCE DirectFET™ Isometric MT No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 1 FET General Purpose Power 1 DRAIN Single 2.8W 20 ns 1.7V 2.8W Ta 89W Tc 34A SWITCHING 25 ns SILICON N-Channel 1.5m Ω @ 32A, 10V 2.35V @ 150μA 6140pF @ 15V 77nC @ 4.5V 30ns 17 ns 20V 30V 34A Ta 192A Tc 250A 260 mJ 4.5V 10V ±20V
    IPT60R080G7XTMA1 IPT60R080G7XTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ G7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerSFN 2.4mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-HSOF-8 e3 Tin (Sn) SINGLE FLAT NOT SPECIFIED NOT SPECIFIED YES R-PSSO-F3 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 167W 19 ns 167W Tc 29A 150°C SWITCHING 0.08Ohm 61 ns SILICON N-Channel 80m Ω @ 9.7A, 10V 4V @ 490μA 1640pF @ 400V 42nC @ 10V 20V 600V 29A Tc 650V 83A 97 mJ 10V ±20V
    IPDD60R080G7XTMA1 IPDD60R080G7XTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) CoolMOS™ G7 Active 1 (Unlimited) ROHS3 Compliant 10-PowerSOP Module 2.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 174W 19 ns 174W Tc 29A 150°C 61 ns N-Channel 80m Ω @ 9.7A, 10V 4V @ 490μA 1640pF @ 400V 42nC @ 10V 20V 600V 29A Tc 10V ±20V
    IRLR7807ZTRPBF IRLR7807ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 43A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 13.8MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 40W 7.1 ns 1.8V 40W Tc 35 ns 43A SWITCHING 9.8 ns SILICON N-Channel 13.8m Ω @ 15A, 10V 2.25V @ 250μA 780pF @ 15V 11nC @ 4.5V 28ns 3.5 ns 20V 30V 1.8 V 43A Tc 28 mJ 4.5V 10V ±20V
    IRF7450TRPBF IRF7450TRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 8 SMD/SMT 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 2.5A No 8 AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 170mOhm Surface Mount -55°C~150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 3W 10 ns 5.5V 2.5W Ta 2.5A SWITCHING 17 ns SILICON N-Channel 170m Ω @ 1.5A, 10V 5.5V @ 250μA 940pF @ 25V 39nC @ 10V 3ns 18 ns 30V 200V 200V 5.5 V 2.5A Ta 20A 230 mJ 10V ±30V