Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPA041N04NGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 16 ns | 40V | 3.5mOhm | PG-TO220-FP | 35W Tc | 70A | 23 ns | N-Channel | 4.1mOhm @ 70A, 10V | 4V @ 45μA | 4500pF @ 20V | 56nC @ 10V | 3.8ns | 4.8 ns | 20V | 70A Tc | 40V | 4.5nF | 10V | ±20V | 4.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB7546PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 99W | 11 ns | 3.7V | 99W Tc | 75A | SWITCHING | 32 ns | SILICON | N-Channel | 7.3m Ω @ 45A, 10V | 3.7V @ 100μA | 3000pF @ 25V | 87nC @ 10V | 51ns | 34 ns | 20V | 60V | 75A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFB23N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | 23A | No | 3 | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 90mOhm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 3.8W | 10 ns | 5.5V | 3.8W Ta 136W Tc | 23A | SWITCHING | 18 ns | SILICON | N-Channel | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 1200pF @ 25V | 56nC @ 10V | 32ns | 8.4 ns | 30V | 150V | 150V | 5.5 V | 23A Tc | 92A | 260 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
IPA60R280P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 24W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 761pF @ 400V | 18nC @ 10V | 12A Tc | 600V | 36A | 38 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R400CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 1999 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 650V | 31W Tc | SWITCHING | 0.4Ohm | SILICON | N-Channel | 400m Ω @ 3.2A, 10V | 3.5V @ 320μA | 710pF @ 100V | 39nC @ 10V | Super Junction | 30A | 215 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN80R360P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 30W Tc | SWITCHING | 0.36Ohm | 800V | SILICON | N-Channel | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 930pF @ 500V | 30nC @ 10V | 13A Tc | 800V | 34A | 34 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ0589NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W Ta | SWITCHING | 0.0053Ohm | 30V | SILICON | N-Channel | 4.4m Ω @ 8A, 10V | 2V @ 250μA | 950pF @ 15V | 15nC @ 10V | 17A | 17A Ta | 30V | 68A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ088N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 30V | 2.1W Ta 35W Tc | 11A | SWITCHING | 0.0097Ohm | SILICON | N-Channel | 8m Ω @ 20A, 10V | 2V @ 250μA | 2100pF @ 15V | 27nC @ 10V | 3ns | 20V | 40A | 11A Ta 40A Tc | 25 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSC097N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.8V | 60V | 2.5W Ta 36W Tc | 46A | SWITCHING | 0.0097Ohm | SILICON | N-Channel | 9.7m Ω @ 40A, 10V | 3.3V @ 14μA | 1075pF @ 30V | 15nC @ 10V | 2ns | 20V | 12A | 46A Tc | 13 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSC0904NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 30V | 2.5W Ta 37W Tc | 20A | SWITCHING | 0.0052Ohm | SILICON | N-Channel | 3.7m Ω @ 30A, 10V | 2V @ 250μA | 1100pF @ 15V | 17nC @ 10V | 4.4ns | 20V | 20A Ta 78A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRF7413ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 13A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 10MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | 6.3 mm | Single | 2.5W | 8.7 ns | 1.8V | 2.5W Ta | 36 ns | 13A | SWITCHING | 11 ns | SILICON | N-Channel | 10m Ω @ 13A, 10V | 2.25V @ 25μA | 1210pF @ 15V | 14nC @ 4.5V | 6.3ns | 3.8 ns | 20V | 30V | 30V | 1.8 V | 13A Ta | 32 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPA65R1K0CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2016 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 650V | 68W Tc | 7.2A | SWITCHING | 1Ohm | SILICON | N-Channel | 1 Ω @ 1.5A, 10V | 3.5V @ 200μA | 328pF @ 100V | 15.3nC @ 10V | Super Junction | 7.2A Tc | 12A | 50 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPB067N08N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | SWITCHING | 0.0067Ohm | 80V | SILICON | N-Channel | 6.7m Ω @ 73A, 10V | 3.5V @ 73μA | 3840pF @ 40V | 56nC @ 10V | 80A | 80A Tc | 80V | 320A | 150 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRF2807ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 9.4Ohm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 170W | 18 ns | 4V | 170W Tc | 75A | SWITCHING | 40 ns | SILICON | N-Channel | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 3270pF @ 25V | 110nC @ 10V | 79ns | 45 ns | 20V | 75V | 75V | 4 V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFI1310NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 36A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 Full Pack | No SVHC | 9.8mm | 4.826mm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 45W | 11 ns | 4V | 56W Tc | 24A | SWITCHING | 2.5kV | 45 ns | SILICON | N-Channel | 36m Ω @ 13A, 10V | 4V @ 250μA | 1900pF @ 25V | 120nC @ 10V | 56ns | 40 ns | 20V | 100V | 100V | 4 V | 22A | 24A Tc | 420 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRF1010NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 85A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.82mm | 11MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 180W | 13 ns | 4V | 180W Tc | 100 ns | 85A | 175°C | SWITCHING | 39 ns | SILICON | N-Channel | 11m Ω @ 43A, 10V | 4V @ 250μA | 3210pF @ 25V | 120nC @ 10V | 76ns | 48 ns | 20V | 55V | 55V | 4 V | 85A Tc | 290A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRFB8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 3.43mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 163W | 14 ns | 3V | 163W Tc | 120A | 55 ns | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 5193pF @ 25V | 161nC @ 10V | 128ns | 77 ns | 20V | 3 V | 120A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN50R950CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-261-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 6.6A | N-Channel | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 231pF @ 100V | 10.5nC @ 10V | 6.6A Tc | 500V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R1K5CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | SOT-223-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 5A | N-Channel | 1.5 Ω @ 1.1A, 10V | 3.5V @ 90μA | 200pF @ 100V | 9.4nC @ 10V | 5A Tc | 600V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH3702TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 2.9972mm | ROHS3 Compliant | No | 8 | 8-PowerVDFN | No SVHC | 939.8μm | 2.9972mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 9.6 ns | 1.8V | 2.8W Ta | 16A | SWITCHING | 0.0071Ohm | 11 ns | SILICON | N-Channel | 7.1m Ω @ 16A, 10V | 2.35V @ 25μA | 1510pF @ 15V | 14nC @ 4.5V | 15ns | 5.8 ns | 20V | 30V | 30V | 1.8 V | 16A Ta 42A Tc | 120A | 77 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRLHS2242TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | 6-PowerVDFN | No SVHC | 31MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 9.6W | 7.9 ns | -800mV | 2.1W Ta 9.6W Tc | 7.2A | SWITCHING | 54 ns | SILICON | P-Channel | 31m Ω @ 8.5A, 4.5V | 1.1V @ 10μA | 877pF @ 10V | 12nC @ 10V | 54ns | 66 ns | 12V | -20V | -800 mV | 7.2A Ta 15A Tc | 20V | 34A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF6217TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | Single | 2.5W | 12 ns | -5V | 2.5W Ta | -700mA | SWITCHING | 14 ns | SILICON | P-Channel | 2.4 Ω @ 420mA, 10V | 5V @ 250μA | 150pF @ 25V | 9nC @ 10V | 7.2ns | 16 ns | 20V | -150V | 20 V | 0.7A | 700mA Ta | 150V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF7606TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 2 (1 Year) | 8 | 3mm | ROHS3 Compliant | Lead Free | Tin | -3.6A | No | 8 | LOGIC LEVEL COMPATIBLE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 860μm | 3mm | 90MOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 1.8W | 13 ns | 1.8W Ta | -3.6A | SWITCHING | 43 ns | SILICON | P-Channel | 90m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 25V | 30nC @ 10V | 20ns | 39 ns | 20V | -30V | 3.6A Ta | 30V | 29A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSL307SPH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | -5.5A | No | 6 | AVALANCHE RATED | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.6mm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | AEC-Q101 | 1 | Halogen Free | Single | 7.3 ns | -1.5V | -30V | 2W Ta | 5.5A | SWITCHING | 0.043Ohm | 36.4 ns | SILICON | P-Channel | 43m Ω @ 5.5A, 10V | 2V @ 40μA | 805pF @ 25V | 29nC @ 10V | 8.4ns | 29 ns | 20V | 5.5A Ta | 30V | 22A | 44 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFHM8326TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Cut Tape (CT) | 2013 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 12 ns | 1.7V | 2.8W Ta 37W Tc | 19A | SWITCHING | 0.0067Ohm | 18 ns | SILICON | N-Channel | 4.7m Ω @ 20A, 10V | 2.2V @ 50μA | 2496pF @ 10V | 39nC @ 10V | 35ns | 12 ns | 20V | 30V | 70A | 19A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
BSC090N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 32W | 30V | 2.5W Ta 32W Tc | 13A | SWITCHING | SILICON | N-Channel | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 1500pF @ 15V | 18nC @ 10V | 2.6ns | 20V | 13A Ta 48A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSZ050N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, HIGH VOLTAGE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 50W | 30V | 2.1W Ta 50W Tc | 16A | SWITCHING | SILICON | N-Channel | 5m Ω @ 20A, 10V | 2.2V @ 250μA | 2800pF @ 15V | 35nC @ 10V | 4ns | 20V | 40A | 16A Ta 40A Tc | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSL202SNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 6 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 2W | 8.26 ns | 950mV | 20V | 2W Ta | 7.5A | 0.022Ohm | 18.9 ns | SILICON | N-Channel | 22m Ω @ 7.5A, 4.5V | 1.2V @ 30μA | 1147pF @ 10V | 8.7nC @ 10V | 27.5ns | 12V | 20V | 7.5A Ta | 30A | 30 mJ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFR120ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 8.7A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 190MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 35W | 8.3 ns | 4V | 35W Tc | 36 ns | 8.7A | SWITCHING | 27 ns | SILICON | N-Channel | 190m Ω @ 5.2A, 10V | 4V @ 250μA | 310pF @ 25V | 10nC @ 10V | 26ns | 23 ns | 20V | 100V | 100V | 4 V | 8.7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF7726TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3.048mm | ROHS3 Compliant | Contains Lead, Lead Free | -7A | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 910μm | 3.048mm | 26mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 1.79W | 15 ns | -2.5V | 1.79W Ta | -7A | SWITCHING | 227 ns | SILICON | P-Channel | 26m Ω @ 7A, 10V | 2.5V @ 250μA | 2204pF @ 25V | 69nC @ 10V | 25ns | 107 ns | 20V | -30V | -2.5 V | 7A | 7A Ta | 30V | 4.5V 10V | ±20V |
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