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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    BSP372NH6327XTSA1 BSP372NH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SOT223-4 e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 1.8W 5.1 ns 1.4V 100V 1.8W Ta 1.8A 150°C 0.23Ohm 47.3 ns SILICON N-Channel 230m Ω @ 1.8A, 10V 1.8V @ 218μA 329pF @ 25V 14.3nC @ 10V 6.7ns 20V 100V 1.8A Ta 28 pF 4.5V 10V ±20V
    IRFHM830DTRPBF IRFHM830DTRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 3.2766mm RoHS Compliant Lead Free No 8 8-VQFN Exposed Pad No SVHC 990.6μm 3.3mm 7.1MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL S-PDSO-N5 FET General Purpose Power 1 DRAIN Single 2.8W 9.8 ns 1.8V 2.8W Ta 37W Tc 20A SWITCHING 9.1 ns SILICON N-Channel 4.3m Ω @ 20A, 10V 2.35V @ 50μA 1797pF @ 25V 27nC @ 10V 20ns 6.7 ns 20V 30V 1.8 V 40A 20A Ta 40A Tc 4.5V 10V ±20V
    IRFHM830TR2PBF IRFHM830TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2005 HEXFET® Obsolete 1 (Unlimited) EAR99 150°C -55°C 3.2766mm RoHS Compliant Lead Free No 8 8-VQFN Exposed Pad No SVHC 990.6μm 3.3mm Surface Mount MOSFET (Metal Oxide) 2.7W 1 37W 12 ns 1.8V 26 ns 21A 13 ns N-Channel 3.8m Ω @ 20A, 10V 2.35V @ 50μA 2155pF @ 25V 31nC @ 10V 25ns 9.2 ns 20V 30V 1.8 V 21A Ta 40A Tc
    IRFHM830DTR2PBF IRFHM830DTR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Digi-Reel® 2013 HEXFET® Obsolete 1 (Unlimited) EAR99 150°C -55°C 3.2766mm RoHS Compliant No 8 8-VQFN Exposed Pad No SVHC 990.6μm 3.3mm Surface Mount MOSFET (Metal Oxide) 2.8W 1 37W 9.8 ns 1.8V 24 ns 20A 9.1 ns N-Channel 4.3m Ω @ 20A, 10V 2.35V @ 50μA 1797pF @ 25V 27nC @ 10V 20ns 6.7 ns 20V 30V 1.8 V 20A Ta 40A Tc
    IPP65R280E6XKSA1 IPP65R280E6XKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 11 ns 650V 104W Tc 13.8A SWITCHING 0.28Ohm 76 ns SILICON N-Channel 280m Ω @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 9ns 20V 13.8A Tc 290 mJ 10V ±20V
    IPP65R380E6XKSA1 IPP65R380E6XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 83W 10 ns 650V 83W Tc 10.6A SWITCHING 0.38Ohm 57 ns SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 7ns 8 ns 20V 10.6A Tc 29A 10V ±20V
    IPP60R520E6XKSA1 IPP60R520E6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tube 2011 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 10.36mm RoHS Compliant No 3 TO-220-3 15.95mm 4.57mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 NO 1 TO-220AB Halogen Free Single 66W 12 ns 66W Tc 8.1A SWITCHING 0.52Ohm 75 ns SILICON N-Channel 520m Ω @ 2.8A, 10V 3.5V @ 230μA 512pF @ 100V 23.4nC @ 10V 10ns 9 ns 20V 650V 8.1A Tc 600V 22A 10V ±20V
    IPD60R3K3C6 IPD60R3K3C6 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 18.1W Tc SWITCHING 600V SILICON N-Channel 3.3 Ω @ 500mA, 10V 3.5V @ 40μA 93pF @ 100V 4.6nC @ 10V 1.7A 1.7A Tc 600V 4A 6 mJ 10V ±20V
    IPD65R600E6BTMA1 IPD65R600E6BTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2008 CoolMOS™ no Obsolete 1 (Unlimited) 2 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 63W Tc SWITCHING 0.6Ohm 650V SILICON N-Channel 600m Ω @ 2.1A, 10V 3.5V @ 210μA 440pF @ 100V 23nC @ 10V 7.3A Tc 650V 18A 142 mJ 10V ±20V
    AUIRF1010ZS AUIRF1010ZS Infineon Technologies $0.00
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    		 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.3472mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 140W 18 ns 2V 140W Tc 75A SWITCHING 0.0075Ohm 36 ns SILICON N-Channel 7.5m Ω @ 75A, 10V 4V @ 250μA 2840pF @ 25V 95nC @ 10V 150ns 92 ns 20V 55V 94A 75A Tc 10V ±20V
    AUIRF1405ZS AUIRF1405ZS Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2006 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Tin No 2 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 FET General Purpose Power 1 DRAIN Single 230W 18 ns 2V 230W Tc 150A SWITCHING 0.0049Ohm 48 ns SILICON N-Channel 4.9m Ω @ 75A, 10V 4V @ 250μA 4780pF @ 25V 180nC @ 10V 110ns 82 ns 20V 55V 150A Tc 600A 10V ±20V
    AUIRF2907Z AUIRF2907Z Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 19 ns 2V 300W Tc 75A SWITCHING 0.0045Ohm 97 ns SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7500pF @ 25V 270nC @ 10V 140ns 100 ns 20V 75V 75A Tc 680A 690 mJ 10V ±20V
    AUIRFR2307Z AUIRFR2307Z Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 16 ns 110W Tc 42A SWITCHING 44 ns SILICON N-Channel 16m Ω @ 32A, 10V 4V @ 100μA 2190pF @ 25V 75nC @ 10V 65ns 29 ns 20V 75V 42A Tc 10V ±20V
    AUIRFR2607Z AUIRFR2607Z Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 14 ns 2V 110W Tc 45A SWITCHING 0.022Ohm 39 ns SILICON N-Channel 22m Ω @ 30A, 10V 4V @ 50μA 1440pF @ 25V 51nC @ 10V 59ns 28 ns 20V 75V 42A 42A Tc 96 mJ 10V ±20V
    AUIRFR4104 AUIRFR4104 Infineon Technologies $0.00
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    		 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 5.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 17 ns 2V 140W Tc 42A SWITCHING 37 ns SILICON N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 69ns 36 ns 20V 40V 42A Tc 480A 10V ±20V
    AUIRL1404ZS AUIRL1404ZS Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount, Through Hole Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 9.65mm 4.83mm 5.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 19 ns 1.4V 200W Tc 160A SWITCHING 30 ns SILICON N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 180ns 49 ns 16V 40V 160A Tc 790A 490 mJ 4.5V 10V ±16V
    AUIRFU4104 AUIRFU4104 Infineon Technologies $0.00
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    		 download Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.73mm RoHS Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 7.49mm 2.39mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 DRAIN Single 140W 17 ns 2V 140W Tc 119A SWITCHING 0.0055Ohm 37 ns SILICON N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 69ns 36 ns 20V 40V 42A 42A Tc 480A 10V ±20V
    AUIRLR2905TRL AUIRLR2905TRL Infineon Technologies $0.00
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    		 download 13 Weeks Tape & Reel (TR) 2014 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 42A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
    AUIRLR2703 AUIRLR2703 Infineon Technologies $0.00
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    		 download 52 Weeks Surface Mount Tube 2006 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 8.5 ns 1V 45W Tc 23A SWITCHING 0.045Ohm 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 1 V 20A 20A Tc 96A 200 mJ 4.5V 10V ±16V
    AUIRF540ZS AUIRF540ZS Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 92W 15 ns 2V 92W Tc 36A SWITCHING 0.0265Ohm 43 ns SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 51ns 39 ns 20V 100V 2 V 36A Tc 10V ±20V
    AUIRLR2905Z AUIRLR2905Z Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 14 ns 1V 110W Tc 60A SWITCHING 24 ns SILICON N-Channel 13.5m Ω @ 36A, 10V 3V @ 250μA 1570pF @ 25V 35nC @ 5V 130ns 33 ns 16V 55V 42A 42A Tc 240A 85 mJ 4.5V 10V ±16V
    AUIRFR6215 AUIRFR6215 Infineon Technologies $0.00
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    		 download 26 Weeks Tube 2011 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.295Ohm 150V SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
    AUIRFR5505TRL AUIRFR5505TRL Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2014 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Other Transistors 1 TO-252AA DRAIN Single 57W 12 ns 57W Tc 18A SWITCHING 0.11Ohm 20 ns SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 28ns 16 ns 20V 55V 18A Tc 64A 150 mJ 10V ±20V
    AUIRFS4610 AUIRFS4610 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 11.3mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 190W 18 ns 2V 190W Tc 73A SWITCHING 53 ns SILICON N-Channel 14m Ω @ 44A, 10V 4V @ 100μA 3550pF @ 50V 140nC @ 10V 87ns 70 ns 20V 100V 2 V 73A Tc 290A 10V ±20V
    AUIRFSL4310 AUIRFSL4310 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 40 FET General Purpose Power 1 Single 300W 26 ns 2V 300W Tc 130A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 110ns 78 ns 20V 100V 75A 75A Tc 550A 980 mJ
    AUIRFR2607ZTRL AUIRFR2607ZTRL Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free No 3 ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W 14 ns 110W Tc 42A SWITCHING 0.022Ohm 39 ns SILICON N-Channel 22m Ω @ 30A, 10V 4V @ 50μA 1440pF @ 25V 51nC @ 10V 59ns 28 ns 20V 75V 42A Tc 180A 96 mJ 10V ±20V
    IRFH5006TR2PBF IRFH5006TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 6.1468mm RoHS Compliant No 8 8-PowerTDFN No SVHC 990.6μm 5.15mm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 3.6W 9.6 ns 4V 4.1mOhm 8-PQFN (5x6) 42 ns 100A 30 ns N-Channel 4.1mOhm @ 50A, 10V 4V @ 150μA 4175pF @ 30V 100nC @ 10V 13ns 12 ns 20V 60V 4 V 21A Ta 100A Tc 60V 4.175nF 4.1 mΩ
    IRF9333PBF IRF9333PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Other Transistors 1 Single 2.5W 16 ns -1.8V 2.5W Ta 36 ns -9.2A 150°C SWITCHING 55 ns SILICON P-Channel 19.4m Ω @ 9.2A, 10V 2.4V @ 25μA 1110pF @ 25V 38nC @ 10V 44ns 49 ns 20V -30V -1.8 V 9.2A Ta 30V 75A 4.5V 10V ±20V
    IRF9321PBF IRF9321PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Other Transistors 1 Single 2.5W 21 ns -1.8V 2.5W Ta 57 ns -15A 150°C SWITCHING 0.0072Ohm 185 ns SILICON P-Channel 7.2m Ω @ 15A, 10V 2.4V @ 50μA 2590pF @ 25V 98nC @ 10V 79ns 145 ns 20V -30V -1.8 V 15A Ta 30V 4.5V 10V ±20V
    IRLR8726PBF IRLR8726PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 5.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 75W 12 ns 1.8V 75W Tc 36 ns 86A 15 ns N-Channel 5.8m Ω @ 25A, 10V 2.35V @ 50μA 2150pF @ 15V 23nC @ 4.5V 49ns 16 ns 20V 30V 30V 1.8 V 86A Tc 4.5V 10V ±20V