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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Max Breakdown Voltage | Supplier Device Package | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Input Capacitance | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC817SUE6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | Last Time Buy | 1 (Unlimited) | 6 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | 6 | SC-74, SOT-457 | 170MHz | 1mm | 1.6mm | Surface Mount | 150°C TJ | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BC817 | 1W | 1 | Not Halogen Free | NPN | Single | 1W | 45V | 500mA | 45V | 400mV | AMPLIFIER | SILICON | NPN | 170MHz | 100nA ICBO | 400mV | 50V | 5V | 160 @ 100mA 1V | 400mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM4231TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | RoHS Compliant | Lead Free | Tin | No | 8 | 8-PowerTDFN | No SVHC | 900μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | IRFHM4231 | S-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 8.7 ns | 1.6V | 2.7W Ta 29W Tc | 22A | SWITCHING | 0.0046Ohm | 25V | 12 ns | SILICON | N-Channel | 3.4m Ω @ 30A, 10V | 2.1V @ 35μA | 1270pF @ 13V | 20nC @ 10V | 28ns | 5.9 ns | 20V | 40A Tc | 25V | 42 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7665S2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 4.826mm | ROHS3 Compliant | No | 3 | DirectFET™ Isometric SB | No SVHC | 508μm | 3.9624mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 30W | 3.8 ns | 4V | 2.4W Ta 30W Tc | 14.4A | SWITCHING | 0.062Ohm | 7.1 ns | SILICON | N-Channel | 62m Ω @ 8.9A, 10V | 5V @ 25μA | 515pF @ 25V | 13nC @ 10V | 6.4ns | 3.6 ns | 20V | 100V | 4 V | 4.1A Ta 14.4A Tc | 58A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6725MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W | 16 ns | 1.8V | 2.8W Ta 100W Tc | 170A | SWITCHING | 0.0022Ohm | 19 ns | SILICON | N-Channel | 2.2m Ω @ 28A, 10V | 2.35V @ 100μA | 4700pF @ 15V | 54nC @ 4.5V | 22ns | 13 ns | 20V | 30V | 1.8 V | 28A | 28A Ta 170A Tc | 220A | 190 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7110TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.85mm | ROHS3 Compliant | No | 8 | 8-TQFN Exposed Pad | No SVHC | 1.17mm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | DRAIN | Single | 3.6W | 11 ns | 3V | 3.6W Ta 104W Tc | 11A | SWITCHING | 22 ns | SILICON | N-Channel | 13.5m Ω @ 35A, 10V | 4V @ 100μA | 3240pF @ 25V | 87nC @ 10V | 23ns | 18 ns | 20V | 3 V | 50A | 11A Ta 58A Tc | 100V | 240A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8403 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 99W | 10 ns | 2.6mOhm | D2PAK | 99W Tc | 123A | 26 ns | N-Channel | 3.3mOhm @ 70A, 10V | 3.9V @ 100μA | 3183pF @ 25V | 93nC @ 10V | 77ns | 43 ns | 20V | 3 V | 123A Tc | 40V | 3.183nF | 10V | ±20V | 3.3 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4234TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6mm | RoHS Compliant | Lead Free | Copper, Silver, Tin | No | 5 | 8-PowerTDFN | No SVHC | 900μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.5W | 7.8 ns | 1.6V | 3.5W Ta 27W Tc | 22A | 8 ns | N-Channel | 4.6m Ω @ 30A | 2.1V @ 25μA | 1011pF @ 13V | 17nC @ 10V | 30ns | 5.3 ns | 20V | 60A | 22A Ta | 25V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600P6 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Tape & Reel (TR) | 2011 | CoolMOS™ P6 | no | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 557pF @ 100V | 12nC @ 10V | 7.3A | 7.3A Tc | 600V | 18A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R1K4C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | EAR99 | 10.36mm | RoHS Compliant | Lead Free | 3 | TO-220-3 | 15.95mm | 4.57mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | Single | 8 ns | 600V | 28.4W Tc | 3.2A | 40 ns | N-Channel | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 200pF @ 100V | 1.1nC @ 10V | 30V | 650V | 3.2A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC046N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Cut Tape (CT) | 2005 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 100V | 156W Tc | 17A | SWITCHING | 0.0046Ohm | SILICON | N-Channel | 4.6m Ω @ 50A, 10V | 3.5V @ 120μA | 4500pF @ 50V | 63nC @ 10V | 14ns | 20V | 100V | 17A Ta 100A Tc | 400A | 350 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7434-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 245W | 23 ns | 3V | 245W Tc | 240A | 107 ns | N-Channel | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 10250pF @ 25V | 315nC @ 10V | 125ns | 85 ns | 20V | 240A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8228TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 4.2mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 11 ns | 1.8V | 2.8W Ta 34W Tc | 19A | SWITCHING | 25V | 13 ns | SILICON | N-Channel | 5.2m Ω @ 20A, 10V | 2.35V @ 25μA | 1667pF @ 10V | 18nC @ 10V | 22ns | 6.2 ns | 20V | 65A | 19A Ta | 25V | 260A | 50 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8235TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 6.2mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7.9 ns | 1.8V | 3W Ta 30W Tc | 16A | SWITCHING | 7.5 ns | SILICON | N-Channel | 7.7m Ω @ 20A, 10V | 2.35V @ 25μA | 1040pF @ 10V | 12nC @ 4.5V | 16ns | 5.2 ns | 20V | 25V | 50A | 16A Ta | 240A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7530-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2008 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 375W | 24 ns | 3.7V | 375W Tc | 240A | 168 ns | N-Channel | 1.4m Ω @ 100A, 10V | 3.7V @ 250μA | 12960pF @ 25V | 354nC @ 10V | 102ns | 79 ns | 3.7V | 240A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7530PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W | 52 ns | 3.7V | 375W Tc | 195A | SWITCHING | 0.002Ohm | 172 ns | SILICON | N-Channel | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 13703pF @ 25V | 411nC @ 10V | 141ns | 104 ns | 3.7V | 60V | 195A Tc | 760A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7534-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 290W | 140 ns | 290W Tc | 240A | SWITCHING | 195 ns | SILICON | N-Channel | 1.95m Ω @ 100A, 10V | 3.7V @ 250μA | 9990pF @ 25V | 300nC @ 10V | 120ns | 86 ns | 20V | 60V | 240A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7537PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Single | 230W | 15 ns | 3.7V | 230W Tc | 173A | 82 ns | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 173A Tc | 60V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2005 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab) | 4.83mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 375W | 28 ns | 375W Tc | 240A | 161 ns | N-Channel | 0.75m Ω @ 100A, 10V | 3.9V @ 250μA | 13975pF @ 25V | 460nC @ 10V | 79ns | 93 ns | 20V | 240A Tc | 40V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7430PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 1 | FET General Purpose Power | Single | 375W | 32 ns | 3.9V | 375W Tc | 195A | 160 ns | N-Channel | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 14240pF @ 25V | 460nC @ 10V | 105ns | 100 ns | 20V | 195A Tc | 40V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7936TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 5.2324mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.1684mm | 6.1468mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | Single | 3.1W | 17 ns | 3.1W Ta | 54A | 19 ns | N-Channel | 4.8m Ω @ 20A, 10V | 2.35V @ 50μA | 2360pF @ 15V | 26nC @ 4.5V | 12ns | 7 ns | 20V | 30V | 76A | 20A Ta 54A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7546PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2013 | StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 99W | 8.1 ns | 99W Tc | 56A | 36 ns | N-Channel | 7.9m Ω @ 43A, 10V | 3.7V @ 100μA | 3020pF @ 25V | 87nC @ 10V | 28ns | 20 ns | 20V | 56A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7746PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.39mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 7.9 ns | 3.7V | 99W Tc | 56A | 34 ns | N-Channel | 11.2m Ω @ 35A, 10V | 3.7V @ 100μA | 3107pF @ 25V | 89nC @ 10V | 30ns | 21 ns | 20V | 56A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3315S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.8W | 9.6 ns | 2V | 3.8W Ta 94W Tc | 21A | 49 ns | N-Channel | 82m Ω @ 12A, 10V | 4V @ 250μA | 1300pF @ 25V | 95nC @ 10V | 32ns | 38 ns | 20V | 150V | 21A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2903ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 231W | 24 ns | 231W Tc | 160A | SWITCHING | 0.0024Ohm | 48 ns | SILICON | N-Channel | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 6320pF @ 25V | 240nC @ 10V | 100ns | 37 ns | 20V | 30V | 2 V | 160A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3415 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 12 ns | 2V | 200W Tc | 43A | SWITCHING | 0.042Ohm | 71 ns | SILICON | N-Channel | 42m Ω @ 22A, 10V | 4V @ 250μA | 2400pF @ 25V | 200nC @ 10V | 55ns | 69 ns | 20V | 150V | 2 V | 43A Tc | 590 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3006-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 375W | 14 ns | 2V | 375W Tc | 240A | SWITCHING | 118 ns | SILICON | N-Channel | 2.1m Ω @ 168A, 10V | 4V @ 250μA | 8850pF @ 50V | 300nC @ 10V | 61ns | 69 ns | 20V | 60V | 240A Tc | 303 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7207Q | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2003 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | RoHS Compliant | AVALANCHE RATED, HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | YES | R-PDSO-G8 | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.06Ohm | 20V | SILICON | P-Channel | 60m Ω @ 5.4A, 4.5V | 1.6V @ 250μA | 780pF @ 15V | 22nC @ 4.5V | 5.4A | 5.4A Ta | 20V | 43A | 140 mJ | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2903ZL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.67mm | RoHS Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 231W | 24 ns | 2V | 231W Tc | 160A | SWITCHING | 0.0024Ohm | 48 ns | SILICON | N-Channel | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 6320pF @ 25V | 240nC @ 10V | 100ns | 37 ns | 20V | 30V | 2 V | 160A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1404S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 17 ns | 2V | 3.8W Ta 200W Tc | 75A | SWITCHING | 0.004Ohm | 72 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 4V @ 250μA | 7360pF @ 25V | 200nC @ 10V | 140ns | 26 ns | 20V | 40V | 2 V | 75A Tc | 650A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR2407 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 16 ns | 2V | 110W Tc | 42A | SWITCHING | 0.026Ohm | 65 ns | SILICON | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 90ns | 66 ns | 20V | 75V | 42A Tc | 10V | ±20V |