English

All Products

View All >>

Infineon Technologies(12661)

Reset
Apply
    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Forward Current Forward Voltage Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFR9024NPBF IRFR9024NPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 11A 11A Tc 55V 44A 62 mJ 10V ±20V
    IRLL3303PBF IRLL3303PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 10 Weeks Tube 1999 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1W Ta N-Channel 31m Ω @ 4.6A, 10V 1V @ 250μA 840pF @ 25V 50nC @ 10V 4.6A Ta 30V 4.5V 10V ±16V
    IRLR3103PBF IRLR3103PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 55A 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 19mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 69W 9 ns 107W Tc 78 ns 55A SWITCHING 20 ns SILICON N-Channel 19m Ω @ 33A, 10V 1V @ 250μA 1600pF @ 25V 50nC @ 4.5V 210ns 54 ns 16V 30V 1 V 20A 55A Tc 220A 240 mJ 4.5V 10V ±16V
    SI4435DYPBF SI4435DYPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.02Ohm 30V SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 8A 8A Tc 30V 50A 4.5V 10V ±20V
    IRLR2703PBF IRLR2703PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free 23A No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 45mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 38W 8.5 ns 1V 45W Tc 97 ns 23A SWITCHING 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 30V 1 V 23A Tc 96A 77 mJ 4V 10V ±16V
    IRLL014NPBF IRLL014NPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED, FAST SWITCHING TO-261-4, TO-261AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.14Ohm 55V SILICON N-Channel 140m Ω @ 2A, 10V 2V @ 250μA 230pF @ 25V 14nC @ 10V 2.8A 2A Ta 55V 16A 32 mJ 4V 10V ±16V
    IRF7807D1PBF IRF7807D1PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2004 FETKY™ Obsolete 1 (Unlimited) SMD/SMT EAR99 4.9784mm RoHS Compliant Lead Free 8.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 25MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 3.5A 500mV Single 2.5W 1V 2.5W Ta 8.3A N-Channel 25m Ω @ 7A, 4.5V 1V @ 250μA 17nC @ 5V 12V 30V 30V Schottky Diode (Isolated) 1 V 8.3A Ta 4.5V ±12V
    IRLR7821PBF IRLR7821PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 6.7056mm ROHS3 Compliant Lead Free 65A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 10MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 75W 11 ns 1V 75W Tc 65A 10 ns N-Channel 10m Ω @ 15A, 10V 1V @ 250μA 1030pF @ 15V 14nC @ 4.5V 4.2ns 3.2 ns 20V 30V 30V 1 V 65A Tc 4.5V 10V ±20V
    AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 18 ns 200W Tc 160A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 160A Tc 480 mJ 10V ±20V
    AUIRFS8407 AUIRFS8407 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Surface Mount Tube 2011 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) IRFS8407 1 FET General Purpose Power Single 230W 19 ns 3V 230W Tc 195A 78 ns N-Channel 1.8m Ω @ 100A, 10V 4V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 40V 3 V 195A Tc 10V ±20V
    IPP65R190C6XKSA1 IPP65R190C6XKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.36mm ROHS3 Compliant Lead Free 3 TO-220-3 15.95mm 4.57mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB Halogen Free Single 13 ns 650V 151W Tc 20.2A SWITCHING 0.19Ohm 133 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 3.5V @ 730μA 1620pF @ 100V 73nC @ 10V 12ns 10 ns 20V 20.2A Tc 66A 485 mJ 10V ±20V
    SPA11N60CFDXKSA1 SPA11N60CFDXKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 33W Tc 0.44Ohm 600V SILICON N-Channel 440m Ω @ 7A, 10V 5V @ 1.9mA 1200pF @ 25V 64nC @ 10V 11A 11A Tc 600V 28A 340 mJ 10V ±20V
    IRFS4321TRL7PP IRFS4321TRL7PP Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G6 1 FET General Purpose Power 1 DRAIN Single 18 ns 5V 350W Tc 86A SWITCHING 25 ns SILICON N-Channel 14.7m Ω @ 34A, 10V 5V @ 250μA 4460pF @ 50V 110nC @ 10V 60ns 35 ns 30V 86A Tc 150V 343A 10V ±30V
    AUIRF1404 AUIRF1404 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 333W 17 ns 2V 333W Tc 160A SWITCHING 0.004Ohm 46 ns SILICON N-Channel 4m Ω @ 121A, 10V 4V @ 250μA 5669pF @ 25V 196nC @ 10V 190ns 33 ns 20V 40V 2 V 160A Tc 808A 620 mJ 10V ±20V
    BTS244ZE3062AATMA2 BTS244ZE3062AATMA2 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2003 TEMPFET® Active 1 (Unlimited) 175°C -40°C ROHS3 Compliant Contains Lead Tin 35A No 5 TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Surface Mount 1.59999g -40°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Halogen Free Single 170W 15 ns 55V 13mOhm PG-TO263-5-2 170W Tc 35A 40 ns N-Channel 13mOhm @ 19A, 10V 2V @ 130μA 2660pF @ 25V 130nC @ 10V 70ns 25 ns 20V 55V Temperature Sensing Diode 35A Tc 55V 2.66nF 4.5V 10V ±20V 13 mΩ
    IPB024N08N5ATMA1 IPB024N08N5ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 22 ns 80V 214W Tc 120A SWITCHING 0.0024Ohm 46 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 3.8V @ 154μA 8970pF @ 40V 123nC @ 10V 14ns 15 ns 20V 120A Tc 480A 374 mJ 6V 10V ±20V
    AUIRF1405ZS-7TRL AUIRF1405ZS-7TRL Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 230W Tc N-Channel 4.9m Ω @ 88A, 10V 4V @ 150μA 5360pF @ 25V 230nC @ 10V 120A Tc 55V 10V ±20V
    IRFSL3107PBF IRFSL3107PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Through Hole Tube 2005 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W 19 ns 370W Tc 230A SWITCHING 99 ns SILICON N-Channel 3m Ω @ 140A, 10V 4V @ 250μA 9370pF @ 50V 240nC @ 10V 110ns 100 ns 20V 75V 195A Tc 900A 10V ±20V
    IPP80N06S2H5AKSA2 IPP80N06S2H5AKSA2 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 10mm ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 TO-220AB Halogen Free Single 300W 23 ns 55V 300W Tc 80A 0.0055Ohm 48 ns SILICON N-Channel 5.5m Ω @ 80A, 10V 4V @ 230μA 4400pF @ 25V 155nC @ 10V 23ns 22 ns 20V 55V 80A Tc 700 mJ 10V ±20V
    IPP039N10N5AKSA1 IPP039N10N5AKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 13 Weeks Tube 2013 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 188W Tc SWITCHING 0.0039Ohm 100V SILICON N-Channel 3.9m Ω @ 50A, 10V 3.8V @ 125μA 7000pF @ 50V 95nC @ 10V 100A 100A Tc 100V 400A 196 mJ 6V 10V ±20V
    IPI80N06S2L05AKSA2 IPI80N06S2L05AKSA2 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE 19 ns 55V 300W Tc 80A SWITCHING 0.006Ohm 67 ns SILICON N-Channel 4.8m Ω @ 80A, 10V 2V @ 250μA 5700pF @ 25V 230nC @ 10V 93ns 90 ns 20V 80A Tc 800 mJ 10V ±20V
    IRFZ44ZSPBF IRFZ44ZSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 51A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 13.9mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 80W 14 ns 4V 80W Tc 35 ns 51A 33 ns N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 55V 4 V 51A Tc 10V ±20V
    IRL3714ZSPBF IRL3714ZSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2003 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free 36A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.699mm 9.65mm 16mOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) 1 Single 35W 6 ns 2.1V 16mOhm D2PAK 35W Tc 12 ns 36A 10 ns N-Channel 16mOhm @ 15A, 10V 2.55V @ 250μA 550pF @ 10V 7.2nC @ 4.5V 13ns 5 ns 20V 20V 20V 2.1 V 36A Tc 20V 550pF 4.5V 10V ±20V 16 mΩ
    IRF3711PBF IRF3711PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 10.5156mm RoHS Compliant Lead Free 110A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 6MOhm Through Hole -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 120W 12 ns 3V 3.1W Ta 120W Tc 110A SWITCHING 17 ns SILICON N-Channel 6m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 220ns 12 ns 20V 20V 20V 3 V 110A Tc 440A 460 mJ 4.5V 10V ±20V
    IRFZ44ESPBF IRFZ44ESPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc SWITCHING 0.023Ohm 60V SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 48A 48A Tc 60V 192A 220 mJ 10V ±20V
    IRLZ34NSPBF IRLZ34NSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free 30A 3 LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 60mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 68W 8.9 ns 2V 76 ns 3.8W Ta 68W Tc 30A SWITCHING 21 ns SILICON N-Channel 35m Ω @ 16A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 100ns 29 ns 16V 55V 55V 2 V 30A Tc 4V 10V ±16V
    IRL3705ZSPBF IRL3705ZSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 86A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 3V 130W Tc 24 ns 75A SWITCHING 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 55V 3 V 75A Tc 4.5V 10V ±16V
    IRF540NSPBF IRF540NSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 130W Tc SWITCHING 0.044Ohm 100V SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 33A 33A Tc 100V 110A 185 mJ 10V ±20V
    IRF1010EZSPBF IRF1010EZSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 175°C -55°C 10.668mm ROHS3 Compliant Lead Free 75A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8.5MOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) 1 Single 140W 19 ns 4V 8.5mOhm D2PAK 140W Tc 75A 38 ns N-Channel 8.5mOhm @ 51A, 10V 4V @ 100μA 2810pF @ 25V 86nC @ 10V 90ns 54 ns 20V 60V 60V 4 V 75A Tc 60V 2.81nF 10V ±20V 8.5 mΩ
    IRF630NSPBF IRF630NSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free Tin 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 300mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 82W 7.9 ns 4V 82W Tc 176 ns 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 4 V 9.3A Tc 94 mJ 10V ±20V